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    TRANSISTOR CON HFE 400 Search Results

    TRANSISTOR CON HFE 400 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CON HFE 400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8-unit darlington transistor array

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54583FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54583FP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		PDF M54583FP 400mA M54583FP 400mA) 20P2N-A 8-unit darlington transistor array

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB0726 2SB726 Silicon PNP epitaxial planer type For general amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 5.0±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. • Absolute Maximum Ratings Parameter


    Original     		PDF 2SB0726 2SB726) O-92-A1

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


    Original     		PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099

    MSC81450M

    Abstract: 81450M
    Text: MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN .400 x .500 2LF L S038


    Original     		PDF MSC81450M 81450M MSC81450M 81450M

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • bb53^31 □D2flD31 813 PH2369 IAPX l SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended for high-speed switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF D2flD31 PH2369 oa2fl03b

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.


    OCR Scan     		PDF 002b0D3 PZT3904 OT-223)

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN2471A 2SC4106 N0.247IA NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications Features . . . . High breakdown voltage and high reliability Fast switching speed Wide ASO Adoption of MBIT process Absolute Maxim» Ratings at Ta=25°C


    OCR Scan     		PDF EN2471A 2SC4106 247IA 00V/7A 1000m 900mA 800mA 600mA H707b

    APX-100

    Abstract: l4 tam PH2369 Silicon Epitaxial Planar Transistor philips
    Text: N AUER PHILIPS/DISCRETE bTE D • bbSB'm 0020031 fllB PH2369 I SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended fo r high-speed switching applications. QUICK REFERENCE D A T A Collector-base voltage open emitter


    OCR Scan     		PDF PH2369 APX-100 l4 tam PH2369 Silicon Epitaxial Planar Transistor philips

    "MARKING CODE P1"

    Abstract: marking code 731 sot-89 DDSS173 PXT3904
    Text: m L .b s a 'm d d s s ci7 3 7 3 e] « à p x N AMER PHILIPS/DISCRETE PXT3904 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a SOT-89 envelope prim arily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE DATA


    OCR Scan     		PDF DDSS173 PXT3904 OT-89 OT-89. 7Z74968 "MARKING CODE P1" marking code 731 sot-89 PXT3904

    1N916

    Abstract: PZT3904 smd transistor 3t
    Text: • bbSBTBl 00Sb003 D7M H A P X N AMER PHILIPS/DISCRETE P ZT 3904 b?E T> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.


    OCR Scan     		PDF 002b003 PZT3904 OT-223) 1N916^ 1N916( 7Z74968 1N916 PZT3904 smd transistor 3t

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J> BUT11 BUT11A _ y v _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.


    OCR Scan     		PDF bbS3T31 BUT11 BUT11A O-220

    buw13a

    Abstract: Philips BUW13A BUW13
    Text: i i N AUER PHILIPS/DISCRETE bb53131 QQS6547 7^5 I lAPX blE D BUW13 BUW13A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.


    OCR Scan     		PDF bb53131 QQS6547 BUW13 BUW13A 7Z88786 buw13a Philips BUW13A BUW13

    BUW12A

    Abstract: No abstract text available
    Text: BUW12 BUW12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA BUW12 BUW12A


    OCR Scan     		PDF BUW12 BUW12A BUW12A MBC096

    Untitled

    Abstract: No abstract text available
    Text: N A PIER PHILIPS/DISCRETE bb53T31 0QEA531 32fl b'lE ]> APX BUW12 BUW12A J V SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


    OCR Scan     		PDF bb53T31 0QEA531 BUW12 BUW12A BIJW12A

    BUW11

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bb53= 31 0026515 165 b'lE D APX BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


    OCR Scan     		PDF BUW11 BUW11A BUW11

    2SA1382

    Abstract: A1382
    Text: 2SA1382 TOSHIBA 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX High DC Current Gain : hFE = 150-400 Iç; = —0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)


    OCR Scan     		PDF 2SA1382 75MAX 2SA1382 A1382

    p2x transistor

    Abstract: transistor marking code p2x PMST4401 bbS3T31
    Text: 0. . e . „ . Philips Semiconductors • bbSB^l 0025^42 DbS M A P X " n AHER P H I L I P S / D I S C R E T E _ . ._ t. Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION


    OCR Scan     		PDF PMST4401 OT323 PMST4401 bbS3cl31 p2x transistor transistor marking code p2x bbS3T31

    BUW12

    Abstract: BUW12 PHILIPS BUW12A
    Text: I I N AUER PHILI P S / D I S C R E T E bTE V m bb53^31 0 0 2 0 3 3 1 358 1 IAPX BUW12 BUW12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.


    OCR Scan     		PDF bb53131 BUW12 BUW12A BUW12 PHILIPS BUW12A

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL .jír ^ TS » r i B i l ñ S T O OOOB144 S EMI CON DU CT OR General Semiconductor . Industries, Inc. 95D 02144 D 15 Am p NPN 300, 350, 400V 2N6653, 54, 55 SQ U H BEn COMPANY X G SR 15030,35,40 C 2R H IG H SPEED /H IG H PO W ER SW ITCH IN G T R A N S IS T O R S


    OCR Scan     		PDF OOOB144 2N6653, P6302 7B92A 67QtiH X910-950-1942

    beta transistor 2N2222

    Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
    Text: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N3976 M23P-XS16 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150

    Untitled

    Abstract: No abstract text available
    Text: 2SA1362 T O SH IB A 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • + 0 .5 2 . 5 - 0 .3 High DC Current Gain : hpE —120~400 Low Saturation Voltage


    OCR Scan     		PDF 2SA1362 400mA,

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPTA94 Semiconductor Corp. SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP sili­ con planar epitaxial transistors designed for extremely high voltage applications.


    OCR Scan     		PDF CMPTA94 OT-23 MIN00 CP710 13-November OT-23

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPTA46 Semiconductor Corp. SURFACE MOUNT NPN EXTREMELY HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA46 type is a surface mount epoxy molded NPN sili­ con planar epitaxial transistors designed for extremely high voltage applications.


    OCR Scan     		PDF CMPTA46 20-February OT-23 OT-23

    TRANSISTOR D 819

    Abstract: transistor c94
    Text: Central“ CMPTA94 Semiconductor Corp. SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP sili­ con planar epitaxial transistors designed for extremely high voltage applications.


    OCR Scan     		PDF CMPTA94 OT-23 CP710, 13-November OT-23 TRANSISTOR D 819 transistor c94