NTE165
Abstract: NPN Transistor 1500V
Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability
|
Original
|
PDF
|
NTE165
NTE165
100mA,
NPN Transistor 1500V
|
NPN/TRANSISTOR 187
Abstract: NTE165
Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability
|
Original
|
PDF
|
NTE165
NTE165
100mA,
100mA
NPN/TRANSISTOR 187
|
Untitled
Abstract: No abstract text available
Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability
|
Original
|
PDF
|
NTE165
NTE165
100mA,
|
NPN Transistor 1500V
Abstract: NTE165
Text: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability
|
Original
|
PDF
|
NTE165
NTE165
100mA,
NPN Transistor 1500V
|
NPN Transistor 1500V
Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V
|
Original
|
PDF
|
NTE238
NTE238
Cont00V,
NPN Transistor 1500V
transistor tl 187
187 npn transistor
NPN Transistor 1500V 20a
|
NTE327
Abstract: transistor NTE327
Text: NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain
|
Original
|
PDF
|
NTE327
NTE327
transistor NTE327
|
NTE162
Abstract: NPN Transistor 10A 400V
Text: NTE162 Silicon NPN Transistor TV Vertical Deflection Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCEX = 400V D Gain Specified to 3.5A
|
Original
|
PDF
|
NTE162
NTE162
200mA,
NPN Transistor 10A 400V
|
NTE163A
Abstract: No abstract text available
Text: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V
|
Original
|
PDF
|
NTE163A
NTE163A
100mA,
|
NTE389
Abstract: No abstract text available
Text: NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction
|
Original
|
PDF
|
NTE389
NTE389
|
tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
|
Original
|
PDF
|
DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
|
305 Power Mosfet MOTOROLA
Abstract: Transistor motorola 418 MGW30N60
Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
|
Original
|
PDF
|
MGW30N60/D
MGW30N60
MGW30N60/D*
305 Power Mosfet MOTOROLA
Transistor motorola 418
MGW30N60
|
Transistor motorola 418
Abstract: 305 Power Mosfet MOTOROLA MGW30N60
Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
|
Original
|
PDF
|
MGW30N60/D
MGW30N60
MGW30N60/D*
Transistor motorola 418
305 Power Mosfet MOTOROLA
MGW30N60
|
NTE387MP
Abstract: NTE387
Text: NTE387 Silicon NPN Transistor Power Amp, Switch Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
|
Original
|
PDF
|
NTE387
NTE387MP
NTE387
|
max10169
Abstract: 2SK702D
Text: 6427525 N E C ELECTRONICS N E C 98 D INC E LECTRONICS INC 15 18881 D T - OOlflflfl], 3 PE 1 ^ 5 7 5 5 5 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK702 D E SC R IPTIO N The 2SK702 is N-Channel MOS Field Effect Power Transistor PACAKGE D IM E N S IO N S
|
OCR Scan
|
PDF
|
2SK702
2SK702
T-39-11
max10169
2SK702D
|
|
|
lem HA
Abstract: transistor bu2520d BU2520D
Text: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
|
OCR Scan
|
PDF
|
002037b
BU2520D
lem HA
transistor bu2520d
BU2520D
|
2SK659
Abstract: No abstract text available
Text: C ELECTRONICS INC Tfl »F|t.M27S2S DOlflñS11] D ~ f D ^ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 D E S C R IP T IO N The 2 S K 6 5 9 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.
|
OCR Scan
|
PDF
|
2SK659
2SK659
-55to
T-39-11
|
PWS300
Abstract: 2SK591 10VRM
Text: 642 752 5 N E C N E C ELEC TRONI CS INC 98D 18840 DT-'J?-'// ELECTRONICS INC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK591 D E S C R IP T IO N The 2SK591 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.
|
OCR Scan
|
PDF
|
2SK591
2SK591
4575B5
T-39-11
--V-90
PWS300
10VRM
|
TGAM 1
Abstract: 2SK702 G8TE
Text: 6427525 N EC N E C E L E C T RO N I CS INC 9 8 D 18881 • " i n a n i m i ELECTRONICS INC 10 ti pi D T~ » 'B u n i f - / / 'il DE I tjLJEVSES DDlflflfli 3 11,11 " * " Ê~. ■ ■■ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK702 DESCRIPTION The 2SK702 is N-Channel MOS Field Effect Power Transistor
|
OCR Scan
|
PDF
|
jfaLtg75B5
2SK702
2SK702
TGAM 1
G8TE
|
Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC "TA DeT|l,427S25 D D i a a S T □ I ~r ~ * el - ' i i D N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 D E S C R IP T IO N The 2 S K 6 5 9 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.
|
OCR Scan
|
PDF
|
427S25
2SK659
T-39-11
|
CA3146P
Abstract: No abstract text available
Text: MOTOROLA _ _ SEMICONDUCTOR CA3146 TECHNICAL DATA General Purpose Transistor Array GENERAL PURPOSE TRANSISTOR ARRAY One Differentially Connected Pair and Three Isolated Transistor Arrays SILICON M O NOLITHIC IN T E G R A T E D CIRCUIT T he C A 3 1 46 is designed for general purpose, low power applications in the
|
OCR Scan
|
PDF
|
CA3146
CA3146P
|
BLW95
Abstract: neutralization push-pull PHILIPS 4312 amplifier IEC134 w896 SOT-121A
Text: PHILIPS I N T ERNATIONAL bSE D • 711002b ÜObBHQB J 323 PHIN BLW95 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a
|
OCR Scan
|
PDF
|
00b3403
BLW95
711002b
00b3411
7Z77903
7Z77902
BLW95
neutralization push-pull
PHILIPS 4312 amplifier
IEC134
w896
SOT-121A
|
Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S
|
OCR Scan
|
PDF
|
2SK703
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
PDF
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
PDF
|
500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
|
