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    TRANSISTOR C2800 Search Results

    TRANSISTOR C2800 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C2800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


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    PDF UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5

    c2800 transistor

    Abstract: transistor c2800
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original
    PDF UCC2800/2801/2802/2803/2804/2805Q1 SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5 c2800 transistor transistor c2800

    Untitled

    Abstract: No abstract text available
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original
    PDF UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5

    Untitled

    Abstract: No abstract text available
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original
    PDF UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5

    C2804

    Abstract: transistor c2800
    Text: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0


    Original
    PDF UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5 C2804 transistor c2800

    Untitled

    Abstract: No abstract text available
    Text: UCC2800/2801/2802/2803/2804/2805-EP LOW-POWER BICMOS CURRENT-MODE PWM SGLS135F − SEPTEMBER 2002 − REVISED OCTOBER 2010 D Controlled Baseline D D D D D D D † D D D D − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of


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    PDF UCC2800/2801/2802/2803/2804/2805-EP SGLS135F

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


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    PDF element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


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    PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    Untitled

    Abstract: No abstract text available
    Text: PROGRAMMABLE SCHOTTKY 65536-B IT READ ONLY MEMORY M B7144E/H November 1988 Edition 4.0 SCHOTTKY 65,536-BIT DEAP PROM 8192 WORDS X 8 BITS The Fujitsu MB7144 is high speed schottky TTL electrically field programmable read only mem ory organized as 8192 words by 6 bits. With threestate outputs, memory


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    PDF 65536-B B7144E/H 536-BIT MB7144 24-pin 24-LEAD DIP-24C-C01) 24-pln FPT-24C-A02)

    MB7100

    Abstract: TAA 310A UD 1208 fujitsu 1988 MB710 100 10L AD
    Text: FUJITSU PROGRAMMABLE SCHOTTKY 65536-B IT READ ONLY MEMORY SCHOTTKY 65,536-BIT DEAP PROM 8192 WORDS X 8 BITS MB7144E/H November 1988 Edition 4.0 The Fujitsu M 87144 Is high speed schottky TTL electrically field program m able read only m em ory organized as 8192 words by 8 bits. With threestate outputs, memory


    OCR Scan
    PDF 65536-B MB7144E/H 536-BIT 24-LEAD F24010S-1C MB7144E/H C28002-SC MB7100 TAA 310A UD 1208 fujitsu 1988 MB710 100 10L AD

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU PROGRAMMABLE SCHOTTKY 8192-BIT READ ONLY MEMORY MB7132E-W MB7132L-W N ovem ber 1987 E d itio n 5.0 SCHOTTKY 8192-BIT DEAP PROM 1024 WORDS x 8 BITS The Fujitsu M B7132-W is high speed S ch o ttky T T L electrically field program ­ mable read o nly m em ory organized as 1024 w ords by 8 bits. W ith three-state


    OCR Scan
    PDF 8192-BIT MB7132E-W MB7132L-W 8192-BIT B7132-W 132-W 28-PAD LCC-28C-A01) 16JTYP I28PCLS)

    T5771

    Abstract: L4db
    Text: January 1992 Edition 1.0 FUJITSU DATA SHEET MB4752A SUBSCRIBER LINE INTERFACE 1C DESCRIPTION The Fujitsu M B 4752A is designed for PBX Private Branch Exchange , it has battery feed, supervision and 4 -w ire to 2 -w ire conversion functions. Battery Feed mode can be established to 2 0 0 & x 2, 440£2 x 2 constant feeding


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    PDF MB4752A AV0009-921J1 T5771 L4db

    MB7132E

    Abstract: b7131 mb7132 LSK Series MB7132Y
    Text: FUJITSU PROGRAMMABLE SCHOTTKY 8192-BIT READ ONLY MEMORY M B7131E/H/L M B7132E/H/Y/L MB7131E-SK/H-SK/L-SK M B7132E-SK/H -SK/Y-SK/L-SK I January 19B8 E d itio n 2.0 SCHOTTKY 8192-BIT DEAP PROM 1024 WORDS X 8 BITS The Fujitsu MB 7131 and MB 7132 are high speed sch ottky T T L electrically


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    PDF 8192-BIT B7131E/H/L B7132E/H/Y/L MB7131E-SK/H-SK/L-SK B7132E-SK/H B7132E/H B7131E-SK/H 132E-SK/H MB7132E b7131 mb7132 LSK Series MB7132Y

    mb7138

    Abstract: B7137 B7138 ta 7137 p
    Text: FU JITSU PROGRAMMABLE SCHOTTKY 16384-BIT READ ONLY MEMORY M B 7 1 3 7 E /H M B 7 1 3 8 E /H /Y M B 7 1 3 7 E .S K /H -S K M B 7 1 3 8 E -S K /H -S K /Y -S K Decem ber 198 7 E d itio n 2 .0 SCHOTTKY 16384-BIT DEAP PROM 2048 OWRDS X 8 BITS The Fujitsu MB7137 and M B7138 are high speed S ch o ttky T T L electrically


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    PDF 16384-BIT MB7137 B7138 B7137 B7138, 7137E 7138E 28-PAD mb7138 ta 7137 p

    B712 transistor

    Abstract: M8712 transistor b712 AL 1115 CV mb 3712 MB7128 mb7128e B7127
    Text: F U J IT S U MB7127E/H MB7128E/H/Y MB7127L MB7128L PROGRAMMABLE SCHOTTKY 8192-BIT READ ONLY MEMORY November 1987 Edition 2 .0 SCHOTTKY 8192-BIT DEAP PROM 2048 WORDS X 4 BITS The Fujitsu MB 7127 and MB 7128 are high speed sch ottky T T L electrically fie ld programmable read o n ly memories organized as 2048 words by 4 bits.


    OCR Scan
    PDF 8192-BIT MB7127E/H MB7128E/H/Y MB7127L MB7128L 7127L 7128L 28-PAD LCC-28C-A01) B712 transistor M8712 transistor b712 AL 1115 CV mb 3712 MB7128 mb7128e B7127

    MB7132E

    Abstract: MB7131E MB7132 7132E MB7132E-SK 2.t transistor
    Text: FU JITSU PROGRAMMABLE SCHOTTKY 8192-BIT READ ONLY MEMORY MB7131E/H/L MB7132E/H/Y/L MB7131E-SK/H-SK/L-SK MB7132E-SK/H-SK/Y-SK/L-SKI January 1988 Edition 2.0 SCHOTTKY 8192-BIT DEAP PROM 1024 WORDS X 8 BITS The Fujitsu MB 7131 and MB 7132 are high speed schottky T T L electrically


    OCR Scan
    PDF 8192-BIT MB7131E/H/L MB7132E/H/Y/L MB7131E-SK/H-SK/L-SK MB7132E-SK/H-SK/Y-SK/L-SKI 24-LE FPT-24C-A01) 127lgg B7132E/H MB7132E MB7131E MB7132 7132E MB7132E-SK 2.t transistor