2SD1843
Abstract: diode dumper
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to
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2SD1843
2SD1843
diode dumper
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2SC5060
Abstract: 2SC5060 equivalent
Text: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”
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2SC5060
65Max.
2SC5060
2SC5060 equivalent
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2SD2167
Abstract: T100 2A 5v ZENER DIODE
Text: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.
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2SD2167
SC-62
A/50mA
30MHz
2SD2167
T100
2A 5v ZENER DIODE
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Untitled
Abstract: No abstract text available
Text: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.
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2SD2167
SC-62
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Untitled
Abstract: No abstract text available
Text: Medium Power Transistor Motor, Relay drive (90 +20 −10 , 2A) 2SD2170 zDimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads.
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2SD2170
SC-62
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2SD2167
Abstract: T100
Text: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.
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2SD2167
SC-62
2SD2167
T100
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ZENER DIODE 2A
Abstract: 2SD2167 T100 2A 5v ZENER DIODE
Text: 2SD2167 Transistors Power Transistor 31±4V, 2A 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads.
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2SD2167
SC-62
A/50mA
30MHz
ZENER DIODE 2A
2SD2167
T100
2A 5v ZENER DIODE
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5v ZENER DIODE 0.1%
Abstract: marking DM zener diode 2A 5v ZENER DIODE 2SD2170 T100
Text: 2SD2170 Transistors Medium Power Transistor Motor, Relay drive (90 +20 −10 , 2A) 2SD2170 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to
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2SD2170
SC-62
5v ZENER DIODE 0.1%
marking DM zener diode
2A 5v ZENER DIODE
2SD2170
T100
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NEC diode
Abstract: transistor marking 7D 2SD1695 C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and
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2SD1695
2SD1695
NEC diode
transistor marking 7D
C11531E
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Zener diode smd marking 27
Abstract: 2A 5v ZENER DIODE smd zener diode 5v ZENER DIODE 2A SMD TRANSISTOR MARKING 2A 2SD2167
Text: Transistors SMD Type Power Transistor 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W on 40 40 0.7mm ceramic board . Absolute Maximum Ratings Ta = 25
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2SD2167
30MHz
Zener diode smd marking 27
2A 5v ZENER DIODE
smd zener diode 5v
ZENER DIODE 2A
SMD TRANSISTOR MARKING 2A
2SD2167
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2SC5060
Abstract: 9010V
Text: Power transistor 9010V, 3A 2SC5060 Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain.
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2SC5060
65Max.
R0039A
2SC5060
9010V
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electronic ballast
Abstract: electronic ballast for fluorescent lighting electronic ballast schematic BUL1603ED
Text: BUL1603ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL1603ED
BUL1603ED
electronic ballast
electronic ballast for fluorescent lighting
electronic ballast schematic
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BUL1603ED
Abstract: electronic ballast for fluorescent lighting
Text: BUL1603ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BUL1603ED
BUL1603ED
O-220
electronic ballast for fluorescent lighting
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Untitled
Abstract: No abstract text available
Text: BUL1603ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BUL1603ED
O-220
BUL1603ED
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electronic ballast for fluorescent lighting
Abstract: BUL1403ED
Text: BUL1403ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL1403ED
BUL1403ED
O-220
electronic ballast for fluorescent lighting
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BUL903ED
Abstract: No abstract text available
Text: BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL903ED
BUL903ED
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P011C
Abstract: BUL903ED
Text: BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL903ED
BUL903ED
P011C
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schematic diagram of energy saving lamps
Abstract: schematic diagram of energy saving device BUL903ED ELECTRONIC BALLAST 3 LAMP SCHEMATIC ELECTRONIC BALLAST 6 LAMP SCHEMATIC electronic ballast schematic
Text: BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL903ED
BUL903ED
schematic diagram of energy saving lamps
schematic diagram of energy saving device
ELECTRONIC BALLAST 3 LAMP SCHEMATIC
ELECTRONIC BALLAST 6 LAMP SCHEMATIC
electronic ballast schematic
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sc6202
Abstract: SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100
Text: 2SD2167 Power Transistor 31±4V, 2A 2SD2167 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due
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2SD2167
40x40x0
SC-62
/50mA
30MHz
sc6202
SC-6202
ZENER DIODE 2A
MARKING DL
2SD2167
T100
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2A 5v ZENER DIODE
Abstract: 2sd2170 T100 marking DM zener diode transistor collector diode protection SC-62 EIAJ
Text: 2SD2170 Transistors_ Medium Power Transistor Motor, Relay drive (903, 2A) 2SD2170 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to
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2SD2170
SC-62
30MHz
2A 5v ZENER DIODE
2sd2170
T100
marking DM zener diode
transistor collector diode protection
SC-62 EIAJ
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Untitled
Abstract: No abstract text available
Text: BUL1403ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL1403ED
BUL1403ED
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2SC5576
Abstract: No abstract text available
Text: 2SC5576 Medium Power Transistor Motor or Relay drive (60±10V, 4A) 2SC5576 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse power surges due to
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2SC5576
100ms
30MHz
2SC5576
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BUL903ED
Abstract: No abstract text available
Text: BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL903ED
BUL903ED
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2SD1866
Abstract: 2SD2143 2SD2212 2SD2397 T100
Text: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60+1OV, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"
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2SD2212
2SD2143
2SD1866
2SD2397
2SD221212SD214312SD186612SD2397
2SD2212
2SD1866
O-22QFN
2SD2397
T100
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