TRANSISTOR CR SOT23 Search Results

TRANSISTOR CR SOT23 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

TRANSISTOR CR SOT23 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sot-23 npn marking code cr Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code	Original	2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04	PDF
Untitled Abstract: No abstract text available Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES z Power dissipation: PCM=200mW z High ICM MAX. ,I CM(MAX.)=0.5mA. z Low VCE(sat). z Complements the 2SA1036. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor	Original	2SC2411 200mW 2SA1036. OT-23 BL/SSSTC097	PDF
ZVN4306A TO-5 Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v Text: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage	Original	100mA/div. 50ns/div. x15mm FMMT618/718 700mW. 500mA/div. 100ns/div. ZVN4306A TO-5 ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v	PDF
Untitled Abstract: No abstract text available Text: ZXSC400 LED DRIVER BOOST CONVERTER DESCRIPTION The ZXSC400 is a voltage m ode boost converter in the SOT23-6 package. Its low feedback voltage allow s the current in a chain of LEDs to be set and accurately m onitored w ith a single resistor giving m inim al losses. Its excellent load and line	Original	ZXSC400 ZXSC400 OT23-6 OT23-6	PDF
transistor C3866 Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246 Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)	Original		PDF
CR SOT23 Abstract: SOT-23 CP CR SOT-23 Text: 2SC2411 SOT-23 Transistor NPN 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	OT-23 2SC2411 OT-23 2SA1036 100mA 500mA 100MHz CR SOT23 SOT-23 CP CR SOT-23	PDF
transistor smd marking CQ Abstract: transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K Text: Transistors SMD Type Medium Power Transistor 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE sat . Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1	Original	2SC2411K OT-23 100mA 500mA/50mA -20mA, 100MHz transistor smd marking CQ transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K	PDF
Untitled Abstract: No abstract text available Text: Contents Features . 1 Applications. 1 Block Diagram . 2	Original		PDF
Untitled Abstract: No abstract text available Text: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	OCR Scan	BFT93 BFR93 BFR93A.	PDF
BF747 Abstract: MBB400 DB64 transistor HJ 388 Text: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.	OCR Scan	bb53-J31 00E4bÃ BF747 BF747 MBB400 DB64 transistor HJ 388	PDF
transistor E 13009 Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009 Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d \| ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ \| «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009	PDF
BFR53 Abstract: transistor 1061 transistor h 1061 Text: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film	OCR Scan	00251Mb BFR53 bbS3T31 BFR53 transistor 1061 transistor h 1061	PDF
transistor cross reference Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466 Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film	OCR Scan	002514b BFR53 0D251SD bbS3T31	PDF

MMBA813S3 Abstract: motorola opto MMBA813S2 MMBA813S4 Text: 34 MOTOROLA SC i D I O D E S / O P T O 6367255 MOTOROLA SC Î F \|t . 3 b ? a S S 003fl27t. 0 34C DIO DES/O PTO 38276 T - Z 'T - t f SOT23 (continued) MMBA813S2,3,4 d e v ic e no . SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C \| • Designed for audio amplifier and driver applications.	OCR Scan	3b75SS 03flS7t, MMBA813S2 MMBA813S3 MMBA813S4 motorola opto	PDF
30255 Abstract: qSOT-23 Text: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF\|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching	OCR Scan	b3b72SS BCW66F BCW66G BCW66H b3b725S 30255 qSOT-23	PDF
Untitled Abstract: No abstract text available Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSU E 2 - MARCH 1996 FEATURES * A v a la n c h e m o d e operation * 5 0 A Peak a va la n ch e current * L o w inductance p a cka gin g A P P L IC A T IO N S * L a se r L E D d riv e rs	OCR Scan	FMMT413	PDF
Untitled Abstract: No abstract text available Text: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures	OCR Scan	bb53c 002S3bb BFT25A BFT25A	PDF
Untitled Abstract: No abstract text available Text: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been	OCR Scan	2N7000/2N7002/NDF7000A/NDS7002A	PDF
Untitled Abstract: No abstract text available Text: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current	OCR Scan	KSC3123 OT-23 200MHz, 260MHz	PDF
Untitled Abstract: No abstract text available Text: b?E D Philips Semiconductors Datasheet status Product specification date of issue July 1993 • bbS3^31 0 0 23 ^1 ^ TTfl ■ APX BSS123 NAf1ER philips/1>;,:scre:te: N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL,	OCR Scan	BSS123	PDF
NPN transistor SST 117 Abstract: transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 BFR540 URA698 transistor bf 760 Text: P h iJ ip ^ e m lc o n d u c t o r ^ ^ ^ ^ ^ ^ b b 5 3 T 3 lD □ 3 n b^ SM7 M AP X Product specification NPN 9 GHz wideband transistor _ FEATURES ^ i N AUER BFR540 P H IL IP S /D IS C R E T E bTE PINNING • High power gain • Low noise figure PIN DESCRIPTION	OCR Scan	BFR540 BFR540 NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 URA698 transistor bf 760	PDF
IRF 4145 Abstract: KSC2756 marking uma samsung tv gee transistor Text: AMSUN6 SEMICONDUCTOR INC KSC2756 14E D \| 7^4142 QOOb^k 2 \| NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 5 MIXER FOR VHF TV TUNER SOT-23 • HIGH Gee lÿp. 23d8 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic • Rating Symbol Collector-Base Voltage Coiector-Emitter Voltage	OCR Scan	KSC2756 T-31-15 OT-23 V300M 400MHz 910mA 400MHz 300MHz 200MH 100MHz IRF 4145 marking uma samsung tv gee transistor	PDF
Untitled Abstract: No abstract text available Text: KSC2734 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSC. FOR UHF TV TUNER SOT-23 High fT: 3.5GHz TYP ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation	OCR Scan	KSC2734 OT-23 D0247Ã DD24765	PDF

TRANSISTOR CR SOT23 Search Results

TRANSISTOR CR SOT23 Result Highlights (5)

TRANSISTOR CR SOT23 Datasheets Context Search

sot-23 npn marking code cr

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ZVN4306A TO-5

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transistor C3866

CR SOT23

transistor smd marking CQ

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BF747

transistor E 13009

BFR53

transistor cross reference

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MMBA813S3

30255

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NPN transistor SST 117

IRF 4145

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