TRANSISTOR D54 Search Results

KD421K10

Contextual Info: KD421K10_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D s r H n Q tO il Transistor Module 100 Amperes/1000 Volts O U T L I N E DRAW ING Description: The Powerex Dual Darlington Transistor Modules are high power

transistor D55

Contextual Info: m m oEK Powerex, Inc., 200 Hfflis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD421K10 Dual Darlington Transistor Module 100 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

transistor d412

Contextual Info: XL-25 with Li-98 Ceramic Heat Spreader with Thermal Tape XL-25 Features Large contact area Low weight High breakdown voltage Excellent heat spreader Custom shapes possible Applications LED / Notebook PC / M/B / Power Transistor / Power Module / CPU / Chip IC

M61511FP

Abstract: 80P6N 2427D N675 D44 8PIN
Contextual Info: MITSUBISHI SOUND PROCESSORS M61511FP AUDIO SIGNAL PROCESSOR 6ch Electric Volume with 10 Input Selector APPLICATION AV Amp, Receiver, Mini Compo etc. FEATURE • 6ch Independent Electric Volume with High Voltage Transistor 97 Step ; 0~-95dB/1dB Step, -∞ , Maximum Input Voltage 4Vrms

2SD780

Abstract: 7802S
Contextual Info: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe­ in m illim eters 2 .8 + 0 2

Contextual Info: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)

TRANSISTOR D54

Abstract: d54 marking TRANSISTOR B54
Contextual Info: NPN medium power transistor Die no. D-54 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm MPT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 I1.5( — TY ‘ 0.1 collector-to-emitter breakdown voltage, BVCE0 = 80 V (min) at

KC224575

Abstract: KT224515 KT224510 KC224503 pj 1339 KC-224575 KC324510 KR224505 ke721k03 KR224503
Contextual Info: m N E R E X Powerex, Inc., 200 Hillis St reet, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 42t Avenue Ci Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Powerex Darlington Transistor Modules are in wide use in inverter and power supply circuits. The last

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SD780/2SD780A TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9

transistor b54

Abstract: b54 marking
Contextual Info: PNP medium power transistor Die no. B-54 Dimensions Units : mm These are epitaxial planar PNP silicon transistors. MPT3 Features • • • available in a MPT3 (MPT, SOT-89) package, see page 300 1.6 ± 0 .1 -m collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at

Contextual Info: Die no. D-54 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm M PT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 4 . 5 —o ) I l .6 ± 0 .l 1 .5 -0 .1 ~ ,m collector-to-emitter breakdown

2SD780

Abstract: d53 pnp transistor marking D53 MARKING D53 5L 2SD780A 1264B J22686
Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S D 7 8 0 .2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD780, 2SD780A are designed for use in small type equipments espe­ in millimeters

transistor c37

Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
Contextual Info: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22

55B5

Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Contextual Info: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4     3 ? >F5BD5BC Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#

IPB025

Abstract: IPB025N08N3 G
Contextual Info: IPB025N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H 0 J Q ' 3 81>>5< >? B=1<<5F5< R 9H"[Z#$YMd *&- Y" Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &  I9 *( 6 @B5F9? EC 5>79>55B9 >7 C1=@<5 3 ? 45 ?E7(*8C(0C Q. 5BI <? G ? > B5C9CD

NEC D780

Abstract: 2SD78 d780 nec 2sd780 D780A 780a
Contextual Info: SILICON TRANSISTORS 2 S D 7 8 0 ,2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTIO N P A C K A G E D IM EN SIO N S The 2SD780, 2S D 780 A are designed fo r use in small ty p e equipm ents espe- in m illim eters

5413C

Abstract: d54 marking 2SB736 2SB736A 2SD780 2SD780A 1h3-e
Contextual Info: NEC i j Í ? r / \ f 7 S ilico n T ra n sisto rs 2 S D 7 8 0 ,7 8 0 A N P N x Id * b 7 .9 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier í# f i / FEATURES P ACK AG E DIMENSIONS O jg / h ^ ^ - C * W U n it - mm) 7"'J -y KICffl t L T t l t t .

diac d83

Abstract: TELEVISION EHT TRANSFORMERS Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips IC HEF 4538 TDA3654 equivalent at2090/01 D63 diac varistor 10E 431 automatic voltage stabilizer circuit diagram lm324
Contextual Info: Televisions and Monitors Power Semiconductor Applications Philips Semiconductors CHAPTER 4 Televisions and Monitors 4.1 Power Devices in TV Applications including selection guides 4.2 Deflection Circuit Examples 4.3 SMPS Circuit Examples 4.4 Monitor Deflection and SMPS Example

M/8323

Contextual Info: Contents Features. Applications. Block Diagram. Selection Guide.

n5822

Abstract: variable resistor 727M 5V712 3055el tp3055 TP3055EL TP3055E 941ODY MAX770-MAX773 MAX773
Contextual Info: y k iy jx iy i/i 5 V / 1 2 V / 1 5 V or A d j u s t a b l e , Hi gh-Effici ency, Low IQ, St ep- Up DC- DC Controll ers T hese ICs use tiny external co m p o n e n ts. T he ir high sw itch in g fre q u e n cie s up to 300kH z a llo w surfacem ount m agnetics of 5mm height and 9mm diameter.

FX3U-48M

Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
Contextual Info: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)

transistor 2SA

Abstract: SA1362 LB Nichicon S-8323C A720 transistor 2sd 5200
Contextual Info: Contents Applications. 1 Block Diagram. 1 Selection

BUF600X1

Abstract: ISO120X BUF634X MPC104X1 ISO130X ACF2101M MPC100X1 opa129 pspice model OPT101 equivalent OPA2541
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132