TRANSISTOR C-114 E Search Results

TRANSISTOR C-114 E Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C-114 E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UZJ3335 Abstract: UZJ334 UZJ845 UZJ323 UZJ316 UZJ3245 UZJ313 transistor case To 106 UZJ3325 UZJ311 Text: UZJ3 series 0.6.8 16:42 Page 23 UZJ3 Series U-SHAPED TYPE MICRO-PHOTOSENSORS INDUSTRY’S SMALLEST SIZE ENABLES SPACE SAVING AND QUICK INSTALLATION! Quick Fitting Hook-up Connector Easy to maintain connector type models are available. Its exclusive connector is the industry’s first	Original	UZJ33, UZJ335) UZJ3335 UZJ334 UZJ845 UZJ323 UZJ316 UZJ3245 UZJ313 transistor case To 106 UZJ3325 UZJ311	PDF
4 Pin SMD Hall sensors Abstract: Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor Text: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range	Original	6251-456-2DS HAL114, HAL115 HAL11x HAL114 OT-89A SPGS0022-5-A3/2E 4 Pin SMD Hall sensors Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor	PDF
Untitled Abstract: No abstract text available Text: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage	Original	HAL114 6251-456-1AI HAL114S HAL114UA	PDF
Untitled Abstract: No abstract text available Text: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range	Original	HAL114, HAL115 6251-456-2DS HAL11x HAL114	PDF
H7CR-BW-500 Abstract: H7CR-8 H7CR-B manual Omron H7CR H7CR-114 H7CR-BWVG H7CR OMRON DIGITAL COUNTER H7CR manual omron h7crbwvg 500 H7CR-CW DIGITAL COUNTER Text: Digital Counter H7CR DIN 48 x 48 mm Counters with Easy-to-use Functions Designed with an emphasis on ease of operation. All models except -A, and -SA type equipped with prescale function which displays in units of actual physical parameters (length, volume, etc.).	Original	IEC1010-1/EN61010-1 H7CR-8/11 M012-E1-1B H7CR-BW-500 H7CR-8 H7CR-B manual Omron H7CR H7CR-114 H7CR-BWVG H7CR OMRON DIGITAL COUNTER H7CR manual omron h7crbwvg 500 H7CR-CW DIGITAL COUNTER	PDF
transistor t114 Abstract: transistor 13002 to-92 Text: LESHAN RADIO COMPANY, LTD. LR257 AC/DC Current Mode PWM power management controller The LR257 AC—DC is a high efficiency current-mode PWM power supply controller。 It drives an external NPN transistor for high voltage switching. Apply with BiCMOS technology, the	Original	LR257 LR257 EN55022A 150KHz 10MHz 30MHz transistor t114 transistor 13002 to-92	PDF
AT-42085 Abstract: at-42085g S21E at42085g Text: AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many	Original	AT-42085 AT-42085 5965-8913EN 5989-2655EN at-42085g S21E at42085g	PDF
AT41500 Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586	PDF
PHB44N06T Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device	Original	OT404 PHB44N06T PHB44N06T	PDF
PHP44N06T Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance	Original	O220AB PHP44N06T PHP44N06T	PDF
2n2222 national semiconductor Abstract: national 2n2222 2n2222 npn transistor 2N2222 NPN Transistor features 2N2222 transistor Remote Controlled Fan Regulator application 2n2222 2N2222 circuit Datasheet 2N2222 transistor temperature controlled fan regulator Text: 204014_App.Brief#114.qxd 5/15/02 9:22 AM Page 1 Application Brief Autonomous Fan Control For Processor Systems Using The LM85 Application Brief 114 Emmy Denton A system error can be determined by polling the LM85’s status registers. The LM85 includes high and low-limit	Original	com/pf/LM/LM85 2n2222 national semiconductor national 2n2222 2n2222 npn transistor 2N2222 NPN Transistor features 2N2222 transistor Remote Controlled Fan Regulator application 2n2222 2N2222 circuit Datasheet 2N2222 transistor temperature controlled fan regulator	PDF
NTE15012 Abstract: NTE15018 NTE15019 NTE15020 NTE15021 Text: NTE15012 & NTE15018 thru NTE15021 Integrated Circuit TV Fixed Voltage Regulator Features: D Triple Diffused Darlington Transistor Chips Incorporated D Compact Plastic Package with Indistry Standard Reliability D Output Voltage is Pre−Fixed − No External Adjustment is Required	Original	NTE15012 NTE15018 NTE15021 65msec NTE15012 NTE15019 NTE15020 NTE15021	PDF
NTE15019 Abstract: NTE15012 NTE15018 NTE15020 NTE15021 Text: NTE15012 & NTE15018 thru NTE15021 Integrated Circuit TV Fixed Voltage Regulator Features: D Triple Diffused Darlington Transistor Chips Incorporated D Compact Plastic Package with Indistry Standard Reliability D Output Voltage is Pre–Fixed – No External Adjustment is Required	Original	NTE15012 NTE15018 NTE15021 65msec NTE15019 NTE15012 NTE15020 NTE15021	PDF
DTC114TS Abstract: No abstract text available Text: V~P>V DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV / T ransistors D TC 114 T U /D T C 114 T K /D T C 114TS DTC114T F /D T C 114T L /D T C 114TA D TC 114TV h 7 > y ^ ^ ‘i "J •^■/Transistor Switch Digital Transistors Includes Resistors	OCR Scan	DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV 114TS DTC114T 114TA 114TV DTC114TS	PDF

Untitled Abstract: No abstract text available Text: Transistors Digital transistors built-in resistors D T C 114 E E / D T C 114 E U A / D T C 1 14 E K A D T C 114 E C A / D T C 114 E S A •F e a tu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input	OCR Scan	DTC114EKA DTC114ECA DTC114ESA GG17G45 E/DTC114EUA/DTC114EKA/DTC114ECA/DTC114ESA GD17D4L.	PDF
TO63 package Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3	OCR Scan	2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package TRANSISTOR C 2570 TO114 package 2n3150 transistor 2n4866 2N5251 2N5927 JAN	PDF
TO63 package Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003 Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3	OCR Scan	2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150	PDF
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 N ceo Ic PACKAGE DEVICE sus (max) TYPE VOLTS AMPS hFE@ L / ^CE (min/max @ A/V) ^CE(sat) @ I c^ b (V @ A/A) * D* fT p WATTS (MHz) N PN 2N 3265 90 20 25-55@ 15/2 1@ 20/2 100 20 TO -63 2N 3266 60 20 20-80@ 15/3	OCR Scan		PDF
P4M transistor Abstract: AS-016 AS016 DTA114EU Text: Transistors Digital transistors built-in resistors D T A 114 E E /D T A 114 E U A /D T A 114 E K A /D T A 114 E S A •F ea tures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).	OCR Scan	DTA114EE P4M transistor AS-016 AS016 DTA114EU	PDF
TRANSISTOR SE 135 Abstract: No abstract text available Text: AVANTEK INC 5DE D • 0A V A N T E K OODfc^SO □ AT-01610 Up to 4 GHz General PurposeSilicon Bipolar Transistor Avantek 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 d B typical G i dB at 2.0 G Hz • High Galn-Bandw idth Product: 7.0 GHz typical fr	OCR Scan	AT-01610 TRANSISTOR SE 135	PDF
Untitled Abstract: No abstract text available Text: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .	OCR Scan		PDF
itt ol 170 Abstract: No abstract text available Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch	OCR Scan	HAL114 HAL114S HAL114UA 4bfiZ711 itt ol 170	PDF
Untitled Abstract: No abstract text available Text: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.	OCR Scan	DD14TS7 LTE21009R LTE21015R FO-41B)	PDF
npn pnp transistor bipolar cross reference Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A Text: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l	OCR Scan		PDF

TRANSISTOR C-114 E Search Results

TRANSISTOR C-114 E Result Highlights (5)

TRANSISTOR C-114 E Datasheets Context Search

UZJ3335

4 Pin SMD Hall sensors

Untitled

Untitled

H7CR-BW-500

transistor t114

AT-42085

AT41500

PHB44N06T

PHP44N06T

2n2222 national semiconductor

NTE15012

NTE15019

DTC114TS

Untitled

TO63 package

TO63 package

Untitled

P4M transistor

TRANSISTOR SE 135

Untitled

itt ol 170

Untitled

npn pnp transistor bipolar cross reference