TRANSISTOR CJI Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

blw86

Abstract: ferroxcube wideband hf choke BY206
Contextual Info: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

NEX2301

Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

FT1551

Abstract: FT2551 fujitsu ring emitter
Contextual Info: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara

TRANSISTOR 2Sa 1075

Abstract: TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor 2SA1075 transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1075 2SA1076 SILICON PNP RING EMITTER TRANSISTOR RET T h e 2S A 1 0 7 5 /2 S A 1 0 7 6 are silicon PNP general purpose, high power switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­

2N3906

Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906
Contextual Info: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage C ollector-Emitter Vbltage

BST100

Abstract: philips bst100 to92 transistor pinout
Contextual Info: • bbSBÌBl □D23c171 Dfil H A P X BST100 N AMER PHILIPS/DISCRETE b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.

ferrite 4312

Abstract: ferrite beat philips rf choke ferrite CF-800 lb533
Contextual Info: N AMER PHILIPS/DISCRETE tTE J> ^53=131 DDEÔ761 71S M A P X WÊ BLT92/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

2SK800

Abstract: NEC 701 TC-3786
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK800 The 2SK800 is N-channel MOS Field E ffe ct Power Transistor designed fo r converters. FEATURES • PACKAGE D IM EN SIO N S ¡n m illim eters inches Suitable fo r sw itching power supplies, actuater controls,

BY206

Abstract: BZY88-C3V3 BLW34 capacitor polyester philips 100A-2RO-C-PX-50
Contextual Info: N AMER PHILIPS/DISCRETE b^E bhS3«i31 □02^32fc, □‘it. I IAPX BLW34 » Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

marking code Iay

Abstract: marking IAY transistor marking 1f CMPT3640
Contextual Info: Central" C M PT3640 S em ico n d u cto r Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CEN TRAL S E M IC O N D U C T O R CM PT3640 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for satu rated switch ing appl icatrons.

Contextual Info: SEMICONDUCTOR i TECHNICAL DATA 2N4405JAN, JTX Processed per MlL-S-19500 448 PNP Silicon Small-Signal Transistor crystaiomcs 2805 Veterans Hwhwav Oesigned><y genijra^oufpcse sw uchinyano ampui.er 3£*ii>CJit*or,s S u ite 14 Ronkor koma. N.Y. 1177 i MAXIMUM RATINGS

XR-2012

Abstract: L1342
Contextual Info: EX AR CO RP 34 2 2 6 18 EXAR CORP ^j| 34221310 G Q O S Q V ? 7 ~ HST E X A R 9 1D 0 5 0 7 7 X R -2 0 1 1/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The X R -2 0 1 1/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven

Contextual Info: UMW1N/FMW1 h 7 > V * £ /Transistors U M W 1 N F M W 1 • r a T J l ' i - ; U K h 7 > v ^ i> / D u a l Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor — /General Small Signal Amp. 1f f i 1 x - z ' i - i — i - J U 1i'l-J fi^ ü ü /D im e n s io n s U n it: mm)

QM10TE-HB

Abstract: bup transistor bvp DIODE QM10 QM10T
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250

transistor G28

Abstract: G28 transistor buk101
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

transistor marking JB

Abstract: A301 A306 KRA301 KRA302 KRA303 KRA304 KRA305 KRA306
Contextual Info: KRA301KRA306 EPITAXIAL PLANAR PNP TRANSISTOR _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.

KTB2955

Abstract: KTD3055
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD3055 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB2955. • Recommended for 30W —35W Audio Frequency Amplifier output Stage. MILLIMETERS

SMP60N06-18 power mosfet

Abstract: SMP60N06-18 sup50n06-18 SUP50N06 D 1437 transistor
Contextual Info: Tem ic SMP60N06-18 S em i co n d u c t or s N-Channel Enhancement-Mode Transistor, 18-mQ ros on Product Summary VDS (V) 60 VIS Id (A) r DS(on) ( ^ ) 0.018 60 See lower-cost version: SUP50N06-18 D Q T0-220AB o cJi DRAIN connected to TAB Ö s GD S Top View

KTC1027

Abstract: ktc1027 transistor ra-100 KTA1023 transistor ktc1027
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC1027 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTA1023. MAXIMUM RATINGS Ta=25 °C CHARACTERISTIC RATING UNIT SYMBOL Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage

K2025

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1381 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS. FEATURES • High breakdown voltage : V ^ 3 0 0 V . • Small reverse transfer capacitance and excellent high frequency characteristic.

BUK106-50L

Abstract: BUK106-50S diode 06-50S
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK106-50L/S Logic level TOPFET_ BUK106-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general