TRANSISTOR DG 44 Search Results
TRANSISTOR DG 44 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR DG 44 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C7021
Abstract: PT600T C7035
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DG-953054 44tl/ PT60C C7021 PT600T C7035 | |
F461
Abstract: transistor f461 I F461 ax28
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12min F461 transistor f461 I F461 ax28 | |
MTW8N50E
Abstract: MOTOROLA N-Channel MOSFET motorola power FET
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Contextual Info: Part Number: Integra IB0912L70 TECHNOLOGIES, INC. L-Band JTIDS 70W Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912L70 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under 444x 7us on, |
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IB0912L70 IB0912L70 IB0912L70-REV-NC-DS-REV-B | |
bc577
Abstract: AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621
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OPA660 bc577 AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621 | |
DG441CJContextual Info: 19- 4611 ; R e v 1, 4/94 y y iy ix iv M Im proved, Quad, SPST Analog S w itches _ N e w Features ♦ Plug-In Upgrades for Industry-Standard DG441/DG442 ♦ Improved roS ON Match Between Channels (40 max) The D G 441/D G 442 are quad, sin g le-pole/single-throw |
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DG441/DG442 441/D DG441 DG442 250ns DG441/DG442 MIL-STD-883B. S67hb51 DG441CJ | |
bc577
Abstract: BC577 transistor AGC OPA660 TRANSISTOR BC577 OPA660 ca3080 agc 2N5460 simulation model operational amplifier discrete schematic Transistor DG 44 1N4148
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OPA660 bc577 BC577 transistor AGC OPA660 TRANSISTOR BC577 OPA660 ca3080 agc 2N5460 simulation model operational amplifier discrete schematic Transistor DG 44 1N4148 | |
CCD47-20
Abstract: CCD4720 S11071 ccd sensor back illuminated
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CCD47-20 CCD4720 S11071 ccd sensor back illuminated | |
CCD4720
Abstract: CCD47-20
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CCD47-20 CCD4720 | |
e2v ccd
Abstract: CCD47-20 CCD4720
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CCD47 e2v ccd CCD47-20 CCD4720 | |
e2v ccd
Abstract: CCD47-20 7133A 8C740 CCD4720 scientific imaging technologies A1A-CCD47-20 ccd sensor back illuminated CCD-Sensor for e2v CCD47
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CCD47-20 CCD47-20 sp243 CCD47-20, e2v ccd 7133A 8C740 CCD4720 scientific imaging technologies A1A-CCD47-20 ccd sensor back illuminated CCD-Sensor for e2v CCD47 | |
CCD4720
Abstract: CCD47-20
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CCD47-20 CCD4720 | |
ccd47-10
Abstract: Scientific Imaging Technologies
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CCD47-10 Scientific Imaging Technologies | |
8C740
Abstract: CCD47-10
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CCD47-10 8C740 | |
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CCD47-10
Abstract: e2v CCD57-10
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CCD47-10 e2v CCD57-10 | |
Contextual Info: ANALOG DEVICES FEATURES Fault and Overvoltage Protection up to ± 4 0 V Signal Paths Open Circuit w ith Power Off Signal Path Resistance of R0 n w ith Power On 44 V Supply M axim um Ratings Low On Resistance A DG 466/ADG 467 60 i l typ 1 nA M ax Path Current Leakage @ +25°C |
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466/ADG ADG466/ADG467 ADG466 ADG467 20-Lead RS-20) | |
8097 architecture
Abstract: ccd47-10 e2v CCD57-10 CCD57-10
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CCD57-10 8097 architecture ccd47-10 e2v CCD57-10 | |
CCD55-30
Abstract: 7858a equivalent 6612a Scientific Imaging Technologies CCD05
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CCD55-30 CCD55 7858a equivalent 6612a Scientific Imaging Technologies CCD05 | |
6363A
Abstract: IC TDA1083 TDA1083 TOKO CERAMIC FILTER 455 STETTNER GmbH AM IF amplifier STETTNER capacitor
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TDA1083 TDA1083 D-74025 03-Dec-98 6363A IC TDA1083 TOKO CERAMIC FILTER 455 STETTNER GmbH AM IF amplifier STETTNER capacitor | |
CCD55-30
Abstract: CCD05-30 7133B
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CCD55-30 CCD55 CCD05-30 7133B | |
pbx schematic
Abstract: 022J
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00MT3DS HC-5504ALC pbx schematic 022J | |
48c zener diodeContextual Info: Philips Semiconductors Product specification PowerMOS transistor Clamped logic level FET GENERAL DESCRIPTION BUK573-48C QUICK REFERENCE DATA Protected N-channel enhancement mode logic level field-eftect power transistor in a plastic full-pack envelope. The device is intended for use in |
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BUK573-48C PINNING-SOT186A 48c zener diode | |
transistor manual substitution FREE DOWNLOAD
Abstract: transistor manual substitution TRANSISTOR SUBSTITUTION DATA BOOK npn transistors, video amplifiers TK15402M TK15452V TRANSISTOR SUBSTITUTION GC3-H035
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TK15452V GC3-H035 TSSOP-14 TK15452V TK15452V, transistor manual substitution FREE DOWNLOAD transistor manual substitution TRANSISTOR SUBSTITUTION DATA BOOK npn transistors, video amplifiers TK15402M TRANSISTOR SUBSTITUTION GC3-H035 | |
transistor manual substitution
Abstract: transistor manual substitution FREE DOWNLOAD transistors cross reference TK15450L mark ct2 H036 TRANSISTOR SUBSTITUTION DATA BOOK TK15420M TK15450M TRANSISTOR SUBSTITUTION
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TK15450M/L GC3-H036 TK15450M/L TK15450M/L, OT23L//www transistor manual substitution transistor manual substitution FREE DOWNLOAD transistors cross reference TK15450L mark ct2 H036 TRANSISTOR SUBSTITUTION DATA BOOK TK15420M TK15450M TRANSISTOR SUBSTITUTION |