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    TRANSISTOR CODE MARKING 1P 3 Search Results

    TRANSISTOR CODE MARKING 1P 3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CODE MARKING 1P 3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A 300mW, NPN Small Signal Transistor SOT-23 Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant


    Original     		PDF MMBT2222A 300mW, OT-23 MIL-STD-202, C/10s

    TRANSISTOR 1P

    Abstract: TRANSISTOR code marking 1P 3 marking code 1P SC-89 1P surface mount transistor
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.


    Original     		PDF LMBT2222ATT1G SC-89 SC-89 LMBT2222ATT3G 463C-01 463C-02. TRANSISTOR 1P TRANSISTOR code marking 1P 3 marking code 1P 1P surface mount transistor

    SILICON GENERAL

    Abstract: Transistor MARKING 1P 1P NPN TRANSISTOR code marking 1P 3 1p transistor sot323 MMBT2222AW MMBT2907AW TRANSISTOR MARKING CODE 1P mmbt2907* transistor marking 1p transistor
    Text: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE    Complementary PNP Type Available MMBT2907AW Epitaxial Planar Die Construction


    Original     		PDF MMBT2222AW OT-323 MMBT2907AW) 150mA, 150mA 20-Oct-2009 SILICON GENERAL Transistor MARKING 1P 1P NPN TRANSISTOR code marking 1P 3 1p transistor sot323 MMBT2222AW MMBT2907AW TRANSISTOR MARKING CODE 1P mmbt2907* transistor marking 1p transistor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. 1


    Original     		PDF LMBT2222ATT1 SC-89 LMBT2222ATT3

    LMBT2222ATT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.


    Original     		PDF LMBT2222ATT1G S-LMBT2222ATT1G SC-89 AEC-Q101 LMBT2222ATT3G S-LMBT2222ATT3G 463C-02. LMBT2222ATT1G

    marking 1p npn

    Abstract: MARKING CODE 1P TRANSISTOR code marking 1P 3 J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT
    Text: MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907AT Ultra-Small Surface Mount Package SOT-523 Dim Min Max Typ A A 0.15 0.30 0.22 C B 0.75 0.85 0.80 C 1.45 1.75


    Original     		PDF MMBT2222AT MMBT2907AT) OT-523 OT-523, J-STD-020A MIL-STD-202, 100mA 300mA DS30268 marking 1p npn MARKING CODE 1P TRANSISTOR code marking 1P 3 J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT

    MARKING 318 SC70-6

    Abstract: No abstract text available
    Text: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc


    Original     		PDF MBT2222ADW1T1 SC-88/SC70-6/SOT-363 MBT2222ADW1T1 MARKING 318 SC70-6

    SI-7501

    Abstract: TMC249 7805 voltage regulator working principle 7805 5V REGULATOR IC THREE TERMINAL IR2101 full bridge MARKING CODE 9952 TMC249A-SA Siliconix SI 5504 Fairchild 8333C 7805 TO252
    Text: TMC249 / TMC249A DATA SHEET V2.09 / 2009-Jul-30 1 TMC249/A – DATASHEET High current microstep stepper motor driver with stallGuard , protection / diagnostics and SPI Interface TRINAMIC Motion Control GmbH & Co KG Sternstraße 67 D – 20357 Hamburg


    Original     		PDF TMC249 TMC249A 2009-Jul-30) TMC249/A TMC249A 6000mA TMC239 SI-7501 7805 voltage regulator working principle 7805 5V REGULATOR IC THREE TERMINAL IR2101 full bridge MARKING CODE 9952 TMC249A-SA Siliconix SI 5504 Fairchild 8333C 7805 TO252

    marking 1p transistor

    Abstract: MMBT2222AT-7-F J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT TRANSISTOR MARKING CODE 1P
    Text: MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222AT Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907AT Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-523


    Original     		PDF MMBT2222AT MMBT2907AT) OT-523 OT-523, J-STD-020A MIL-STD-202, Pa-50 DS30268 marking 1p transistor MMBT2222AT-7-F J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT TRANSISTOR MARKING CODE 1P

    SI-7501

    Abstract: 7805 TO252 TMC239A transistor BD 140 working principle in 7805 so8 lm317 so8 MARKING CODE 9952 7805 voltage regulator working principle QFN32 TMC239
    Text: TMC239 / TMC239A DATA SHEET V2.11 / 2009-Jul-30 1 TMC239/A – DATA SHEET High current microstep stepper motor driver with protection, diagnostics and SPI Interface TRINAMIC Motion Control GmbH & Co KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com


    Original     		PDF TMC239 TMC239A 2009-Jul-30) TMC239/A TMC239A 6000mA TMC239 SI-7501 7805 TO252 transistor BD 140 working principle in 7805 so8 lm317 so8 MARKING CODE 9952 7805 voltage regulator working principle QFN32

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT NEW PRODUCT MMBT2222A SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .110 (2.8) .016 (0.4) Top View ♦ This transistor is also available in the TO-92 case with the type designation


    Original     		PDF MMBT2222A OT-23 MPS2222A. OT-23

    mps2222a npn transistor

    Abstract: No abstract text available
    Text: NEW PRODUCT NEW PRODUCT MMBT2222A SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) ♦ This transistor is also available in the TO-92 case with the type designation


    Original     		PDF MMBT2222A OT-23 MPS2222A. OT-23 mps2222a npn transistor

    CYStech Electronics

    Abstract: HBN2411S6R HBP1036S6R dual marking code 1p HBN2412S6R DSA0026081
    Text: CYStech Electronics Corp. Spec. No. : C203S6R Issued Date : 2003.09.12 Revised Date : 2005.03.30 Page No. : 1/ 5 General Purpose NPN Epitaxial Planar Transistors dual transistors HBN2411S6R Features • Two BTC2411chips in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines.


    Original     		PDF C203S6R HBN2411S6R BTC2411chips OT-363 OT-323 500mA/50mA HBP1036S6R OT-363R UL94V-0 CYStech Electronics HBN2411S6R HBP1036S6R dual marking code 1p HBN2412S6R DSA0026081

    MARKING CODE 1P

    Abstract: CODE 1P
    Text: MMBT2222A NPN General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2907A MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃


    Original     		PDF MMBT2222A MMBT2907A) OT-23 2002/95/EC 500mA 150mA 100MHz 150mA Jun-2009, MARKING CODE 1P CODE 1P

    Untitled

    Abstract: No abstract text available
    Text: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage


    Original     		PDF MBT2222ADW1T1G MBT2222ADW1T1/D

    Untitled

    Abstract: No abstract text available
    Text: SBT2222A NPN Silicon Transistor Descriptions PIN Connection • General purpose application  Switching application 2  Low Leakage current  Low collector saturation voltage enabling low voltage operation  Complementary pair with SBT2907A 1 Features


    Original     		PDF SBT2222A SBT2907A OT-23 KSD-T5C052-004

    marking code 1p

    Abstract: No abstract text available
    Text: MMBT2222A NPN General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available MMBT2907A MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


    Original     		PDF MMBT2222A MMBT2907A) OT-23 2002/95/EC marking code 1p

    TRANSISTOR 1P

    Abstract: marking 1p transistor MMBT2222A-1P MMBT2222A MMBT2907A SBT2222A 1P SOT-23
    Text: SBT2222A Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with MMBT2907A


    Original     		PDF SBT2222A MMBT2907A MMBT2222A OT-23 KST-2001-002 TRANSISTOR 1P marking 1p transistor MMBT2222A-1P MMBT2222A MMBT2907A SBT2222A 1P SOT-23

    SBT2222AF

    Abstract: Transistor SBT2907AF
    Text: SBT2222AF v Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907AF


    Original     		PDF SBT2222AF SBT2907AF OT-23F KST-2080-001 SBT2222AF Transistor SBT2907AF

    MAR 641 TRANSISTOR

    Abstract: IRFU1N60A
    Text: PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and


    Original     		PDF 91846B IRFR1N60A IRFU1N60A 08-Mar-07 MAR 641 TRANSISTOR IRFU1N60A

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. http://onsemi.com


    Original     		PDF MMBT2222ATT1 OT-416/SC-75

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan     		PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR

    Siemens A 1458

    Abstract: amplifier siemens sot-363
    Text: SIEMENS BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fy ~ 8 GHz F = 1.4 dE5 at 900 MHz • Two galvanic internal isolated Transistors in one package I 91T I ETl KC2 II m Q62702-F1572


    OCR Scan     		PDF Q62702-F1572 OT-363 IS21I2 900MHz Siemens A 1458 amplifier siemens sot-363

    kn sot23

    Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
    Text: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices


    OCR Scan     		PDF BSV52 OT-23 BSV52 Volt00/300 FMMT2222 FMMT2369A FMMT2369 BSS82B kn sot23 sot-23 Marking KN A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR