TRANSISTOR C32 Search Results

TRANSISTOR C32 Result Highlights (5)

Part	Manufacturer	Description
2SB1115(0)-T1-AY	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SA952-T-A	Renesas Electronics Corporation	Bipolar Power Transistors
2SD1000(0)-T1-AZ	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SC4000-T-AZ	Renesas Electronics Corporation	Bipolar Power Transistors
2SA812(0)-T1B-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors

TRANSISTOR C32 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The	Original	BLP15M7160P	PDF
Untitled Abstract: No abstract text available Text: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The	Original	BLP15M7160P	PDF
BLF888 Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888 dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP	PDF
Untitled Abstract: No abstract text available Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 BLF888	PDF
BLF872 Abstract: ez90 rogers 5880 OFDM transmitter UHF EZ90-25-TP Text: BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from	Original	BLF872 BLF872 ez90 rogers 5880 OFDM transmitter UHF EZ90-25-TP	PDF
j3076 Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378 Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W	Original	BLF888 j3076 BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378	PDF
a1757 Abstract: A1797 Text: DISCRETE SEMICONDUCTORS DAT M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of 1998 Jul 29 2003 Sep 26 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 PIN CONFIGURATION FEATURES	Original	M3D091 BLF368 OT262A1 SCA75 613524/04/pp18 a1757 A1797	PDF
philips Trimmers 60 pf Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor	Original	BLF278 SC08a OT262A1 philips Trimmers 60 pf trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun	PDF
c38 transistor Abstract: capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor	Original	BLF378 SC08a OT262A1 c38 transistor capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor	PDF
2222 809 09006 capacitor Abstract: BLF278 philips ferroxcube 4c6 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor	Original	BLF278 SC08a OT262A1 2222 809 09006 capacitor BLF278 philips ferroxcube 4c6	PDF
A302 w3 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 PIN CONFIGURATION FEATURES	Original	M3D091 BLF248 OT262 SCA75 613524/03/pp16 A302 w3	PDF
MAR 544 MOSFET TRANSISTOR Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically	OCR Scan	4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor	PDF
atc 17-33 Abstract: class A push pull power amplifier class B push pull power amplifier philips catalog resistors RGS 13/1 U1 78L05 vhf linear amplifier BLF248 c4l7 SOT262 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF248 PIN CONFIGURATION	Original	M3D091 BLF248 OT262 SCA75 613524/03/pp16 atc 17-33 class A push pull power amplifier class B push pull power amplifier philips catalog resistors RGS 13/1 U1 78L05 vhf linear amplifier BLF248 c4l7 SOT262	PDF
BLF378 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF378 PINNING - SOT262A1	Original	M3D091 BLF378 OT262A1 SCA60 125108/00/03/pp16 BLF378	PDF

sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
c39 transistor Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,	Original	BLV950 SC08b OT262A2 SCDS47 127061/1100/02/pp16 c39 transistor transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37	PDF
C5750X7R1H106M Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751 Text: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20LS-75 ACPR400k ACPR600k BLF6G20LS-75 C5750X7R1H106M C3225X7R1H155M RF35 SM270 TRANSISTOR 751	PDF
EZ90-25-TP Abstract: transistor c9 ez90 BLF369 ez902 transistor 228 T3 ez9025tp Text: BLF369 VHF power LDMOS transistor Rev. 02 — 8 December 2006 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Table 1.	Original	BLF369 BLF369 EZ90-25-TP transistor c9 ez90 ez902 transistor 228 T3 ez9025tp	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.	Original	BLF8G20LS-260A	PDF
BLF8G20LS-260A Abstract: ATC800B blf8g20 X3C19 Text: BLF8G20LS-260A Power LDMOS transistor Rev. 1 — 13 September 2012 Objective data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.	Original	BLF8G20LS-260A BLF8G20LS-260A ATC800B blf8g20 X3C19	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26H160--4S4 AFT26H160-4S4R3	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 agere c8 Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8	PDF
C5750X7R1H106M Abstract: 30RF35 Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1.	Original	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35	PDF
BLF6G20 Abstract: BLF6G20-75 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752 Text: BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20-75; BLF6G20LS-75 ACPR400k ACPR600k BLF6G20-75 BLF6G20LS-75 BLF6G20 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752	PDF

TRANSISTOR C32 Search Results

TRANSISTOR C32 Result Highlights (5)

TRANSISTOR C32 Datasheets Context Search

Untitled

Untitled

BLF888

Untitled

BLF872

j3076

a1757

philips Trimmers 60 pf

c38 transistor

2222 809 09006 capacitor

A302 w3

MAR 544 MOSFET TRANSISTOR

atc 17-33

BLF378

sx3704

c39 transistor

C5750X7R1H106M

EZ90-25-TP

Untitled

BLF8G20LS-260A

Untitled

J307 FET

C5750X7R1H106M

BLF6G20