RN2206
Abstract: RN2201 RN1201 RN1206 RN2202 RN2203 RN2204 RN2205
Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design
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RN2201
RN2206
RN2202
RN2203
RN2204
RN2205
RN1201
RN1206
RN2206
RN1206
RN2203
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RN1101
Abstract: RN1106 RN2001 RN2101 RN2102 RN2103 RN2104 RN2105 RN2106
Text: RN2101~RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101,RN2102,RN2103 RN2104,RN2105,RN2106 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design
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RN2101RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN1101
RN1106
RN2101
RN1106
RN2001
RN2103
RN2106
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RN2301
Abstract: rn2304 RN1301 RN2302 RN2303 RN2305 RN2306
Text: RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design
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RN2301
RN2306
RN2302
RN2303
RN2304
RN2305
RN1301
RN2301
RN2303
RN2306
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"transistor equivalent"
Abstract: BN1A4P
Text: NEC PNP SILICON TRANSISTOR B N 1A 4P DESCRIPTION The BN1A4P is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4.2 MAX. (0.165 MAX. • Bias resistors built-in type PNP transistor equivalent circuit. 2.2 MAX.
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PA33
Abstract: No abstract text available
Text: NEC DESCRIPTION PNP SILICON TRANSISTOR AN1L3Z The A N1L3Z is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 52 MAX. (0204 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit. iC Ri = 4.7 k n
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RN1204
Abstract: RN1203 RN1206 rn1201 RN1202 RN1205 RN2201 equivalent transistor 1206
Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors. l Simplify circuit design
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RN1201
RN1206
RN1202
RN1203
RN1204
RN1205
RN2201
RN1201
RN1206
equivalent transistor 1206
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Untitled
Abstract: No abstract text available
Text: RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2972FS,RN2973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin)
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RN2972FS
RN2973FS
RN1972FS,
RN1973FS
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PA33
Abstract: No abstract text available
Text: PNP SILICON TRANSISTOR AN1F4N DESCRIPTION the AN1F4N is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 52 MAX. (0204 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit. iC B R i = 2 2 k i2
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RN1310
Abstract: RN1311 RN2310 RN2311
Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1310,RN1311 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN1310
RN1311
RN2310,
RN2311
SC-70
961001EAA1'
RN1311
RN2310
RN2311
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RN2211
Abstract: RN1210 RN2210
Text: RN2210,RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2210,RN2211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN2210
RN2211
RN1210,
RN2210
RN2211
RN1210
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RN1312
Abstract: RN1313 RN2312 RN2313
Text: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN2312
RN2313
RN1312,
RN1313
961001EAA2'
RN1312
RN1313
RN2313
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3rn1010
Abstract: RN1010 RN1011 RN2010 RN2011
Text: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN1010,
RN1011
RN1010
RN2010RN2011
SC-43
3rn1010
RN1011
RN2010
RN2011
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RN1307
Abstract: RN1309 RN2307 RN2308 RN2309
Text: RN2307~RN2309 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2307,RN2308,RN2309 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN2307
RN2309
RN2308
RN1307
RN1309
RN2307
RN2308
RN1309
RN2309
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RN1207
Abstract: RN1208 RN1209 RN2207 RN2208
Text: RN1207~RN1209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1207,RN1208,RN1209 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN1207
RN1209
RN1208
RN2207
RN2207
RN2208
RN1207
RN1209
RN2208
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RN2315
Abstract: RN2316 RN2317 RN2318 RN1314 RN1318 RN2314
Text: RN2314~RN2318 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2314,RN2315,RN2316,RN2317,RN2318 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN2314
RN2318
RN2315
RN2316
RN2317
RN1314
RN1318
RN2314
RN2318
RN1318
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diode gi 9021
Abstract: SRC1206
Text: SRC1206 Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process
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SRC1206
KSR-9021-000
diode gi 9021
SRC1206
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RA6 TRANSISTOR
Abstract: SRA2206S ra6 sot 23
Text: SRA2206S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process
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SRA2206S
OT-23
KSR-2043-000
-10mA,
-10mA
RA6 TRANSISTOR
SRA2206S
ra6 sot 23
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ic 4043
Abstract: MARKING R6 4043 SRC1206E
Text: SRC1206E Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process
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SRC1206E
OT-523
KSR-4043-000
ic 4043
MARKING R6
4043
SRC1206E
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SRA2210E
Abstract: No abstract text available
Text: SRA2210E Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2210E
OT-523
KSR-4030-001
-10mA,
SRA2210E
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4021
Abstract: SRC1205E equivalent transistor R5 MARKING R5
Text: SRC1205E Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1205E
OT-523
KSR-4021-000
4021
SRC1205E
equivalent transistor R5
MARKING R5
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SRC1210SF
Abstract: No abstract text available
Text: SRC1210SF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1210SF
OT-23F
KSR-2006-001
SRC1210SF
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SRC1207SF
Abstract: No abstract text available
Text: SRC1207SF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1207SF
OT-23F
KSR-2033-000
SRC1207SF
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SRA2207SF
Abstract: r22 transistor marking RA7
Text: SRA2207SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2207SF
OT-23F
KSR-2035-000
-10mA
-10mA,
SRA2207SF
r22 transistor
marking RA7
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IC 4020
Abstract: IC 4020 data sheet SRC1204E
Text: SRC1204E Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1204E
OT-523
KSR-4020-000
IC 4020
IC 4020 data sheet
SRC1204E
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