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    TRANSISTOR D 1273 Search Results

    TRANSISTOR D 1273 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 1273 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    "UV led" 5mm

    Abstract: 5mm uv led datasheet LED 10mm white UV-LED diode led uv stretcher uv led light dark sensor circuit white led 5mm led white 5mm
    Text: S60 Series Contrast and Luminescence Sensors Farnell Codes : 4101194 - 1273 • · Microprocessor teach-in system with lockout facility Circular LED emission or switching frequency 5KHz ‘W’ version, 2 KHz, ‘U’ version Selectable 20ms pulse stretcher


    Original     		0-30V Cable0-30V 400-700mm 0-40mm 370mm "UV led" 5mm 5mm uv led datasheet LED 10mm white UV-LED diode led uv stretcher uv led light dark sensor circuit white led 5mm led white 5mm PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN PDF

    23N50

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 23N50 PDF

    8140 SOURIAU

    Abstract: BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 8140 SOURIAU BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115 PDF

    BSH101

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product speciÞcation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b 2000 Jul 19 Philips Semiconductors Product specification


    Original     		M3D088 BSH101 SC13b SCA56 137107/00/02/pp12 BSH101 PDF

    BSH101

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 June 19 File under Discrete Semiconductors, SC13b 1997 Nov 28 Philips Semiconductors Product specification


    Original     		M3D088 BSH101 SC13b SCA56 137107/00/02/pp12 BSH101 PDF

    tda8362b

    Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
    Text: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		1N4003ID 1N4005G 1N4006G 30-Jun-02 30-Jun-01 30-Jun-01 31-Dec-01 tda8362b OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262 PDF

    transistor r1009

    Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
    Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02


    Original     		CTM805SVSERV 107-800455-4G 127-476042-0D 130-600101-0G 190-R63300-02 774-R63301-00 774-R63302-00 774-R63303-00 849-R63301-00 892-R63301-06 transistor r1009 ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor PDF

    NTE74C373

    Abstract: NTE74HC299 NTE74LS327 NTE74LS299 NTE74HC373
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74HC299, 20-Lead DIP, See Diag. 294 NTE74LS299 8-Bit Shift Register w/3-State Outputs so ri d et NTE74LS327 14-Lead DIP, See Diag. 247 Dual Voltage Controlled Oscillator NTE74LS352 16-Lead DI P, See Diag. 249


    OCR Scan     		NTE74HC299, 20-Lead NTE74LS299 NTE74LS327 14-Lead NTE74LS352 16-Lead NTE74LS153) NTE74LS353 NTE74C373 NTE74HC299 NTE74LS327 NTE74LS299 NTE74HC373 PDF

    transistor BF 697

    Abstract: transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn
    Text: Philips Sem iconductors • 7 1 1 D f l2 t j 00bT3D5 VbT ■ P H IN Product specification NPN 9 GHz wideband transistor BFS540 PINNING FEA T U R ES PIN CONFIGURATION PIN • High power gain D ESCRIPTIO N Code: N4 • Low noise figure • High transition frequency


    OCR Scan     		711Dfl2tj 00bT3D5 BFS540 OT323 MBC870 OT323. emitt-172 transistor BF 697 transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan     		2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    TL311

    Abstract: LM311
    Text: TYPES TL111, TL311, TL311A JFET-INPUT DIFFERENTIAL C OM P A R A T O R S WITH STROB ES LINEAR INTEGRATED CI RCUITS _ B U L L E T IN N O . D L -S 12737, N O V E M B E R 1979 • • Fast Response Times • Strobe Capability • Designed to Replace LM111 and LM311


    OCR Scan     		TL111, TL311, TL311A LM111 LM311 TL311 LM311 PDF

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    MDA234

    Abstract: PHC2300 MDA233 P-Channel Enhancement FET HAT25
    Text: Philips Semiconductors Product specification Complementary enhancement mode MOS transistors FEATURES PHC2300 PINNING - SOT96-1 S08 • High-speed switching PIN SYMBOL 1 S1 2 • No secondary breakdown. DESCRIPTION source 1 91 gate 1 APPLICATIONS 3 S2 source 2


    OCR Scan     		PHC2300 OT96-1 MRC235 MDA234 PHC2300 MDA233 P-Channel Enhancement FET HAT25 PDF

    equivalent transistor TT 3043

    Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
    Text: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1


    OCR Scan     		7110fl2tj BFS540 OT323 MBC370 OT323. emitte-176 equivalent transistor TT 3043 transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308 PDF

    2n3773 power Amplifier circuit diagrams

    Abstract: 10000 watt stabilizer transformer winding formula 2N3773 audio amplifier diagram lm380 equivalent LM566 "direct replacement" LM1820 LM1800 schematic diagram audio power amplifier using 2n3055 mc1349 GS 358S
    Text: Volume 2 National P R E F A C E The second volum e o f N a tio n a l's Linear A p p lic a tio n s h a n d b o o k picks up w here V o lu m e I le ft o ff. Data sheets, a p p lic a tio n briefs and p e rtin e n t articles published in th e 3 years since V o lu m e I was p rin te d are


    OCR Scan     		PDF

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram PDF

    holtek sound chip

    Abstract: No abstract text available
    Text: HOLTEK r r HT82013 ADPCM Synthesizer with External ROMs Features • • • • • • • • Operating voltage: 3.5V~5.0V Directly interface with external parallel ROMs Size of external parallel ROMs up to 8Mbx3 12-bit analysis and 3 bit ADPCM coding algorithm


    OCR Scan     		12-bit 1368-second 58MHz HT82013 HT82003 holtek sound chip PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK2826 TO-220AB FEATURES 2SK2826-S TO-262 • Super Low On-State Resistance


    OCR Scan     		2SK2826 O-220AB 2SK2826-S O-262 2SK2826-ZJ O-263 D11273EJ2V0DS00 PDF

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn PDF

    Untitled

    Abstract: No abstract text available
    Text: HT82011 HOLTEK r r ADPCM Synthesizer with External ROMs Features • • • • • • • Operating voltage: 3.5V~5.0V Directly interface with external parallel ROMs External ROM options: - lM bx4 - 2Mbx3 - 4Mbx2 - 8M bxl 12-bit analysis and 3-bit/4-bit ADPCM


    OCR Scan     		12-bit 58MHz HT82011 58MHz A17/CS3 A18/CS2 A19/CS1 PDF

    SIEMENS BFP405

    Abstract: marking A06 transistor A06
    Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability


    OCR Scan     		BFP405 25-Line Transistor25 62702-F-1592 OT343 SIEMENS BFP405 marking A06 transistor A06 PDF