TRANSISTOR CC 11 A Search Results

TRANSISTOR CC 11 A Result Highlights (5)

Part	Manufacturer	Description
LBEE5XV2BZ-883	Murata Manufacturing Co Ltd	Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification)
LBEE5ZZ2XS-846	Murata Manufacturing Co Ltd	Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification)
UPA2754GR-E1-A	Renesas Electronics Corporation	Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8
UPA2706GR(0)-E1-A	Renesas Electronics Corporation	Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8
UPA2706GR-E1-AT	Renesas Electronics Corporation	Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8

TRANSISTOR CC 11 A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
cc1017 Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-24 • lc Collector c u rre n t. 50A • V cex • Hfe Collector-em itter vo lta g e . 1200V DC current g a in . 75	OCR Scan	QM50DY-24 E80276 E80271 cc1017	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS	OCR Scan	BUT34/D BUT34 BUT34 97A-05 O-204AE	PDF
876A Abstract: IR TRANSISTOR Text: Optolink Ltd Optical Switches ChanetorM te ic o n Tm I 1f CondWont V cm As ) Shown R L -0 mA Unft Ic O F F IO N \| 1OFF V C * K i) V I (tod) V c* A t Shown H -0 H i 20mA S 1- lit Ic As Shown II As Shown nA V V V MS mA V <•*> bV tv coo •CO Ic GAP Output	OCR Scan	H21A1 H21A2 B13S3 813S5 813S7 H21B1 H21B2 H21B3 H22A1 100gA 876A IR TRANSISTOR	PDF
rt2528 Abstract: DIODE BA159 transistor buv 90 zener diode 1n400 2018a40 2018a ZENER 1N4 Datasheet TEA2019 BYW98-50 TEA2018A Text: APPLICATION NOTE TEA2018A - TEA2019 FLYBACK SWITCH MODE POWER SUPPLY IMPLEMENTATION BY J-Y. COUET & T. PIERRE SUMMARY Page I INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II III	Original	TEA2018A TEA2019 TEA2018A. 018A-68 rt2528 DIODE BA159 transistor buv 90 zener diode 1n400 2018a40 2018a ZENER 1N4 Datasheet BYW98-50	PDF
MB74HC04 Abstract: MB74HC MB3769 f16015 MB74 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed com paratorto construct very high speed switching	OCR Scan	DS04-27202-3E MB3769A MB3769A 16-PIN DIP-16P-M04) MB74HC04 MB74HC MB3769 f16015 MB74	PDF
ND transistor Abstract: 74ls04 LED Light circuits diagram CIRCUIT DIAGRAM OF LED LOAD DRIVEN BY TOTEM POLE FOR COMMON CATHODE CONNECTION transistor 2N2222 SMD Infineon 80C167 74ls04 LED Light circuits 80C167* microcontroller 74LS04 truth table Difference between LS, HC, HCT devices Q12N2222 Text: High Speed/Logic Gate Optocoupler SFH67XX Series Appnote 73 1. Introduction The new SFH67XX series of high speed optocoupler is capable of transmitting data rates up to 5 Mb/s typically and 2.5 Mb/s over full temperature range (guaranteed). The combination of low input current (1.6 mA) and active logic	Original	SFH67XX SFH6700/19 SFH6705 74HCT04* MAX525 SFH6701/11 74HCT04 ND transistor 74ls04 LED Light circuits diagram CIRCUIT DIAGRAM OF LED LOAD DRIVEN BY TOTEM POLE FOR COMMON CATHODE CONNECTION transistor 2N2222 SMD Infineon 80C167 74ls04 LED Light circuits 80C167* microcontroller 74LS04 truth table Difference between LS, HC, HCT devices Q12N2222	PDF
MJE 2160 N Abstract: power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050 Text: LESHAN RADIO COMPANY, LTD. Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter	Original	MDC5001T1 OT-363 MDC5000 MDC5001T MJE 2160 N power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050	PDF
MJE 2160 N Abstract: 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1 Text: Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter	Original	MDC5001T1 OT-363 MDC5000 MDC5001T MJE 2160 N 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1	PDF
SiC mitsubishi Abstract: VC90 Text: MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM100CY-H • lc • Vcex Collector c u rre n t. 100A • hFE DC current g a in . 75 Collector-em itter v o lta g e . 600V	OCR Scan	QM100CY-H E80276 E80271 SiC mitsubishi VC90	PDF
Untitled Abstract: No abstract text available Text: ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed com paratorto constructvery high speed switching	OCR Scan	MB3769A MB3769A D-63303 F9803	PDF
62003F Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852 Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r \|Tra n s i st o r\| TD62 xxx rray\| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F	OCR Scan	40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852	PDF
Untitled Abstract: No abstract text available Text: / M ik o m an A M P com pany Radar Pulsed Power Transistor, 11W, 1^s Pulse, 10% Duty 3.1-3.4 GHz PH3134-11S V2 00 9^0 c?U 8J> Features ,5/J • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ra tio n	OCR Scan	PH3134-11S ATC100A	PDF
1461 transistor Abstract: 1461 TELEDYNE 1461 Text: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output	OCR Scan		PDF
tea2261 Abstract: TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV Text: TEA2261/0 SWITCH MODE POWER SUPPLY CONTROLLER Positive and Negative Current up to 1.2A and 2A • Low Start-Up Current ■ Direct Drive of the Power Transistor ■ Two Levels Transistor Current Limitation ■ Double Pulse Suppression ■ Soft-Starting ■ Under and Overvoltage Lock-out	Original	TEA2261/0 TEA2260/61 tea2261 TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV	PDF

Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk	OCR Scan	BUL44D2/D BUL44D2 21A-06 O-220AB	PDF
ic 7912 Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352 Text: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,	Original	D-81541 BGB550 10max ic 7912 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 SCT595 TRANSISTOR C 557 B transistor K 1352	PDF
Untitled Abstract: No abstract text available Text: SÌ9976DY N-Channel Half-Bridge Driver Features Applications • • • • • • • • • • • • • • Single Input for High-Side and Low-Side MOSFETs 20- to 40-V Supply Static dc Operation Cross-Conduction Protected Undervoltage Lockout ESD and Short Circuit Protected	OCR Scan	9976DY Si9976DY S-56293-- 02-Mar-98	PDF
IBM43RF0100 Abstract: transistor K 1413 Text: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin = 1 ,1dB @ 2 .0G H z • Low Operating Voltage • Input MP3 Capability: = + 10dBm @ 2.0G Hz, • Package: SO T353 VCc = 3V. lc=5mA Description The IB M 43R F0100 is a Silicon-Germanium SiGe	OCR Scan	IBM43RF0100 10dBm F0100 transistor K 1413	PDF
transistor JE 1090 Abstract: photodiode for CD rw Text: W fip l H E W L E T T m Lftm P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject	OCR Scan	HBCS-1100 transistor JE 1090 photodiode for CD rw	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.	OCR Scan	MJ16110/D J16110* 340F-03 O-247AE	PDF
MJ16010 Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010 Text: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in	OCR Scan	MJ16010/D MJ16012 MJW16012 MJ16010 MJW16010 340F-03 O-247AE bi 370 transistor ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS	OCR Scan	MJE18206/D JF18206 MJE/MJF18206 221D-02 E69369	PDF
Untitled Abstract: No abstract text available Text: TA8461F T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8461F DUAL POWER OPERATIONAL AMPLIFIER The TA8461F is a multiple chip IC consisting of 4 saturated voltage discrete transistors and 1 dual operational amplifier. FEATURES • Large Output Current	OCR Scan	TA8461F TA8461F SSOP24 OUT22 OUT12 SSOP24-P-300-1	PDF
SN55450 Abstract: SN55450B transistor D2217 SS451 transistor 1yc SN754S1B d2217 Text: T E X A S I N S T R -CLIN/INTFC} 8961724 TEXAS IN STR S F § 0^:1.754 0D7SflSD h LIN /IN T F C 91D 75850 D SN55450B THRU SNS5454B SN75451B THRU SN75454B DUAL PERIPHERAL DRIVERS D2217, DECEMBER 1976-REVISED SEPTEMBER 1986 SN55450B . . . J PACKAGE (TOP VIEW)	OCR Scan	SN55450B SNS5454B SN75451B SN75454B D2217, 1976-REVISED SN55450B SN55450 transistor D2217 SS451 transistor 1yc SN754S1B d2217	PDF

TRANSISTOR CC 11 A Search Results

TRANSISTOR CC 11 A Result Highlights (5)

TRANSISTOR CC 11 A Datasheets Context Search

cc1017

Untitled

876A

rt2528

MB74HC04

ND transistor

MJE 2160 N

MJE 2160 N

SiC mitsubishi

Untitled

62003F

Untitled

1461 transistor

tea2261

Untitled

ic 7912

Untitled

IBM43RF0100

transistor JE 1090

Untitled

MJ16010

Untitled

Untitled

SN55450