D1316
Abstract: 2SA1744
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is
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2SA1744
2SA1744
D1316
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2SD2165
Abstract: NEC marking b
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and
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2SD2165
2SD2165
NEC marking b
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2SD2165
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and
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2SD2165
2SD2165
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2SD2165
Abstract: nec transistor Transistor NEC 30
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and
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2SD2165
2SD2165
nec transistor
Transistor NEC 30
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA
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d1310
Abstract: 2SK3061 A2087
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3061 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching applications.
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2SK3061
2SK3061
O-220
O-220)
O-220
d1310
A2087
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2SK3061
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching application.
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2SK3061
O-220
O-220
2SK3061
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2SK3062
Abstract: 2SK3062-S 2SK3062-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance
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2SK3062
O-220AB
2SK3062-S
O-262
2SK3062-ZJ
O-263
2SK3062
2SK3062-S
2SK3062-ZJ
MP-25
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2SK3062
Abstract: 2SK3062-S 2SK3062-Z 2SK3062-ZJ MP-25 MP-25Z d13101
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance
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2SK3062
2SK3062
O-220AB
2SK3062-S
O-262
2SK3062-ZJ
O-263
2SK3062-Z
O-220SMD
2SK3062-S
2SK3062-Z
2SK3062-ZJ
MP-25
MP-25Z
d13101
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PA1910
Abstract: PA1910TE SC-95
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent
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PA1910
PA1910
PA1910TE
SC-95
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PA1910
Abstract: PA1910TE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent
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PA1910
PA1910
PA1910TE
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2SB1097
Abstract: 2SD1588 NPN SILICON EPITAXIAL TRANSISTOR
Text: '$7$ 6+ 7 SILICON POWER TRANSISTOR 2SD1588 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm • Mold package that does not require an insulating board or insulation bushing • Large current capacity in small dimension: IC(DC) = 7 A
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2SD1588
2SB1097
2SB1097
2SD1588
NPN SILICON EPITAXIAL TRANSISTOR
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d1308
Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
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2SK2414,
2SK2414-Z
2SK2414
d1308
d1297
2SK2414-Z
C10535E
C10943X
C11531E
MEI-1202
2SK2414Z
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2SK2414
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2414-Z SWITCHING N-CHANNEL POWER MOS FET <R> PACKAGE DIMENSIONS Unit: mm The 2SK2414 is N-Channel MOS Field Effect Transistor designed 1.5 −0.1 5.0 ±0.2 1 2 5.5 ±0.2 • Low On-Resistance 3 1.1 ±0.2 • Low Ciss: Ciss = 860 pF TYP.
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2SK2414,
2414-Z
2SK2414
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NEC 2505
Abstract: 2SK2372 2SK2371 MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2371, 2372 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance 2SK2371: RDS on = 0.25 Ω MAX. (VGS = 13 V, ID = 10 A)
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2SK2371,
2SK2371:
2SK2372:
2SK2371/2372)
NEC 2505
2SK2372
2SK2371
MP-88
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2SK129
Abstract: PC1099CX PC1094 *c1094g 2SK1295 tea 1503 pc1094c1094g TEA-578 TEA-572 2SK1295 NEC
Text: データ・シート MOS形電界効果パワー トランジスタ MOS Field Effect Power Transistor 2SK1295 Ｎチャネル パワーMOS FET スイッチング用 工業用 外 形 図（単位：mm） 2SK1295は，Ｎチャネルエンハンスメント形パワーMOS
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2SK1295
2SK1295MOS
RDSon50
RDSon70
O-220MP-45F
108-0171NEC
46017NEC
54024NEC
2SK129
PC1099CX
PC1094
*c1094g
2SK1295
tea 1503
pc1094c1094g
TEA-578
TEA-572
2SK1295 NEC
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2SK3062
Abstract: 2SK3062-S 2SK3062-Z MP-25 MP-25Z
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3062 N チャネル パワーMOS FET スイッチング用 工業用 2SK3062 は N チャネル縦型パワーMOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途や
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2SK3062
O-262
2SK3062-Z
O-220AB
2SK3062-S
O-220SMD
2SK3062
2SK3062-S
2SK3062-Z
MP-25
MP-25Z
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2SD2165
Abstract: *d2165
Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2165 NPNエピタキシアル形シリコン・トランジスタ 低周波電力増幅，低速度スイッチング用 2SD2165は，hFEが特に高くなるように設計されたシングルのパ
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2SD2165
2SD2165hFE
O-220MP-45F
200IB
D13178JJ3V0DS
M8E02
2SD2165
*d2165
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2SK3061
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3061 N チャネル パワー MOS FET スイッチング用 工業用 2SK3061 は N チャネル縦型パワー MOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途
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2SK3061
O-220
D13100JJ1V0DS00
2SK3061
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2SD2165
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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FX3U-48M
Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)
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D-40880
168590-E
FX3U-48M
FX3U-32M
a6tbxy36
FX3U-64M
FX2N 64mr manual
FX3U-80M
pid temprature controller
FX2N-16EX
JY997D16901
FX3U-128M
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TRANSISTOR F10 10N
Abstract: SS-220 10v 2SJ198 2SK1484
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ198 P-CHANNEL MOS FET FOR SWITCHING The 2SJ198 is a p-channel vertical type MOS FET switching
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2SJ198
2SJ198
TRANSISTOR F10 10N
SS-220 10v
2SK1484
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2SJ198
Abstract: 2SK1484
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ198 P-CHANNEL MOS FET FOR SWITCHING The 2SJ198 is a p-channel vertical type MOS FET switching OUTLINE DIMENSIONS Unit : mm device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low ON-state resistance is
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2SJ198
2SJ198
2SK1484
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transistor d133
Abstract: Decoder BCD 7 seg ttl 7442 transistor 6B 7-seg ANODE COMMON 74155 74LS247 pin diagram of 74LS247 ttl 74191 75491
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL -T T L D130 54/74190, 74LS190 54/74191, 74LS191 D132 54/74155, 54LS/74LS155 54/74156, 54LS/74LS156 D131 9321, 93L21, 54/74S139, 54LS/74LS139 15 14 13 TTTT 12 11 10 9 Vcc = Pin 16 GND = Pin 8 Vcc = Pin 16 GND = Pin 8
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74LS190
74LS191
93L21,
54/74S139,
54LS/74LS139
54LS/74LS155
54LS/74LS156
93L01,
93L34,
54LS/74LS259
transistor d133
Decoder BCD 7 seg
ttl 7442
transistor 6B
7-seg ANODE COMMON
74155
74LS247
pin diagram of 74LS247
ttl 74191
75491
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