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    TRANSISTOR C123 Search Results

    TRANSISTOR C123 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1232

    Abstract: cox 15um
    Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold


    Original     		PDF C1232 100x10 100x100 100x1 65x65 C1232 cox 15um

    C1232

    Abstract: transistor C123
    Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold


    Original     		PDF C1232 100x10 100x100 100x1 65x65 C1232 C1232-4-98 transistor C123

    C1232

    Abstract: cox 15um cmos transistor 0.35 um
    Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold


    Original     		PDF C1232 100x10 100x100 100x1 65x65 C1232 cox 15um cmos transistor 0.35 um

    640 TRANSISTOR NPN

    Abstract: C1231 c123* transistor
    Text: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N


    Original     		PDF C1231 HVPR0N100 65x65 640 TRANSISTOR NPN C1231 c123* transistor

    C1231

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N


    Original     		PDF C1231 65x65 C1231

    C1231

    Abstract: cox 15um
    Text: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N


    Original     		PDF C1231 C1231-4-98 65x65 C1231 cox 15um

    transistor k 2761

    Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um
    Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C1230 C1230 transistor k 2761 k 2761 transistor poly silicon resistor hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um

    transistor k 2761

    Abstract: C1230 C1206
    Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C1230 C1230 C1230-4-98 transistor k 2761 C1206

    C1230

    Abstract: transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206
    Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


    Original     		PDF C1230 C1230 transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206

    DTC123ESA

    Abstract: C123ES DTC123EE DTC123EKA DTC123EM DTC123EUA SC-72 T106 T146
    Text: DTC123EM / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA Transistor 100mA / 50V Digital transistors with built-in resistors DTC123EM / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA zExternal dimensions (Unit : mm) zApplications Inverter, Interface, Driver


    Original     		PDF DTC123EM DTC123EE DTC123EUA DTC123EKA DTC123ESA 100mA DTC123ESA C123ES SC-72 T106 T146

    transistor c124

    Abstract: C124 E S W transistor IRGPC40FD2 C-123 C-118
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C124 E S W transistor IRGPC40FD2 C-123 C-118

    transistor c124

    Abstract: transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118
    Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118

    transistor c124

    Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor
    Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor

    C123JS

    Abstract: C123 DTC123JKA transistor e42 DTC123JE DTC123JM DTC123JSA DTC123JUA SC-72 T106
    Text: DTC123JM / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor 100mA / 50V Digital transistors with built-in resistors DTC123JM / DTC123JE / DTC123JUA DTC123JKA / DTC123JSA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the


    Original     		PDF DTC123JM DTC123JE DTC123JUA DTC123JKA DTC123JSA 100mA DTC123JUA C123JS C123 transistor e42 DTC123JSA SC-72 T106

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    BUX21

    Abstract: SGS-Thomson BUX21
    Text: • I 7 ^ 2 3 7 o p a a ^ B ? a ■ H ~ " - 3 3 - i s _ r = 7 SCS-THOMSON * 7# B U X 21 S G S- TH OMSON 3ÜE D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX21 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, inten­


    OCR Scan     		PDF BUX21 BUX21 10HHz SGS-Thomson BUX21

    transistor c1237

    Abstract: TSD250N05V
    Text: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250


    OCR Scan     		PDF c1237 Q03QLi02 TSD250N05F TSD250N05V TSD250N05F/V O-240) PC-029« transistor c1237 TSD250N05V

    Untitled

    Abstract: No abstract text available
    Text: 3ÜE ]> • 7 T 2 C1237 DG3Q7S2 b ■ _ - 15 r z 7 SCS-THOMSON Ä 7# — IRFK6H450 ~"s T T ^ thomsÖiT - N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V d ss IRFK6H450 500 V RDS on Id 0.067 n 66 A . . . . HIGH CURRENT POWER MODULE


    OCR Scan     		PDF IRFK6H450 SCM720 O-240) PC-029«

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    SGSP579

    Abstract: No abstract text available
    Text: 3QE D • T ^ E a? 0030071 4 ■ -\3 ^ s r- SGS-THOMSON HLiÊTTMôÊi s 6 S TH0MS0N SGSP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP579 VDSS 500 V f*DS on 0.7 Q •d 9A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE -9A FOR UP TO 350WSMPS


    OCR Scan     		PDF SGSP579 350WSMPS 100KHZ SGSP579

    STHV82

    Abstract: STHV82FI
    Text: T'îS'îaS? £ t7 0 0 4 5 ^ 0 357 • S G T H SGS-THOMSON L i « ! STHV82 STHV82FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STHV82 STHV82FI ■ . . . . . ■ V dss R DS on Id 800 V 800 V <2Q < 2 Ü 5.5 A 3.6 A TYPICAL RDS(on) = 1.65 £2


    OCR Scan     		PDF STHV82 STHV82FI 7T5T237 STHV82/FI STHV82 STHV82FI

    23N05

    Abstract: stk 0055 23n06 23N05L
    Text: 7 ^ 2 ^ 2 3 7 O O M b lB f l S 12 • S G T H STK23N05L STK23N06L SGS-THOMSON *5 7 RÆQ i©[EL[MM©[KS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STK23N 05L STK23N06L . . . . . . ■ . . V dss RDS on Id 50 V 60 V


    OCR Scan     		PDF STK23N05L STK23N06L STK23N OT-82 OT-194 TK23N05L TK23N06L 0S970 7T2R237 23N05 stk 0055 23n06 23N05L

    Untitled

    Abstract: No abstract text available
    Text: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STB6NA60 O-262) O-263) O-262 O-263