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    TRANSISTOR D 587 Search Results

    TRANSISTOR D 587 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 587 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    CEM8435A

    Abstract: No abstract text available
    Text: CEM8435A March 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V , -7.9A , RDS ON =24mΩ @VGS=-10V. RDS(ON)=40m Ω @VGS=-4.5V. D D D D 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM8435A CEM8435A

    940 629 MOTOROLA 113

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


    Original     		PDF MRF158/D MRF158 940 629 MOTOROLA 113 Nippon capacitors

    MTP1N100E

    Abstract: AN569
    Text: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 1000 VOLTS


    Original     		PDF MTP1N100E/D MTP1N100E MTP1N100E/D* MTP1N100E AN569

    BST72A

    Abstract: No abstract text available
    Text: BST72A JV _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST72A

    BST110

    Abstract: P-channel max 083
    Text: 711002b GObVTMB 1Ô3 IPH IN BST110 P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers. Features • • • • Very low RpSon


    OCR Scan     		PDF 711002b BST110 200mA BST110 P-channel max 083

    GSO 69

    Abstract: No abstract text available
    Text: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST110 DS3c17b GSO 69

    727 Transistor power values

    Abstract: BST110 transistor wz
    Text: • bbSB^ai OGSa'iTM fi'îO « A P X N AMER PHILIPS/DISCRETE BST110 b?E T> P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BST110 200mA TZ22045 727 Transistor power values BST110 transistor wz

    BUK657-500B

    Abstract: fet N-Channel transistor 250V DS Transistor TL 31 AC
    Text: N AMER PHILIPS/DISCRETE hTE D ^53^31 0030AT0 Efll • APX Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF 0030AT0 BUK657-500B t0220ab fet N-Channel transistor 250V DS Transistor TL 31 AC

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BUK657-500B

    Abstract: T0220AB transistor D 587
    Text: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK657-500B T0220AB transistor D 587

    Untitled

    Abstract: No abstract text available
    Text: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF bb53R31 QQ30fl O220AB BUK657-500B bbS3T31 Q030flT4

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BFT25

    Abstract: bft25 transistor
    Text: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features


    OCR Scan     		PDF BFT25 OT-23 7ZS76S4 Z67656 BFT25 bft25 transistor

    BUZ72

    Abstract: V103 TRANSISTOR V103 F5101
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ72 ObE D • ^53^31 ~ 0014430 7 . T - 3*7-1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ72 bbS3T31 7zms71j bfci53cà 001443b T-39-11 BUZ72 V103 TRANSISTOR V103 F5101

    Untitled

    Abstract: No abstract text available
    Text: S AM SU N G SEMICONDUCTOR INC MPS3706 IME D | 7^4142 00G7317 1 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Em ltter Voltage: Veto= 20V • C ollector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM R ATING S (Ta=25°C)


    OCR Scan     		PDF 00G7317 MPS3706 625mW 2N4400

    BUY89

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.


    OCR Scan     		PDF BUY89 bfaS3131 BUY89

    BFQ32M

    Abstract: transistor D 587 BFQ63 GHz PNP transistor
    Text: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF BFQ32M 711062b 0DHS43Q BFQ63. IS22I 7110flEb 00M5M35 MBB347 BFQ32M transistor D 587 BFQ63 GHz PNP transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    OCR Scan     		PDF MTP1N100E/D 21A-06

    BUK475-400B

    Abstract: LD25C BUK475 3909
    Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode


    OCR Scan     		PDF OT186A 475-400B 711002b 0d44b4" BUK475-400B LD25C BUK475 3909

    MOTOROLA POWER TRANSISTOR lc 945

    Abstract: zener ap 474 940 629 MOTOROLA 113
    Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.


    OCR Scan     		PDF RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113

    Beckman 661

    Abstract: 661 Beckman MRF134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F M O S F E T Line 5.0 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2.0-400 MHz N-CHANNEL MOS BROADBAND RF POWER . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l a m p lifie r a n d o s c illa to r


    OCR Scan     		PDF

    transistor NEC D 587

    Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS


    OCR Scan     		PDF uPA802T 2SC4227) transistor NEC D 587 LS 1691 BM l 9143 NEC D 587

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The ¿¡PA802T has b u ilt-in 2 lo w -v o lta g e tra n s is to rs w h ic h are d e sig n e d PACKAGE DRAWINGS


    OCR Scan     		PDF PA802T PA802T 2SC4227) /IPA802T