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    TRANSISTOR CE 014 Search Results

    TRANSISTOR CE 014 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CE 014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient


    Original     		PDF AUIRGS30B60K AUIRGSL30B60K O-262 AUIRGSL30B60Knsible

    IGBT 4000V

    Abstract: AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V
    Text: PD - 96334 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR AUIRGS30B60K AUIRGSL30B60K C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient


    Original     		PDF AUIRGS30B60K AUIRGSL30B60K O-262 IGBT 4000V AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V

    Step-Down

    Abstract: XC9235 XC9236 XC9237
    Text: XC9235/XC9236/XC9237 Series ETR0514-014 600mA Driver Tr. Built-In, Synchronous Step-Down DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9235/XC9236/XC9237 series is a group of synchronous-rectification type DC/DC converters with a built-in 0.42Ω


    Original     		PDF XC9235/XC9236/XC9237 ETR0514-014 600mA Step-Down XC9235 XC9236 XC9237

    FMBT3946DW

    Abstract: DS-231156 npn-pnp dual
    Text: Dual NPN +PNP Epitaxial Planar Transistor Formosa MS FMBT3946DW List List. 1 Package outline. 2


    Original     		PDF FMBT3946DW 1000hrs 15min 20sec 1000cycle 96hrs 1000hrs 10sec FMBT3946DW DS-231156 npn-pnp dual

    CPM2C MAD11 OMRON Operation Manual

    Abstract: CPM1A-MAD11 cs1w-cn226 MAD11 omron CPM2c-32EDT CPM1-CIF01 power supply circuit diagram omron sysmac cpm2a Omron cpm2a SUPPORT SOFTWARE CPM2A-60CDR-A OMRON CPM2A
    Text: CPM2A Specifications CPM2A General Specifications Item Supply pp y voltage g Operating p g voltage g range Power consumption p Inrush current External power supply AC power supplies only AC power DC power AC power DC power AC power DC power AC power DC power


    Original     		PDF AT28C256 CPM2C MAD11 OMRON Operation Manual CPM1A-MAD11 cs1w-cn226 MAD11 omron CPM2c-32EDT CPM1-CIF01 power supply circuit diagram omron sysmac cpm2a Omron cpm2a SUPPORT SOFTWARE CPM2A-60CDR-A OMRON CPM2A

    Transistor Equivalent list

    Abstract: No abstract text available
    Text: Formosa MS Dual NPN Epitaxial Planar Transistor FMBT2222ADW1 & FMBT2222ADW2 List List. 1 Package outline. 2


    Original     		PDF FMBT2222ADW1 FMBT2222ADW2 JESD22-A102 MIL-STD-750D METHOD-1051 METHOD-1056 1000hrs. METHOD-1038 Transistor Equivalent list

    SOT-363

    Abstract: No abstract text available
    Text: Dual NPN Transistor Formosa MS FMBT3904DW1 & FMBT3904DW2 List List. 1 Package outline. 2


    Original     		PDF FMBT3904DW1 FMBT3904DW2 1000hrs 15min 20sec 1000cycle 96hrs 1000hrs SOT-363

    PLC programming temperature control omron

    Abstract: OMRON CPM2A
    Text: Y201-EN2-03.book Seite 86 Donnerstag, 30. März 2006 1:52 13 Compact PLC series CPM2C A versatile controller for up to 192 I/O points in an ultra-compact package SYSMAC CPM2C An extensive range of models assures efficient machine control in an ultracompact package. CPU Units DC


    Original     		PDF Y201-EN2-03 omron247 P06E-EN-03A. PLC programming temperature control omron OMRON CPM2A

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,


    OCR Scan     		PDF IRG4BC20K SS45S

    Untitled

    Abstract: No abstract text available
    Text: SEME LAB 37E LTD JUL 0 6 1988 0133107 ]> SEMELAB BUW89 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation MECHANICAL DATA D im ensions in mm FEATU RES • L O W V ce sat


    OCR Scan     		PDF BUW89 0-25mH 0-25m D02D5

    Untitled

    Abstract: No abstract text available
    Text: PD -91734 International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d for m otor control, tsc =10 as, @ 3 6 0 V V CE (start , T j = 1 2 5 °C ,


    OCR Scan     		PDF IRG4BC10KD

    IRG4BC10KD

    Abstract: No abstract text available
    Text: PD -91 73 4A International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d fo r m otor control, tsC = 1 0 js, @ 3 6 0 V V CE (start , T j = 125°C,


    OCR Scan     		PDF IRG4BC10KD IRG4BC10KD

    RCA-CA3018

    Abstract: RCA-CA3083 ICAN-5296 ICAN5296 CA3083 "rca application note" rca ican5296 24 "transistor array" rca transistor RCA Solid State Power Transistor
    Text: G E SOLID STATE Gl D E I 3 0 7 5 0 0 1 □□mt.Dt. 3 | - r» •— CA3083 General-Purpose High-Current N-P-N Transistor Array Features: ■ High /&’ 100 mA max. ■ Low l/cE*at a/ 50 mA : 0.7V max. n M atched p a ir (Q1 and 02) Vio (Vbe matched): ± 5 mV max.


    OCR Scan     		PDF 0014b0b CA3083 RCA-CA3083 100mA) 9ZCS-I7768 11qVS RCA-CA3018 ICAN-5296 ICAN5296 CA3083 "rca application note" rca ican5296 24 "transistor array" rca transistor RCA Solid State Power Transistor

    BLX91CB

    Abstract: IEC134 transistor 3609 amperex vc 100
    Text: N AMER P H I L I P S / D ISC RETE ObE_ I> Ü 1^53 ^31 0 01404 t, b • 0800130 AMPEREX, HICKSVILLE _ 86D 01808 D 'T ~ 3 3 - ô $ II BLX91CB SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video


    OCR Scan     		PDF oq14g4b blx91cb OT-48/3. BLX91CB IEC134 transistor 3609 amperex vc 100

    TRansistor 648

    Abstract: power factor PIC circuit transistor bd646 BD646 lco8a LCO 8A BD650 LE17 BD645 BD649
    Text: MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Adm in telephone: 01455 552505 Fax: 01455 558843 FS » 2 3 » BD646; 648 BD650; 652 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic D arlin gton c irc u it fo r audio o u tp u t stages and general


    OCR Scan     		PDF BD646; BD650; T0-220 BD645, BD647, BD649 BD651. BD646 Junc650; 7Z67332 TRansistor 648 power factor PIC circuit transistor bd646 lco8a LCO 8A BD650 LE17 BD645

    749 MOSFET TRANSISTOR motorola

    Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
    Text: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly


    OCR Scan     		PDF MAX749 -100V 500kHz) 1178mm) 749 MOSFET TRANSISTOR motorola 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA

    MAX749CPA

    Abstract: No abstract text available
    Text: 19-0143: Rev 1:2/9 5 > i/ iy j x i> k i D i g i t a l l y A d j u s t a b l e LCD Bi as S u p p l y _G e n e r a l D e s c r i p t i o n ♦ +2.0V to +6.0V Input Voltage Range A unique current-lim ited control schem e reduces supply current and maximizes efficiency, while a high switching


    OCR Scan     		PDF AX749 MAX749CPA

    2N2657

    Abstract: 2N2658 PG1150 PG1151 PG1152 PG1153 PG1154 PG1155 PG1156 Sprague Electric
    Text: 0043592 A P F E L E C T R O N IC S .2 A .0149,., D IN C - * :A P I ELECTRONICS INC 20^ DE 1 0 0 4 3 S T 2 00D014Ì 4 'J1-' INTERIM BULLETIN: Subject to Revision Without Notice -, . - 1 •* r- -*í - -.-APRIL 15,1971 POWER TRANSISTOR ^ ENGINEERING BULLETIN


    OCR Scan     		PDF 0043ST2 DDDD141 PG1150 PG1156, 2N2657 PG1151 PG1154 10MHz 300ms; 2N2658 PG1152 PG1153 PG1154 PG1155 PG1156 Sprague Electric

    C1061 npn

    Abstract: transistor c834 Transistor C1061 C1061 equivalent C1061 transistor C834 transistor NPN Transistor C1061 o transistor C834 C1061 c834 ao
    Text: GENL INSTRn OPTOELEK SS INSTR, OPTOELEK GENERAL INSTRUMENT 88D m im e -= 6.861.270) 6.35 .250) []J <0 $ 1 9.65 (.380) 0.36 (.014) 0.20 (.000 ) i "T MCT6 <20%) M CT 62 (100%) MCT61 (50%) MCT66 (6%) The MCT6X op toisolato rs have tw o channels for high density applications. For fo u r channel


    OCR Scan     		PDF MCT62 IVICT66 C2091 16-pin C1061 C1061 npn transistor c834 Transistor C1061 C1061 equivalent C1061 transistor C834 transistor NPN Transistor C1061 o transistor C834 C1061 c834 ao

    MCT2E equivalent

    Abstract: c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079
    Text: ~ûfl GENL INSTR t OPTOELEK DE 1 30=10150 □ □05'ibl l» T ~ PT"HI'B3 « G E N E R A I! iWRlSMEISTR MCT2E DESCRIPTION PACKAGE DIMENSIONS db f t f t I 6.86 .270 ^ 6.35 (.250) 0.36 (.014) I 0.20 (.008) 7.62 (.300) REF 8.38 (.330) 2Æ4(.100)TYP-*j 15° MAX


    OCR Scan     		PDF C2090 C2079 MCT2E equivalent c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079

    transistor IR 840

    Abstract: TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554
    Text: Philips Semiconductors 711005b 0Qb312? 014 IPHIN Product specification BLV193 UHF power transistor PHILIPS INTERN ATI ON AL FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION


    OCR Scan     		PDF 711005b 0Qb312? BLV193 OT171 PINNING-SOT171 VBA451 transistor IR 840 TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554

    MRC014

    Abstract: MRC012 MRC020 BFS505 MRC015
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 PINNING FEATURES • Low curren t consum ption PIN DESCRIPTION • High pow er gain Code: NO • Low noise figure 1 base • High transition frequency 2 em itter • Gold m etallization ensures


    OCR Scan     		PDF BFS505 OT323 MBC870 OT323. OT323 SC-70 MRC014 MRC012 MRC020 BFS505 MRC015

    749 MOSFET TRANSISTOR motorola

    Abstract: MAX749CPA
    Text: 19-0143; Rev 1; 2/95 D igitally Adjustable LCD Bias Supply A unique current-limited control scheme reduces supply current and maximizes efficiency, while a high switching frequency up to 500kHz minimizes the size of external components. Quiescent current is only 60|jA max and is


    OCR Scan     		PDF 500kHz) MAX749 DD1S347 749 MOSFET TRANSISTOR motorola MAX749CPA

    2N2657

    Abstract: 2N2658 HA 1156 R PG1150 PG1151 PG1152 PG1153 PG1154 PG1155 PG1156
    Text: 0043592 A P F E L E CT RON IC S 2ÖA TNC' ÿ f ; A P I ELECTRONICS INC "e g 0 ^ 0 0 4 3 5 ^ 2 D D D Q 1 4 Ì >4 .0149 ., I IN TE R IM B U LLE TIN : - S u b j e c t to R e v is io n - ; 1 - W it h o u t N o tic e - A P R IL 15, 1971 • ' \ • POWER TRANSISTOR '


    OCR Scan     		PDF QQ43592 PG1150 PG1156, 2N2657 2N2658 HA 1156 R PG1151 PG1152 PG1153 PG1154 PG1155 PG1156