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    TRANSISTOR C5122 Search Results

    TRANSISTOR C5122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    Catalog Datasheet Type Document Tags PDF

    C5122 TRANSISTOR

    Abstract: C5122 2SC5122 transistor c5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SC5122 O-92MOD C5122 TRANSISTOR C5122 2SC5122 transistor c5122 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)


    Original     		2SC5122 O-92MOD PDF

    C5122 TRANSISTOR

    Abstract: transistor c5122 2SC5122 C5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC5122 C5122 TRANSISTOR transistor c5122 2SC5122 C5122 PDF

    C5122 TRANSISTOR

    Abstract: C5122 2SC5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • • Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC5122 O-92MODlled C5122 TRANSISTOR C5122 2SC5122 PDF

    C5122 TRANSISTOR

    Abstract: 2SC5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC5122 O-92MOD C5122 TRANSISTOR 2SC5122 PDF

    calculation of line diSTANCE relay REL 670

    Abstract: siemens EN 60947 VDE 0660 IEC 947 Siemens KTY 84 PTC UMC100-FBP pt1000 thermistor curve 1svr450071r0000 1SVR450065R0000 Siemens kty84 temperature sensor 1SVR430811R1300 1SAR477000R0100
    Text:  Measuring and monitoring relays CM and C5xx range 2 Content Benefits and advantages . 2/ 2 Monitoring features and application ranges . 2/ 4


    Original     		F0206 F0b06 2CDC110004C0207 calculation of line diSTANCE relay REL 670 siemens EN 60947 VDE 0660 IEC 947 Siemens KTY 84 PTC UMC100-FBP pt1000 thermistor curve 1svr450071r0000 1SVR450065R0000 Siemens kty84 temperature sensor 1SVR430811R1300 1SAR477000R0100 PDF