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    TRANSISTOR D1415A Search Results

    TRANSISTOR D1415A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    D1415A

    Abstract: transistor D1415A d1415 2SD1415A
    Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1415A D1415A transistor D1415A d1415 2SD1415A

    transistor D1415A

    Abstract: No abstract text available
    Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1415A transistor D1415A

    transistor D1415A

    Abstract: D1415A
    Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1415A 2-10R1A transistor D1415A D1415A

    D1415A

    Abstract: transistor D1415A 2SD1415A d1415
    Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1415A D1415A transistor D1415A 2SD1415A d1415

    D1415A

    Abstract: 2SD1415A
    Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1415A D1415A 2SD1415A