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    TRANSISTOR D54 Search Results

    TRANSISTOR D54 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D54 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor d412

    Abstract: No abstract text available
    Text: XL-25 with Li-98 Ceramic Heat Spreader with Thermal Tape XL-25 Features Large contact area Low weight High breakdown voltage Excellent heat spreader Custom shapes possible Applications LED / Notebook PC / M/B / Power Transistor / Power Module / CPU / Chip IC


    Original     		XL-25 Li-98 Li98C 20x20xt2 XL-25 transistor d412 PDF

    M61511FP

    Abstract: 80P6N 2427D N675 D44 8PIN
    Text: MITSUBISHI SOUND PROCESSORS M61511FP AUDIO SIGNAL PROCESSOR 6ch Electric Volume with 10 Input Selector APPLICATION AV Amp, Receiver, Mini Compo etc. FEATURE • 6ch Independent Electric Volume with High Voltage Transistor 97 Step ; 0~-95dB/1dB Step, -∞ , Maximum Input Voltage 4Vrms


    Original     		M61511FP -95dB/1dB 0/6/12dB) 80P6N M61511FP 80P6N 2427D N675 D44 8PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SD780/2SD780A TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9


    Original     		OT-23-3L OT-23-3L 2SD780/2SD780A 2SD780 2SD780A 300mA 300mA, PDF

    transistor D55

    Abstract: 2SD780 d54 marking 2SD780A marking D53 2SD78 TRANSISTOR D54 D51 marking
    Text: 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.3 A Collector-base voltage 60 V 2SD780 V(BR)CBO: 80


    Original     		2SD780/2SD780A OT-23-3L 2SD780 2SD780A 300mA 300mA, transistor D55 2SD780 d54 marking 2SD780A marking D53 2SD78 TRANSISTOR D54 D51 marking PDF

    55B5

    Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
    Text: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4     3 ? >F5BD5BC Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#


    Original     		IPB036N12N3 65AE5 55B5 IPB036N12N marking eb5 Diode 9H diode 1D marking G9 PDF

    IPB025

    Abstract: IPB025N08N3 G
    Text: IPB025N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H 0 J Q ' 3 81>>5< >? B=1<<5F5< R 9H"[Z#$YMd *&- Y" Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &  I9 *( 6 @B5F9? EC 5>79>55B9 >7 C1=@<5 3 ? 45 ?E7(*8C(0C Q. 5BI <? G ? > B5C9CD


    Original     		IPB025N08N3 IPB025 IPB025N08N3 G PDF

    diac d83

    Abstract: TELEVISION EHT TRANSFORMERS Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips IC HEF 4538 TDA3654 equivalent at2090/01 D63 diac varistor 10E 431 automatic voltage stabilizer circuit diagram lm324
    Text: Televisions and Monitors Power Semiconductor Applications Philips Semiconductors CHAPTER 4 Televisions and Monitors 4.1 Power Devices in TV Applications including selection guides 4.2 Deflection Circuit Examples 4.3 SMPS Circuit Examples 4.4 Monitor Deflection and SMPS Example


    Original     		PDF

    FX3U-48M

    Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
    Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)


    Original     		D-40880 168590-E FX3U-48M FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M PDF

    BUF600X1

    Abstract: ISO120X BUF634X MPC104X1 ISO130X ACF2101M MPC100X1 opa129 pspice model OPT101 equivalent OPA2541
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF

    KD421K10

    Abstract: No abstract text available
    Text: KD421K10_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D s r H n Q tO il Transistor Module 100 Amperes/1000 Volts O U T L I N E DRAW ING Description: The Powerex Dual Darlington Transistor Modules are high power


    OCR Scan     		KD421K10_ Amperes/1000 EIC20- KD421K10 KD421K10 PDF

    transistor D55

    Abstract: No abstract text available
    Text: m m oEK Powerex, Inc., 200 Hfflis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD421K10 Dual Darlington Transistor Module 100 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature


    OCR Scan     		KD421K10 Amperes/1000 transistor D55 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    2SD780

    Abstract: 7802S
    Text: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe­ in m illim eters 2 .8 + 0 2


    OCR Scan     		2SD780 2SD780A 2S0780, 2SD780A 2SB736, 2SB736A Diss50 --84M 7802S PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)


    OCR Scan     		OT-89) BCX53 I70CP-C0LLECT0R PDF

    KC224575

    Abstract: KT224515 KT224510 KC224503 pj 1339 KC-224575 KC324510 KR224505 ke721k03 KR224503
    Text: m N E R E X Powerex, Inc., 200 Hillis St reet, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 42t Avenue Ci Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Powerex Darlington Transistor Modules are in wide use in inverter and power supply circuits. The last


    OCR Scan     		BP107, KET24505HB KE921205HB KET24575HB KET24510HB KC224575 KT224515 KT224510 KC224503 pj 1339 KC-224575 KC324510 KR224505 ke721k03 KR224503 PDF

    transistor b54

    Abstract: b54 marking
    Text: PNP medium power transistor Die no. B-54 Dimensions Units : mm These are epitaxial planar PNP silicon transistors. MPT3 Features • • • available in a MPT3 (MPT, SOT-89) package, see page 300 1.6 ± 0 .1 -m collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at


    OCR Scan     		OT-89) BCX53 BCX56, 170CP-C0LLECT0R transistor b54 b54 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Die no. D-54 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm M PT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 4 . 5 —o ) I l .6 ± 0 .l 1 .5 -0 .1 ~ ,m collector-to-emitter breakdown


    OCR Scan     		OT-89) BCX56 BCX53, PDF

    2SD780

    Abstract: d53 pnp transistor marking D53 MARKING D53 5L 2SD780A 1264B J22686
    Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S D 7 8 0 .2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD780, 2SD780A are designed for use in small type equipments espe­ in millimeters


    OCR Scan     		2SD780, 2SD780A 2SD780A 2SB736, 2SB736A 2SD780 J22686 --84M d53 pnp transistor marking D53 MARKING D53 5L 1264B PDF

    transistor c37

    Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
    Text: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22


    OCR Scan     		OT-23) OT-323) OT-89) 2N2925 2N3703 2N3704 2N3706 2N3711 2N3860 2N3903 transistor c37 a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11 PDF

    NEC D780

    Abstract: 2SD78 d780 nec 2sd780 D780A 780a
    Text: SILICON TRANSISTORS 2 S D 7 8 0 ,2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTIO N P A C K A G E D IM EN SIO N S The 2SD780, 2S D 780 A are designed fo r use in small ty p e equipm ents espe- in m illim eters


    OCR Scan     		2SD780, 2SD780A 2SB736, B736A NEC D780 2SD78 d780 nec 2sd780 D780A 780a PDF

    5413C

    Abstract: d54 marking 2SB736 2SB736A 2SD780 2SD780A 1h3-e
    Text: NEC i j Í ? r / \ f 7 S ilico n T ra n sisto rs 2 S D 7 8 0 ,7 8 0 A N P N x Id * b 7 .9 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier í# f i / FEATURES P ACK AG E DIMENSIONS O jg / h ^ ^ - C * W U n it - mm) 7"'J -y KICffl t L T t l t t .


    OCR Scan     		2SD780, 2SD780A 2SB736, 2SB736A 2SD780 2SD780A 5413C d54 marking 2SB736 1h3-e PDF

    M/8323

    Abstract: No abstract text available
    Text: Contents Features. Applications. Block Diagram. Selection Guide.


    OCR Scan     		S-8327B30 S-8327B50 CD105 47nFx2) M/8323 PDF

    n5822

    Abstract: variable resistor 727M 5V712 3055el tp3055 TP3055EL TP3055E 941ODY MAX770-MAX773 MAX773
    Text: y k iy jx iy i/i 5 V / 1 2 V / 1 5 V or A d j u s t a b l e , Hi gh-Effici ency, Low IQ, St ep- Up DC- DC Controll ers T hese ICs use tiny external co m p o n e n ts. T he ir high sw itch in g fre q u e n cie s up to 300kH z a llo w surfacem ount m agnetics of 5mm height and 9mm diameter.


    OCR Scan     		MAX770-MAX773 110pA 300kH AX770/M AX771 AX772 MAX773 MAX773 n5822 variable resistor 727M 5V712 3055el tp3055 TP3055EL TP3055E 941ODY PDF

    transistor 2SA

    Abstract: SA1362 LB Nichicon S-8323C A720 transistor 2sd 5200
    Text: Contents Applications. 1 Block Diagram. 1 Selection


    OCR Scan     		S-8327B50 S-8323/8327 transistor 2SA SA1362 LB Nichicon S-8323C A720 transistor 2sd 5200 PDF