TRANSISTOR DICE Search Results

mil 43

Abstract: process 65 die process information process 88
Contextual Info: Section 6 Bipolar Transistor Dice Process 03 . 6-4 Process 05 . 6-4

TRANSISTOR zo 109 ma

Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
Contextual Info: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C

1.27 GHz transistor

Abstract: transistor j 127 B15V180
Contextual Info: BIPOLARICS, INC. Part Number B15V180 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V180 is a high performance silicon bipolar transistor intended for medium power linear and Class C

PHOTO TRANSISTOR 940nm

Abstract: PHOTO TRANSISTOR "photo transistor" TN2469TK electrooptical transistor
Contextual Info: PHOTO TRANSISTOR 光 電 晶 體 302 Photo Transistor Series Part Number: TN2469TK Package outlines NOTES: 1. All dimensions are in millimeters inches ; 2. Tolerances are ±0.2mm (0.008inch) unless otherwise noted. ITEM Resin (mold) Bonding wire MATERIALS

OST-9N15

Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
Contextual Info: OST-9N15 PHOTO TRANSISTOR • General Description The OST-9N15 is high sensitivity NPN silicon photo-transistor mounted in a SMD plastic package. ■ Features ˙Compact ˙Wide angular response ˙Low cost ˙Meet RoHS ■ Applications ˙Optical counters ˙Optical detectors

MAT01AH

Contextual Info: Matched Monolithic Dual Transistor MAT-01 ANALOG DEVICES □ 1.0 SCOPE This specification covers the detail requirements for a dual matched transistor. It is highly recommended that this data sheet be used as a baseline for new military or aerospace spec control drawings.

C 3311 transistor

Abstract: BRF4801 c 3198 transistor 136.21 IC 7585 midium power uhf transistor BRF480 BRF4801J Silicon Bipolar Transistor 35 MICRO-X BRF48023
Contextual Info: BIPOLARICS, INC. Part Number BRF480 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' BRF480 is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

2N2060M

Contextual Info: 2N2060M w w w. c e n t r a l s e m i . c o m SILICON DUAL NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

2N2918

Contextual Info: 2N2918 DUAL SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2918 is a Dual Silicon NPN Transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

Contextual Info: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

BC307A

Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
Contextual Info: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C

2N2918

Contextual Info: Datasheet rpntrni M ^ TM 2N2918 Sem iconductor Corp. NPN SILICON DUAL TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-78 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2918 is a silicon NPN dual transistor utilizing two individual chips mounted

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5051 Advance Information The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . sp ecifica lly desig n ed fo r high p o w e r vis io n or sound TV a m p lifie rs o p e ra tin g Class

MAT03

Abstract: MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH
Contextual Info: ► A N ALO G D E V IC E S Low Noise, Matched Dual PNP Transistor MAT03 FEA T U R ES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/VHz <§> 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain M atching: 3% max

TPV8100B

Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TPV8100B Advance Information The RF Line UHF Linear Power Transistor 100W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . d e sign e d for output sta ge s in Band IV & V T V transmitter am plifiers. Internal m atch­

Contextual Info: ADVANCE INFORMATION All information in this data sheet is preliminary J ¥ U iy L \J V i and subject to change. 11/96 3V, 1W RF Power Transistors for 900MHz Applications The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a bias­

transistor B 1184

Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 urn Die topology Page 1.500 0.600 SIPC08P20 SIPC08P10 250 250 - 50 0.030 0.035 0.055 0.055 0.070 0.070 0.100 0.100 SIPC20AN05 SIPC20AN05L

airtronic capacitor

Abstract: airtronic air-tronic 470-860 mhz Power amplifier w xg transistor 470-860 mhz Power amplifier 5 w linear amplifier 470-860
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Pow er Transistor Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.

Contextual Info: fc>5E D □aitano o o m s s t OSS Matched Monolithic Dual Transistor MAT-01 A N A LO G D E V IC E S ANALOG DEVICES INC 1.0 ANA SCO PE This specification covers the detail requirements for a dual matched transistor. It is highly recommended that this data sheet be used as a baseline for new military or

2N2060M

Contextual Info: Datasheet 2N2060M w g h C h C i i Semiconductor Corp. NPN SILICON DUAL TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED EC TO-78 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2060M is a silicon NPN dual transistor utilizing two individual chips mounted

TPV597

Contextual Info: , Dnc. ^s.mi- lonciuct oi The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.

470-860 mhz Power amplifier w

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.