TRANSISTOR COMMON BASE AMPLIFIER Search Results

2470

Abstract: 55AP transistor Common Base amplifier
Contextual Info: R.A.P.992605-BEHRE 2425-25 25 WATT, 24V, Class C Microwave 2410-2470 MHz GENERAL DESCRIPTION CASE OUTLINE 55AP Common Base Narrow Lead The 2425-25 is a common base bipolar transistor capable of providing 25 Watts of Class C RF output power over the band of 2410-2470 MHz. This transistor is

2SC5170

Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for

2sa1929

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for

TAN75A

Abstract: common base transistor
Contextual Info: TAN75A NPN RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: The ASI TAN75A is a Common Base Transistor Designed for TACAN Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

J162

Abstract: transistor j162 SATCOM ASAT35L
Contextual Info: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

UHF TRANSISTOR

Abstract: 700M SG991AC
Contextual Info: GAE GREAT AMERICAN ELECTROINCS SG991AC Silicon NPN high power UHF transistor SG991AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:

TAN250A

Abstract: TACAN transistor TACAN
Contextual Info: TAN250A RF POWER TRANSISTOR DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. PACKAGE STYLE FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching MAXIMUM RATINGS

norton amplifier

Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Contextual Info: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output

MSC80183

Abstract: MSC85623
Contextual Info: MSC80183 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package

UHF TRANSISTOR

Abstract: SG9132AC
Contextual Info: w GAE GREAT AMERICAN ELECTROINCS SG9132AC Silicon NPN high power UHF transistor SG9132AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

Abstract: 2.4 ghz transmitter rf test
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR

UHF TRANSISTOR

Abstract: SG9101AC transistor Common collector configuration npn 28v 100w amplifier
Contextual Info: GAE GREAT AMERICAN ELECTROINCS SG9101AC Silicon NPN high power UHF transistor SG9101 AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:

AM0912-150

Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
Contextual Info: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

AM0912-080

Abstract: TACAN TACAN transistor
Contextual Info: AM0912-080 RF POWER TRANSISTOR DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NLFL

Contextual Info: AM0912-080 RF POWER TRANSISTOR DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NLFL

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:

2689* transistor

Abstract: MRF1035
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor Designed for 10 25-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 70 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F 1500 The RF Line M icrowave Pulse Power Transistor Motorola Preferred Device Designed for 1025-1150 MHz pulse common base amplifier applications such as DME. • 500 W PEAK . 1025-1150 MHz MICROWAVE POWER TRANSISTOR

motorola 269-5

Abstract: z627
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 1 0 25-1 150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 150 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR

BF314

Abstract: TRANSISTOR bf314
Contextual Info: ' "JÊ S ILIC O N sS NPN HIGH PLANAR EPITAXIAL FREQUENCY TRANSISTOR % MECHANICAL OUTLINE GENERAL DESCRIPTION : The BF31^ is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration. TO-92F

MMBTH10RG

Contextual Info: MMBTH10RG MMBTH10RG NPN RF Transistor C • This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators.

motorola sps transistor

Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR