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    TRANSISTOR C1C Search Results

    TRANSISTOR C1C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C1C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    BJT with i-v characteristics

    Abstract: 2N7000 spice transistor BS170* PMOS transistor 1gm 6 2N7000 TRANSISTOR mosfet amplifer circuit 1AV Series 10KHZ 2N7000 BS170
    Text: EE 320L Electronics I Laboratory Laboratory Exercise #8 MOS Transistor Characterization and Biasing Department of Electrical and Computer Engineering University of Nevada, at Las Vegas Objective: The objective of this lab is to introduce the student to the MOS transistor. This lab will


    Original     		PDF 2N7000 BJT with i-v characteristics 2N7000 spice transistor BS170* PMOS transistor 1gm 6 2N7000 TRANSISTOR mosfet amplifer circuit 1AV Series 10KHZ 2N7000 BS170

    transistor d261

    Abstract: D311 transistor M61516FP 7.1ch transistor D311 analog audio 3 input selector loudness control PIN23 QFP80-P-1420-0 d31 b
    Text: MITSUBISHI SOUND PROCESSOR ICs M61516FP 7.1ch ELECTRONIC VOLUME WITH 10 INPUT SELECTOR APPLICATION Receiver,AV Amp,Mini Stereo etc. FEATURE FUNCTION FEATURE Electronic Volume 1 8 channel Independent Electronic Volume with High Voltage Transistor. (0~-92dB/1dBstep,-95,- dB)


    Original     		PDF M61516FP -92dB/1dBstep 10dB/2dBstep 0/-3/-6/-9/-12dB 80P6N-A transistor d261 D311 transistor M61516FP 7.1ch transistor D311 analog audio 3 input selector loudness control PIN23 QFP80-P-1420-0 d31 b

    D9D TRANSISTOR

    Abstract: BEST BASS TREBLE CIRCUIT capacitor 4.7u M61531FP D19c D15C D14D D19D
    Text: Preliminary M61531FP 6ch Electronic Volume with 10 Input Selectors REJ03F0050-0110Z Rev.1.1 Jun.01.2004 Features Functions Features Electric volume 6 channel independent electric volume with high voltage transistor 0 to –99 dB/1 dB step, –∞ dB Input selector


    Original     		PDF M61531FP REJ03F0050-0110Z D9D TRANSISTOR BEST BASS TREBLE CIRCUIT capacitor 4.7u M61531FP D19c D15C D14D D19D

    MRF9002NR2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9002NR2 PFP-16 MRF9002NR2

    MRF9002NR2

    Abstract: RO4350 J104 J158
    Text: Document Number: MRF9002NR2 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9002NR2 PFP-16 MRF9002NR2 RO4350 J104 J158

    13.56mhz c class amp

    Abstract: ARF1519 100C ARF1518 ATC 100C 13.56MHZ mosfet Class B power amplifier, 13.56MHz 13.56Mhz class AB power amplifier
    Text: ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.


    Original     		PDF ARF1519 104T-100 25MHz ARF1519 13.56mhz c class amp 100C ARF1518 ATC 100C 13.56MHZ mosfet Class B power amplifier, 13.56MHz 13.56Mhz class AB power amplifier

    Untitled

    Abstract: No abstract text available
    Text: ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.


    Original     		PDF ARF1519 104T-100 25MHz ARF1519

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.


    Original     		PDF ARF1519 104T-100 25MHz ARF1519

    ON SEMICONDUCTOR J122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		PDF MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122

    J133 mosfet transistor

    Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		PDF MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133

    AN1370

    Abstract: AN-1370 LM5034 LM5034EVAL si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration
    Text: National Semiconductor Application Note 1370 Dennis Morgan February 2005 Introduction slope compensation, direct interface with opto-coupler transistor, and thermal shutdown. The LM5034EVAL evaluation board provides the power supply design engineer with a fully functional 200W dual interleaved DC-DC power switching regulator using forward/


    Original     		PDF LM5034EVAL LM5034 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. AN-1370 AN1370 AN-1370 si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration

    13.56mhz c class amp

    Abstract: ATC 100C 13.56Mhz class AB power amplifier 13.56MHZ mosfet N CHANNEL MOSFET 10A 1000V POWER MOSFET 4600 13.56Mhz rf amplifier 100C ARF1519 750w planar transistor
    Text: ARF1519 D ARF1519 BeO 104T-100 G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.


    Original     		PDF ARF1519 104T-100 25MHz ARF1519 13.56mhz c class amp ATC 100C 13.56Mhz class AB power amplifier 13.56MHZ mosfet N CHANNEL MOSFET 10A 1000V POWER MOSFET 4600 13.56Mhz rf amplifier 100C 750w planar transistor

    power transistor unit j122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9002NR2 MRF9002NR2 power transistor unit j122

    Untitled

    Abstract: No abstract text available
    Text: T'ìRTDTb DQ1SQS7 3=15 Ordering num ber: EN 3173 _ LB1740 No.3173 Monolithic Digital IC 8-Channel, Current-Source Output, Darlington Transistor Array The LB1740 is an 8-channel current source output Darlington transistor array made up of PNP transistors


    OCR Scan     		PDF LB1740 LB1740 500mA) N149TA 350mA

    2N5109 motorola

    Abstract: transistor 2N5109 c0851 2n5109
    Text: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good


    OCR Scan     		PDF 2N5109 abo2-46 2N5109 motorola transistor 2N5109 c0851 2n5109

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEM BER 1995 PARTMARKING DETAIL - FMMT495 O_ ~ 495 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V Collector-Emitter Voltage


    OCR Scan     		PDF FMMT495 250mA, 500mA, 500rriA, 300jis. 100MHz

    1N06CLE

    Abstract: zener diode 9CA transistor D 716
    Text: a RLP1N06CLE h a r r is January 1994 Voltage-Clamping Current-Limited ESD-Protected N~Channel Enhancement-Mode Power Field-Effect Transistor Features Package • 1A, 55V r DS O N . . 0.75Ì1 • 'L im it.


    OCR Scan     		PDF RLP1N06CLE 150OC RLP1N06CLE 1N06CLE zener diode 9CA transistor D 716

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - APRIL 94 FXT790A _ [ — — — — — — — — FEATURES * * 40 Volt VCE0 Gain of 200 at lc=1 Amps A ffbJ iiff /I//// * Very low saturation voltage APPLICATIONS


    OCR Scan     		PDF FXT790A 001G35S

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT553 ISSUE 1 - FEB 94 FEATURES * 100 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt REFER TO ZTX553 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage v CB0 -120 V Collector-Emitter Voltage


    OCR Scan     		PDF FXT553 ZTX553 001G35S

    0105-50

    Abstract: Scans-00115685
    Text: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon


    OCR Scan     		PDF -T-33-15 -65to Vcc-28V T-33-15 0105-50 Scans-00115685

    78L05

    Abstract: BLF247B UBD287 TRANSISTOR ss S2d Philips 2222 78 Voltage regulator 78L05
    Text: Product specification Philips Semiconductors BLF247B VHF push-pull power MOS transistor PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability 1 • Withstands full load mismatch. /~ l 2 X~l g• APPLICATIONS g 5 • Large signal applications in the


    OCR Scan     		PDF BLF247B OT262A1 MAM09B 7110aSb 78L05 BLF247B UBD287 TRANSISTOR ss S2d Philips 2222 78 Voltage regulator 78L05