TRANSISTOR D1 Search Results
TRANSISTOR D1 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR D1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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to223Contextual Info: 2SD2403Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Features D1 A • This transistor is also available in the TO-223 case with the type designation PZT2403 E E1 • NPN Silicon Epitaxial Planar Transistor for |
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2SD2403Q OT-89 O-223 PZT2403 OT-89 100MHz 01-Jun-2002 to223 | |
AC1501Contextual Info: A42Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. D D1 A E E1 • This transistor is also available in the TO-92 case with the |
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OT-89 MPSA42. OT-89 01-Jun-2002 AC1501 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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DTA143EE 416/SC | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network |
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LDTA124EET1 SC-89 | |
6aa markingContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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DTA114YE 416/SC 6aa marking | |
D1486
Abstract: 2SC4342
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2SC4342 2SC4342 O-126 D1486 | |
D1485
Abstract: 2SA1720
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2SA1720 2SA1720 O-220 D1485 | |
Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance |
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BD239C BD240C. O-220 | |
nec 620
Abstract: 2SD1582 hFE transistor high hfe transistor
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2SD1582 2SD1582 nec 620 hFE transistor high hfe transistor | |
BD239C
Abstract: BD240C JESD97 transistor marking 1a
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BD239C BD240C. O-220 BD239C BD240C JESD97 transistor marking 1a | |
2SA1743
Abstract: C11531E
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2SA1743 2SA1743 C11531E | |
2SD1581Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is |
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2SD1581 2SD1581 | |
2SA1742Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal |
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2SA1742 2SA1742 O-220 O-220) | |
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2SC4550Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is |
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2SC4550 2SC4550 | |
NEC 2sc4552
Abstract: 2SC4552
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2SC4552 2SC4552 NEC 2sc4552 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j | |
D1615
Abstract: transistor ab2 12
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2SD2425 2SD2425 2SB1578 C11531E) D1615 transistor ab2 12 | |
2SD2402
Abstract: transistor 2sD2402 Transistor Marking EY
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2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY | |
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for |
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2SD2403 2SD2403 2SB1572 | |
2SB1453
Abstract: NEC 2SB1453
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2SB1453 2SB1453 NEC 2SB1453 | |
2SB1453
Abstract: NEC 2SB1453
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2SB1453 2SB1453 NEC 2SB1453 | |
D1316
Abstract: 2SA1744
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2SA1744 2SA1744 D1316 | |
2SC4551Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is |
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2SC4551 2SC4551 |