TRANSISTOR C3E Search Results

RF POWER TRANSISTOR 100MHz

Abstract: uhf vhf amplifier Transistor C3E CMPTH10 rf amplifier 10mhz MARKING CODE C3E
Contextual Info: Central TM Semiconductor Corp. CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and

Transistor C3E

Abstract: MARKING CODE C3E CMPTH10 Low Noise uhf transistor marking code RB marking C3E uhf vhf amplifier marking code C3E SOT-89
Contextual Info: Central CMPTH10 TM Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and

MARKING CODE CCB

Abstract: Transistor C3E
Contextual Info: Central CMPTH10 TM Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and

Transistor C3E

Abstract: sot 23 transistor marking w 26 RF Amplifier marking 420 marking code LE SOT 23 MARKING CODE C3E marking code C3E SOT-89
Contextual Info: Central“ CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output

transistor marking code 443

Abstract: Transistor C3E marking code C3E SOT-89 MARKING CODE C3E
Contextual Info: Central“ CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output

Contextual Info: Central TM Sem i c o n d u c t o r C o r p . CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R CMPTHIOtypeis an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Transistor C3E

Abstract: RF TRANSISTOR CMPTH10 MARKING CODE C3E marking code R5 sot23
Contextual Info: CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF

transistor b35

Abstract: marking code b35 b35 sot23 uhf vhf amplifier bo 913 sot-23 npn marking code cr CMPTH10 Transistor C3E MARKING CODE C3E MARKING CODE B35 SOT
Contextual Info: Central" CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The C E N TR A L S E M IC O N D U C TO R CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and

Contextual Info: central Sem iconductor Corp. CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CM PTH 10 type is an NPN silicon R F transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and

Contextual Info: International TSR Rectifier PD - 9.1461D IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Transistor C3E

Abstract: 10J-iA marking code C3E SOT-89
Contextual Info: Central" Semiconductor Corp. CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF tra n sisto r manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and

2SD1896

Contextual Info: h -7 > v ^ $ /Transistors 2SD1896 9 S D 1 8 9 6 • W ^ w Triple Diffused Planar NPN Silicon Transistor ijS îA tS ^ jitiÜ Æ I/L o w Freq. Power Amp. • • ^ ffi'+ jiH /'D im e n s io n s Unit : mm 1) V ce (sat) rt'-fé'-'o VcE(sat)=0.3V(Typ.) (IC/IB=3A/0.3A)

Contextual Info: C3EIMIMUM C O R P O R A T I O High Gain Class A Amplifier N 505 LC505/LD505 DATA SHEET FEATURES DESCRIPTION • 71 dB of gain with 1.3 V supply The LC/LD505 are low voltage, linear monolithic integrated amplifiers with a typical electrical gain of 71 dS. The circuits

Contextual Info: I II C3EIMIMUM ^flullr C O R P O R A T I Low Voltage - Low Power Operational Amplifier LC810 O N PRELIMINARY DATA SHEET DESCRIPTION FEATURES • low voltage design - operates down to1.0 V total supply voltage • low power consumption - 200 pA typical quiescent supply current

transistor zc

Abstract: transistor zx series transistor C3 C3EX
Contextual Info: Cell-Based IC Crystal Oscillators Introduction Crystal Theory This Engineering Application Note EAN describes the use of the Crystal Oscillator parts in the ATMEL Libraries. The mechanical impedance of a crystal for one particular series resonant frequency k (the fundamental and its overtones) can be electrically modeled by a

Contextual Info: - Ì- J T C3EIMIMUM C O R P O R A T I O N G X 4 2 0 1 W ideband, Monolithic 1x1 Video Crosspoint Switch DATA SHEET FEATURES CIRCUIT DESCRIPTION T h e G X 4 2 0 1 is a w id e b a n d 1x1 v id e o c ro s s p o in t im p le m e n te d • -3 d B b a n d w id th , 3 0 0 M H z w ith C L = 0 pF

transistor k702

Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
Contextual Info: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.

basic ac motor reverse forward electrical diagram

Abstract: bi-directional switches IGBT Dynex Semiconductor ge traction motor DIM800ECM33-F000
Contextual Info: DIM800ECM33-F000 IGBT Chopper Module DS5815-1.1 April 2006 LN24543 FEATURES • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Soft Punch Through Silicon KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) • Isolated MMC Base-plate with AIN Substrate

DIM800ECM33-F000

Abstract: KW transistor
Contextual Info: DIM800ECM33-F000 IGBT Chopper Module DS5815-1.2 January 2009 LN26568 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V 800A

DIM800ECM33-F000

Contextual Info: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)*

L6281

Abstract: Stepper driver board with L297 L6203 circuit L6201P Stepper driver board with L297 L6203 L297 used for 24V/ 5A DC motor CI L297 L6203 L6203 H bridge IC L6202 L6506
Contextual Info: L6201 - L6201P L6202 - L6203 Æ 7 SG S-TH O M SO N ^ 7#. R!ôll ^©li[L[i ÏIS3©R!l] êi DMOS FULL BRIDGE DRIVER PRELIMINARY DATA . SUPPLY VOLTAGE UP TO 42V • 5A MAX PEAK CURRENT (2A max. for L6201 . TOTAL RMS CURRENT UP TO L6201:1 A; L6202:1.5A; L6203/L6201 P:4A

MARKING C3F

Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.

omron plc CPU 41 e rs232 pin configuration

Abstract: transistor f422 PYC35 RGB 5050 IP65
Contextual Info: Panel Builder Guide 2014 Components for panels and cabinets industrial.omron.eu Welcome to our world Our best-in-class devices for your panels and cabinets Welcome to Omron’s world of advanced industrial automation. The PANEL BUILDER GUIDE is your essential tool to pre-select

schematic diagram analog tv tuner rca

Abstract: dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017
Contextual Info: ORDER NO.DSD0503040C2 DVD Video Recorder DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG Vol.1 Colour K .Black Type (S).Silver Type 2005 Matsushita Electric Industrial CO., Ltd. All rights reserved. Unauthorized copying and