TRANSISTOR CB 180 Search Results

2N5551C

Abstract: SAT12
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage. : VCbo=180V, VCeo=160V • Low Leakage Current. : I CB O = 5 0 n A Max. V Cb=120V

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N5551C

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage. : VCbo=180V, VCeo=160V • Low Leakage Current. : ICBo=50nA Max. V Cb=120V • Low Saturation Voltage.

2SC4272

Abstract: ITR06606 ITR06607 ITR06608 ITR06611
Contextual Info: 2SC4272 Ordering number : EN2970A SANYO Semiconductors DATA SHEET 2SC4272 NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications Features • Small size making it easy to provide high-density, small-sized hybrid ICs. Specifications

2SC2314

Abstract: transistor 2sc2314 2sc2314 transistor DSA0027023
Contextual Info: Ordering number:EN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C

2N5551S

Abstract: sot23 transistor marking ZF
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO LTD 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM • High Collector Breakdwon Voltage : V Cbo=180V, V Ceo=160V • Low Leakage Current. : ICBo=50nA Max. V cb=120V

CD965

Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package E CB For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

2SC4272

Abstract: ITR06606 ITR06607 ITR06608 ITR06609 ITR06610 ITR06611
Contextual Info: Ordering number:ENN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 0.4 1.0

2SC4272

Abstract: EN2970
Contextual Info: Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 2.5 1.0

CD965

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package E CB For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

CC8050

Abstract: CSC945 CSA733
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC945 CC8050 TO-92 Plastic Package E CB Audio Frequency General Purpose and Driver Stage Amplifier Application Complmentary CSA733

2SC4132

Abstract: T100 sc-62 package oc sc62
Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SC4132; CB-A-, where ★ is hFE code high breakdown voltage BVqeo = 120 V high transition frequency (fT) low output capacitance (Cob)

CSB1426

Abstract: 150405E
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB1426 TO-92 Plastic Package E CB Low Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package E CB For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

Contextual Info: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.

2SC4735

Abstract: 2084B
Contextual Info: Ordering number:EN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.

EC12T

Abstract: 2SC4735 ITR07494 ITR07495 ITR07496 ITR07497
Contextual Info: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC5607 TO-92 Plastic Package E CB DC/DC Converter Applications ABSOLUTE MAXIMUM RATINGS SYMBOL VCBO VALUE

Contextual Info: KSC3569 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cb O Symbol 50 0 V Collector Emitter Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB1426 TO-92 Plastic Package E CB Low Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2SC2314

Abstract: 2sc2314F ITR05122 ITR05118 ITR05119 ITR05120 ITR05121 2sc2314 transistor
Contextual Info: Ordering number:ENN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8 0.8 0.6 15.5 0.5 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE T O -2 2 0 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cB O -1 0 0 Collector-Emitter Voltage

CC8050

Abstract: CSA733 CSC945
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC945 CC8050 TO-92 Plastic Package E CB Audio Frequency General Purpose and Driver Stage Amplifier Application Complmentary CSA733 ABSOLUTE MAXIMUM RATINGS Ta=25ºC

2SB1275

Abstract: 2SB1236A 2SD1918
Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor -1 6 0 V , - 1 .5A 2SB127512SB1236A •Features 1) High breakdown voltage.(BVcEO = -1 60V) 2) Low collector output capacitance. (Typ. 30pF at V cb = 10V) 3) High transition frequency.(fr = 50MHz) 4) Complements the 2SD1918/2SD1857A.