UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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schematic diagram analog tv tuner rca
Abstract: dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017
Text: ORDER NO.DSD0503040C2 DVD Video Recorder DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG Vol.1 Colour K .Black Type (S).Silver Type 2005 Matsushita Electric Industrial CO., Ltd. All rights reserved. Unauthorized copying and
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DSD0503040C2
DMR-EH50EB
DMR-EH50EG
DMR-EH50EP
DMR-EH52EG
schematic diagram analog tv tuner rca
dsc r3918
IC3001
jvc hdd motor
c1507 transistor
B0ACCK000005
c4060 transistor
B3RAD0000092
C1518 transistor
C0DACZH00017
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Untitled
Abstract: No abstract text available
Text: Advanced Data Sheet SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-4089
SBA-4089
1950MHz
EDS-102822
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Untitled
Abstract: No abstract text available
Text: SBA4089Z SBA4089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA4089Z
OT-89
SBA4089Z
DS111204
SBA-4089
SBA-4089Z
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BA5 marking
Abstract: SBA-5089 marking ba5 BA5 Amplifier class d rf power amplifier
Text: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5089
SBA-5089
1950MHz
EDS-102743
BA5 marking
marking ba5
BA5 Amplifier
class d rf power amplifier
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SBA-5089
Abstract: No abstract text available
Text: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5089
SBA-5089
EDS-102743
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Untitled
Abstract: No abstract text available
Text: SBA5089Z SBA5089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA5089Z
OT-89
SBA5089Z
DS111204
SBA-5089Z
SBA-5089
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SBA-5089Z
Abstract: sba5089z
Text: SBA5089Z SBA5089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA5089Z
OT-89
SBA5089Z
DS111204
SBA-5089
SBA-5089Z
SBA-5089Z
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sba4089z
Abstract: sba-4089z
Text: SBA4089Z SBA4089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA4089Z
OT-89
SBA4089Z
DS111204
SBA-4089
SBA-4089Z
sba-4089z
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SBA-4089
Abstract: S1-101 BA433 ba4 transistor
Text: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4089
SBA-4089
1950MHz
EDS-102822
S1-101
BA433
ba4 transistor
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BA5 Amplifier
Abstract: GSM/BA5 Amplifier marking ba5 class d rf power amplifier
Text: Advanced Data Sheet SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-5089
SBA-5089
EDS-102743
BA5 Amplifier
GSM/BA5 Amplifier
marking ba5
class d rf power amplifier
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Untitled
Abstract: No abstract text available
Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-4089
OT-89
areBA-4089
SBA4089â
SBA4089Zâ
SBA-4089Z
SBA-4089
EDS-102822
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BA4Z
Abstract: sba4089 SBA-4089 sba-4089z InP transistor HEMT sot 163 Package
Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-4089
OT-89
Matching-5570
SBA4089"
SBA4089Z"
SBA-4089Z
SBA-4089
BA4Z
sba4089
sba-4089z
InP transistor HEMT
sot 163 Package
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BA5Z
Abstract: BA5 marking marking ba5 sba5089 SBA-5089 sba-5089z MMIC "SOT89" marking CODE h marking sba marking code ba5
Text: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5089
OT-89
Matching5570
SBA5089"
SBA5089Z"
SBA-5089Z
SBA-5089
BA5Z
BA5 marking
marking ba5
sba5089
sba-5089z
MMIC "SOT89" marking CODE h
marking sba
marking code ba5
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LBC7
Abstract: BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st 7to30V LBC7 RONA free transistor e2p
Text: Ultra-low On-Resistance LDMOS Implementation in 0.13 m CD and BiCD Process Technologies for Analog Power IC's Koji Shirai, Koji Yonemura, Kiminori Watanabe, Koji Kimura System LSI Division, Toshiba Semiconductor Company, 2-5-1 Kasama, Sakae, Yokohama, Kanagawa/Japan,
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7to30V
LBC7
BiCD 0.13
BCD8
0.18um LDMOS
BCD8* riccardi
cd013
BCD8 st
LBC7 RONA
free transistor e2p
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TRANSISTOR REPLACEMENT GUIDE
Abstract: CHIP capacitor cross reference panasonic transistor cross array resistor bourns CD1005 KOA Chip Resistors Packaging rohm cross TVS diode micro MELF Bourns resistors CD1005-B00340
Text: Networks Application Note Designer’s Guide to Chip Resistors, Chip Diodes, & Power Chokes For Power Supplies & DC-DC Converters Industry: Telecommunication, Computer, Industrial, Automotive Application: DC-DC Converters in Power Supplies Statement of the Problem:
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e/N0406
TRANSISTOR REPLACEMENT GUIDE
CHIP capacitor cross reference
panasonic transistor cross
array resistor bourns
CD1005
KOA Chip Resistors Packaging
rohm cross
TVS diode micro MELF
Bourns resistors
CD1005-B00340
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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TRANSISTOR 2N 4401
Abstract: transistor 4400 4401 transistor 2N4400 2N4401 4401 NPN 4401 transistor transistor 2n transistor 4401
Text: HN/2N 4400/4401 NPN EPITAXIAL SILICON TRANSISTOR General purpose transistor Collector Emitter Voltage: VCE0 = 40V Collector Dissipation: Pc max = 625mW On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92
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625mW
TRANSISTOR 2N 4401
transistor 4400
4401 transistor
2N4400
2N4401
4401
NPN 4401 transistor
transistor 2n
transistor 4401
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marking code 439
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN 1 • Self-aligned process entirely ion implanted
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OT440A
LTE21025R
OT44QA
marking code 439
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darlington optocoupler cross reference
Abstract: sot229 OPTOCOUPLER dc 4N46 optocoupler LP 250 OPTOCOUPLER dc 1ma optocoupler NPN
Text: D E V E L O P M E N T DATA • bfaS3*131 o a a i n s _ 3 ■ 11 T h is data sheet contain* advance Inform ation and specifications are subject to change w ith o u t n o tice. 4N46 I I N AMER P H I L I P S / D I S C R E T E
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OT229
T-41-85
tr-tf-16iw
darlington optocoupler cross reference
sot229
OPTOCOUPLER dc
4N46
optocoupler LP 250
OPTOCOUPLER dc 1ma
optocoupler NPN
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stepping motor EPSON EM - 234
Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system
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RS232
RS232C
stepping motor EPSON EM - 234
EPSON motor em 402
induction cooker fault finding diagrams
ECG transistor replacement guide book free
stepping motor EPSON EM 234
stepping motor EPSON em 331
S576B
transistor d389
maranyl
TMS1601A
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vqe 24 e
Abstract: bt 1840 vqe 24 d vqe 14 E MHPM7A12A120A VQE 24 AE 1600-S LP12A sc 8256 diode e4f
Text: MOTOROLA Order this documents by MHPM7A12A120A/D SEMICONDUCTOR TECHNICAL DATA H y b rid P o w e r M o d u le MHPM7A12A120A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10S120DC3)
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MHPM7A12A120A/D
MHPM7A10S120DC3)
b3b72SS
G1GG204
vqe 24 e
bt 1840
vqe 24 d
vqe 14 E
MHPM7A12A120A
VQE 24
AE 1600-S
LP12A
sc 8256
diode e4f
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