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    TRANSISTOR C3865 Search Results

    TRANSISTOR C3865 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    transistor C3865

    Abstract: C3865 OP777 low noise transistors 2N2222 OP07 OP777AR OP777ARM 2N2222 pinout 15v 101k
    Text: a FEATURES Low Offset Voltage: 100 ␮V Max Low Input Bias Current: 10 nA Max Single-Supply Operation: 2.7 V to 30 V Dual-Supply Operation: ؎1.35 V to ؎15 V Low Supply Current: 270 ␮A/Amp Unity Gain Stable No Phase Reversal APPLICATIONS Precision Current Measurement


    Original     		PDF OP777 OP777 micropo1968 2N2222 transistor C3865 C3865 low noise transistors 2N2222 OP07 OP777AR OP777ARM 2N2222 pinout 15v 101k