TRANSISTOR D 808 Search Results

TRANSISTOR D 808 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR D 808 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 1 Introduction The MBC13900 is a high performance transistor	Original	MBC13900/D MBC13900 OT-343) MBC13900 SC-70	PDF
GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
LL1608-FH Abstract: MBC13900 MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545 Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1	Original	MBC13900/D MBC13900 OT-343) MBC13900T11 MBC13900NT1 MBC13900 SC-70 LL1608-FH MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545	PDF
0338 transistor Abstract: marking r4 SOT343 Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1	Original	MBC13900/D MBC13900 MBC13900T11 MBC13900NT1 OT-343) OT-343 OT-343 0338 transistor marking r4 SOT343	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1, 05/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1 1	Original	MBC13900/D MBC13900 MBC13900T11 MBC13900NT1 OT-343) OT-343 OT-343	PDF
Untitled Abstract: No abstract text available Text: NHD-5.7-320240WFB-CTXI#-1 TFT Thin-Film-Transistor Color Liquid Crystal Display Module NHD5.7320240WFBCTXI#-1 Newhaven Display D 320xRGBx240 pixels Model Built-in driver + Controller White LED backlight TFT 6:00 view, Wide Temp RoHS Compliant Newhaven Display International, Inc.	Original	7-320240WFB-CTXI 7320240WFBCTXI 320xRGBx240 240hrs 30min 10-55Hz 100pF	PDF
transistor NEC D 822 P Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2 Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters	OCR Scan	2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P	PDF
Untitled Abstract: No abstract text available Text: N AUER PH ILIPS /D ISC R ETE b^E bb53^31 DQ2T4EM ITH I BLW81 D U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.	OCR Scan	BLW81	PDF
BU808 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE 5SE D ^53=131 QOlfibS? 0 • I _J B U 808 y r s i - i t r SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended for use in three-phase AC motor control systems.	OCR Scan	T-33-T5 T-33-75 7Z81799 BU808	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
transistor 808 Abstract: t3n8 transistor BUX 48 BUX44 bux c Text: *BUX44 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS TO R S IL IC IU M N P N , M ESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif recommandé High speed, high curre n t, high po w er transistor Transistor de puissance rapide, fo r t courant	OCR Scan	BUX44 CB-19 connected10' transistor 808 t3n8 transistor BUX 48 BUX44 bux c	PDF
Untitled Abstract: No abstract text available Text: Central CMUT2907A Sem iconductor Corp. SURFACE MOUNT ULTRAmini PNP SILICON TRANSISTOR DESCRIPTION: The C E N T R A L SEM IC O N D U CTO R CM UT2907A type is an P N P silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface	OCR Scan	CMUT2907A UT2907A 150mA, OT-523 OT-523 12-February	PDF
1.4464 Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473 Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S	OCR Scan	2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473	PDF

Untitled Abstract: No abstract text available Text: 3SE D m Ô23fc.320 0 0 1 7 2 3 Ì NPN Silicon Switching Transistor SIEM ENS/ • • • SPCL-, 3 BISIP SMBT 3904 SEM ICO N D S _ High D C current gain: 0.1 to 100 mA Low collector-emltter saturation voltage Complementary type: S M B T 3906 PNP	OCR Scan	Q68000-A4340 Q68000-A4416 SmA10' SMBT3904 001753b T-35-11	PDF
Untitled Abstract: No abstract text available Text: hÿ UMG8N/FMG8A / T ransistors UMG8N FMG8A X 3 . 7 J I / 5 — i — Jl K h'5’ > y ^ 5 I /Dual Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor $ K ' 7 ' f /^/Inverter Driver •f • 1 7, —I t — s. — i — )U \h ;i /D im e n s io n s U n it: mm)	OCR Scan	lS34l*	PDF
mj100bk100 Abstract: transistor su 110 Text: MOTOROLA SC Í X S T R S / R flO F> D E I b3L,7554 007bfl72 H \| O rd er th is data sh e et by MJ100BK100/D MOTOROLA E 3 S E M IC O N D U C T O R TECHNICAL DATA ' 6367254 M OTO RO LA SC <X S T R S / R_F _ 80C 76872 NPN Silicon Power Transistor Module D ' 7 -	OCR Scan	007bfl72 MJ100BK100/D J100B MK145BP, J100BK100 DS3721 mj100bk100 transistor su 110	PDF
MJ150BK100 Abstract: MOTOROLA 4221 4221 motorola transistor Text: 6 3 6 7 2 5 4 MOTOROLA S C MOTOROLA <XSTRS/R F 89D 79972 d 3 3 ^ 3 cT Order this data sheet by MJ150BK100/D Së)b3b7as4 DOTwa SEM ICO N D UCTO R • ■■ m "\ ^ 7 m TECHNICAL DATA NPN Silicon Pow er Transistor M odule Energy M anagem ent Series DUAL TRISTAGE	OCR Scan	MJ150BK100/D MK145BP, MJ150BK100 MJ150BK100 MOTOROLA 4221 4221 motorola transistor	PDF
transistor tt 2222 Abstract: TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322 Text: Philips Sem iconductors [^ 5 3 ^ 3 1 0030115 121 • APX ^ ro d u c ts p e c m Ä BLF543 UHF power MOS transistor b * ìE N AMER P H I L I P S / D I S C R E T E D ' PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability	OCR Scan	bbS3T31 OT171 PINNING-SOT171 BLF543 MCA90E transistor tt 2222 TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322	PDF
BLF543 Abstract: 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips Text: Product specification Philips Semiconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF543 SbE D • 711Dfl2b 50b « P H I N PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability	OCR Scan	BLF543 711Dfl5b OT171 OT171 BLF543 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips	PDF
marking 8fb Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR BC817/BC818 S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter V oltage	OCR Scan	BC817/BC818 BC807/BC BC817 BC818 25product marking 8fb	PDF
Beckman 661 Abstract: 661 Beckman MRF134 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F M O S F E T Line 5.0 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2.0-400 MHz N-CHANNEL MOS BROADBAND RF POWER . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l a m p lifie r a n d o s c illa to r	OCR Scan		PDF
8fc marking code Abstract: TRANSISTOR 8FB 8FC SOT23 AF MARKING CODE B 817 ic 817 ic 817 b pc 817 BC817 BC818 Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage	OCR Scan	BC817/BC818 BC807/BC808 BC817 BC818 OT-23 100mA 300mA 500mA, 8fc marking code TRANSISTOR 8FB 8FC SOT23 AF MARKING CODE B 817 ic 817 ic 817 b pc 817 BC818	PDF
transistor NEC D 587 Abstract: de 535 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 800T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAW INGS	OCR Scan	UPA800T 2SC4228) uPA800T transistor NEC D 587 de 535	PDF

TRANSISTOR D 808 Search Results

TRANSISTOR D 808 Result Highlights (5)

TRANSISTOR D 808 Datasheets Context Search

tip122 tip127 audio amp schematic

Untitled

GT45F122

LL1608-FH

0338 transistor

Untitled

Untitled

transistor NEC D 822 P

Untitled

BU808

y51 h 120c

transistor 808

Untitled

1.4464

Untitled

Untitled

mj100bk100

MJ150BK100

transistor tt 2222

BLF543

marking 8fb

Beckman 661

8fc marking code

transistor NEC D 587