Power Semiconductor Applications Philips Semiconductors
Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management
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TIP110 equivalent
Abstract: No abstract text available
Text: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220
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TIP110/111/112
TIP115/116/117
O-220
TIP110
TIP111
TIP112
TIP110 equivalent
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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do5-900
Unit2607
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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do5-900
Unit2607
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NQFP-32
Abstract: nqfp package 30521 amis microcontroller step motor driver nxt AMIS-30521 h-bridge gate drive schematics circuit NQFP-32 ONsemi step motor driver sla stepper motor sla
Text: AMIS-30521, NCV70521 AMIS-30521/NCV70521 Micro-Stepping Motor Driver Introduction • Dual H−Bridge for 2 Phase Stepper Motors • Programmable Peak−Current Up to 1.2 A Continuous 1.5 A Short • • • • • • • 29 28 MOTXP 30 MOTXP 31 VBB DO
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AMIS-30521,
NCV70521
AMIS-30521/NCV70521
PC20070309
AMIS-30521/NCV70521
AMIS-30521/D
NQFP-32
nqfp package
30521
amis microcontroller
step motor driver nxt
AMIS-30521
h-bridge gate drive schematics circuit
NQFP-32 ONsemi
step motor driver sla
stepper motor sla
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NCV70522
Abstract: 30522 AMIS-30522 NQFP-32 nqfp stepper motor sla A114 AMIS30522C5222G AMIS30522C5222RG JESD22
Text: AMIS-30522, NCV70522 Micro-Stepping Motor Driver Introduction • • • • • • • • • • • • • • • • Time , Using a 5−Bit Current DAC On−Chip Current Translator SPI Interface Speed and Load−Angle Output 7 Step Modes from Full−Step up to 32 Micro−Steps
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AMIS-30522,
NCV70522
AMIS-30522/D
NCV70522
30522
AMIS-30522
NQFP-32
nqfp
stepper motor sla
A114
AMIS30522C5222G
AMIS30522C5222RG
JESD22
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h-bridge gate drive schematics circuit
Abstract: H-bridge Mosfet h-bridge pwm schematics circuit stepper motor sla 1N4003 A114 AMIS30511 JESD22 amis 30511 3 phase MOTOR CONTROL ic
Text: AMIS-30511 Micro-Stepping Motor Driver Introduction Key Features • Dual H−Bridge for 2−phase Stepper Motors • Programmable Peak−current up to 800 mA Using a 5−bit Current • • • • • • • • • • • • DAC On−chip Current Translator
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AMIS-30511
AMIS-30511/D
h-bridge gate drive schematics circuit
H-bridge Mosfet
h-bridge pwm schematics circuit
stepper motor sla
1N4003
A114
AMIS30511
JESD22
amis 30511
3 phase MOTOR CONTROL ic
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1N4003 specs
Abstract: 1.8 degree BIPOLAR 4 PIN stepper motor step motor driver sla nqfp AMIS-30522 0.65mm pitch BGA 30521 h-bridge gate drive schematics circuit h-bridge pwm schematics circuit AMIS30522C5222G
Text: AMIS-30522 Micro-Stepping Motor Driver 1.0 Introduction The AMIS-30522 is a micro-stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and a SPI interface with an external microcontroller. It has an on-chip voltage regulator, reset-output and watchdog reset, able to supply
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AMIS-30522
AMIS-30522
1N4003 specs
1.8 degree BIPOLAR 4 PIN stepper motor
step motor driver sla
nqfp
0.65mm pitch BGA
30521
h-bridge gate drive schematics circuit
h-bridge pwm schematics circuit
AMIS30522C5222G
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AMIS-30512
Abstract: smd 103 stepper motor driver h-bridge gate drive schematics circuit h-bridge pwm schematics circuit 1N4003 A114 JESD22 3 phase MOTOR CONTROL ic 941 smd transistor
Text: AMIS-30512 Micro-Stepping Motor Driver Introduction Key Features http://onsemi.com PIN ASSIGNMENT DO VDD GND DI CLK NXT DIR ERR SLA CPN CPP VCP • Dual H−Bridge for 2−phase Stepper Motors • Programmable Peak−current up to 800 mA Using a 5−bit Current
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AMIS-30512
AMIS-30512/D
AMIS-30512
smd 103 stepper motor driver
h-bridge gate drive schematics circuit
h-bridge pwm schematics circuit
1N4003
A114
JESD22
3 phase MOTOR CONTROL ic
941 smd transistor
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D-77761
Abstract: E30R vegacap 11 VEGACAP SERIES 60 CBAR6 SW6020 DN 111 E30C
Text: Level and Pressure Operating Instruction VEGACAP 1 Safety information Safety information The described module must only be installed and operated as described in this operating instruction. Please note that other action can cause damage for which VEGA does not take
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D-77761
E30R
vegacap 11
VEGACAP SERIES 60
CBAR6
SW6020
DN 111
E30C
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Tico 735
Abstract: switching transistor msd hengstler 735 tico WIRING OF 12 VOLT RELAY LATCHING HOW TO AND MORE
Text: Operating Instructions tico 735 - Temperature Indicator Introduction Your Hengstler tico 735 Temperature Indicator is one model in a family of 1/8 DIN units which offers breakthrough display technology as well as easy-to-program single-line parameters. Designed to provide instant visual feedback regarding an application’s key input value, the tico 735 not
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4-20m,
D-78550
1120600eli
Tico 735
switching transistor msd
hengstler 735 tico
WIRING OF 12 VOLT RELAY LATCHING HOW TO AND MORE
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MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718
H1-C01EC0-0110015TA
MN638S
STA464C
sk 3001s
relay Re 04501
spf0001
sta509a
Schottky Diode 80V 6A
2SD2633
sk 5151s
SLA2403M
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem entary to T IP 1 10/111/112
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TIP115/116/117
TIP115
TIP117
TIP116
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112
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TIP115/116/117
TIP115
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117
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TIP110/111/112
TIP110
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MPF111
Abstract: No abstract text available
Text: MPF 111 SILICON SILICON N-CHANNEL JUNCTION F IE L D -E F F E C T TRANSISTOR D e p le tio n M ode N-CHANNEL JUNCTION F IE LD -E F FE C T TRANSISTOR device designed fo r general-purpose a m p lifie r and s w itc h in g ap p lic a tio n s . • L o w T ra n s fe r C apacitance — C rss = 1.5 pF (T y p ) @ V q s = 10 V d c
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MPF111
MPF111
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2N4115
Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
Text: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP
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NPWTO-111
fl35a
2N4115
2N4116
2N5002
2N5004
2N5083
2N5084
2N5085
2N5284
2N5285
2N5346
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PS2016B
Abstract: HP 2531 ic ps2016b PS2741 PS2016 H2525 PS2041 TLP112A 4534 PC417
Text: — 250— LED-Photo Diode Buffered by Transistor L E D - 7 t h rn L m m n ft I r * 111 2 01 ft *,‘i TLP112 # tt * € 2 T L P 112A If max mA) 25 * Vr max (V ) 5 -c 1HJ ft ;* Po 1 max (mW) 45 VCE max (V ) Vcc* 15 P dz IOL max max (m A ) (mW) 8 100 £
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TLP112
TLP112A
PS2741
PS2016B
PS2041T
LP512
PC417
HP 2531
ic ps2016b
PS2016
H2525
PS2041
4534
PC417
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phototransistor til 33
Abstract: TIL112 TIL111 Til 160 h11a H11A1 H11A2 H11B1 TIL116 H11D2
Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60
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H11A1
H11A2
H11B1
H11B2
H11D2
H11D3
H11D4
MCA230
TIL114,
TIL11S,
phototransistor til 33
TIL112
TIL111
Til 160
h11a
TIL116
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BUK637-600A
Abstract: BUK637-600B BUK637-600C
Text: Philips Components BUK637-600A BUK637-600B BUK637-600C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode,
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BUK637-600A
BUK637-600B
BUK637-600C
BUK637
-600A
-600B
-600C
BUK637-600A
BUK637-600B
BUK637-600C
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1n 4148 diode
Abstract: Diode ph 4148 3904 transistor P111-1A 4148 diode 2N 3904 transistor 4148 ph diode ph 4148 diode ph 4148 1n ADP1 Series
Text: ANALO G D E V IC E S Micropower, Step-Up/Step-Down SW Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1111 FEATURES Operates from 2 V to 30 V Input V oltage Range 72 kHz Frequency Operation Utilizes Surface M ount Inductors Very Few External Components Required
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ADP1111
C2213-12-10/96
1n 4148 diode
Diode ph 4148
3904 transistor
P111-1A
4148 diode
2N 3904 transistor
4148 ph diode
ph 4148 diode
ph 4148 1n
ADP1 Series
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.
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iPC271
PC2710T
WS60-00-1
C10535E)
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HP 4N46
Abstract: 4N45 4N46 6N138 6N139 HCPL-0700 HCPL-0701 HCPL-5700 HCPL-5701 TLP553
Text: - LED -P hoto Diode Buffered by Darlington Transistor with Inter Base Connection L E D - 7 * h • ¿-T K + 2 '- U > h > • 257- m m in fn # IjJ LlJ UJ LU * ft 1 59 # tt. £ JE D E C 6N 138 '-k 2 m T LP553 3K H C P L -0 7 0 0 HP £ H C P L -0 7 0 1 * If
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6N138
6N139
TLP553
HCPL-5700
HCPL-5701
HP 4N46
4N45
4N46
HCPL-0700
HCPL-0701
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Untitled
Abstract: No abstract text available
Text: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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bb53T31
BLF245C
OT161
-SOT161
MRA326
RA92S
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