TRANSISTOR DARLINGTON NPN Search Results

motorola transistor ignition

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR

1N4001 transistor free

Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

BC337 rbe

Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

2SC4351

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for

Contextual Info: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

bu806

Abstract: bu807 "Darlington Transistor"
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CTR VIDEO DISPLAYS BUILT-IN SPEED -U P Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

bu806 equivalent

Abstract: bu806
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

TIP122

Abstract: tip127 tip126 tip121 TIP120 TIP125 TIP120-TIP127 TRANSISTOR tip122 PNP POWER TRANSISTOR TIP122 tip122 transistor
Contextual Info: TIP120-TIP127 TO-220 Darlington Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features — TIP120,121,122 — TIP125,126,127 Darlington TRANSISTOR PNP Medium Power Complementary silicon transistors — Darlington TRANSISTOR (NPN) Dimensions in inches and (millimeters)

bu806 equivalent

Abstract: transistor s07 using of damper in Horizontal Output Transistor bu807 equivalent BU806 "Darlington Transistor" damper diode darlington npn BU806..807 transistor bu806 BU807
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED -UP Diode Between Base and Em itter ABSOLUTE MAXIMUM RATINGS

BU806..807

Abstract: BU806 BU807
Contextual Info: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110°° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

bu806

Abstract: c25 diode to220 "Darlington Transistor" transistor Vbe 1 NPN Transistor 5A 400V BU807 transistor bu806 Darlington NPN Silicon Diode bu806 equivalent 330 transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CTR VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS

MJE802

Contextual Info: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,

2SC4811

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.

d1560

Abstract: 2SC4810 darlington transistor for audio power application
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4810 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4810 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS Ta=25°C

bu323a

Abstract: motorola transistor ignition
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Ttansistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN

Contextual Info: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration

uln2003r

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY  DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington transistor arrays. Each consists of seven NPN darlington pairs

Contextual Info: 2N6294 NPN Darlington Transistor 4.94 Transistors Darlington Transistors NPN Americ. Page 1 of 1 Enter Your Part # Home Part Number: 2N6294 Online Store 2N6294 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits

2SD1843

Abstract: diode dumper
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to

2N998

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 2N998 NPN Darlington Transistor 9.00 Transistors Darlington Transistors NPN America. Page 1 of 1 Enter Your Part # Home Part Number: 2N998 Online Store 2N998 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits

2SD1592

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR DARLINGTON CONNECTION FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Low collector saturation

2SD418

Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,

2N6388

Contextual Info: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration