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    TRANSISTOR C SERIES Search Results

    TRANSISTOR C SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    DM8160N
    Rochester Electronics LLC DM8160 - Magnitude Comparator, 8160 Series, 6-Bit, TTL, PDIP16 Visit Rochester Electronics LLC Buy
    MC74F148N
    Rochester Electronics LLC MC74F148 - Encoder, F/FAST Series, 8-Bit, TTL, PDIP16 Visit Rochester Electronics LLC Buy
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C SERIES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6002 transistor

    Abstract: QCA50B QCA50B40 QCA50B60 QCB50A40 QCB50A60 UUE76102
    Contextual Info: 0002171 IDT TRANSISTOR M ODULE QCA50B/QCB50A40/60 UUE76102 M Q C A 5 0 B and Q C B 5 0 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


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    QCA50B/QCB50A40/60 QCA50B QCB50A 400/600V UUE76102 0CA50B QCA50B40 0D02172 50A40 b0B60 6002 transistor QCA50B60 QCB50A40 QCB50A60 PDF

    F1K marking

    Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


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    BCW61A/B/C/D KS5086 BCW61 F1K marking PDF

    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6519 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector Dissipation


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    2N6519 2N6520 PDF

    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6518 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector Dissipation


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    2N6518 2N6520 PDF

    BCW General Purpose Transistor

    Abstract: l9902
    Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation


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    BCW60A/B/C/D BCW General Purpose Transistor l9902 PDF

    Contextual Info: BCX70H NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


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    BCX70H KS3904 PDF

    L9902

    Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BCX70J GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


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    BCX70J KS3904 L9902 PDF

    Contextual Info: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage E m itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


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    BCX70K KS3904 PDF

    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C Characteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector D issipation


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    2N6520 PDF

    Contextual Info: KST4125 PNP EPITAXIAL SILICON TRANSISTOR G ENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic S ym bol C ollector-Base Voltage C ollecto r-E m itte r Voltage Em itter-Base Voltage C ollector C urrent C o llecto r Dissipation


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    KST4125 OT-23 KST3906 PDF

    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BCW29 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Junction Tem perature Storage Tem perature


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    BCW29 KST5088 PDF

    VF155

    Abstract: VF150 vf152 VF153 vf154 VF155-2 VF155-1 VF155B VF150-1 VF155A
    Contextual Info: m MATEC CORP/ VALPEY-FISHER SÔL.10S4 00QQ35L 7ST bME D IVPC OSCILLATORS TTL LOGIC HYBRID CRYSTAL C LO C K OSCILLATORS VF150 Series TTL Hybrid Crystal Clock Oscillators Valpey-Fisher’s VF150 series designates a family of oscillators compatible with transistor-transistor-logic circuitry often


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    00QQ35L VF150 VF153-1 VF153C-1 VF153D-1 VF152A-1 VF152B-1 VF155 vf152 VF153 vf154 VF155-2 VF155-1 VF155B VF150-1 VF155A PDF

    Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR • C ollector-E m itter Voltage: V C e s = 2 0 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit V C ollector-E m itter Voltage


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    KSP12 PDF

    Contextual Info: • TRANSISTOR MODULE 7«maM3 0005177 357 QCA75A/QCB75A40/60 UL;E76102 M and Q C B 7 5 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


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    QCA75A/QCB75A40/60 E76102 A75A60 B75A40 B75A60 QCA75A/QCB75A PDF

    Contextual Info: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C ollector-E m itter Voltage: V Ceo = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage


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    KSP8097 PDF

    sc5-S

    Abstract: RT1P144C RT1P144M RT1P144T2 RT1N144X RT1P144S RT1P144U ml021
    Contextual Info: Transistor RT1 P I 44X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P144X is a OUTLINE DRAWING one chip transistor R T iP i ^ C R T 1 P 144U with b u ilt-in bias resistor.NPN type is RT1NM4X UNIT: mm


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    HT1P144X RT1N144X 47kft) RT1P144TÃ RT1P144C RT1P144M O-236 sc5-S RT1P144C RT1P144M RT1P144T2 RT1N144X RT1P144S RT1P144U ml021 PDF

    Contextual Info: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    QCA75AA100 E76102 100msec 00V-----IB, PDF

    Contextual Info: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­


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    QCA200A40/60 400/600V QCA200A PDF

    Ksp44 data

    Abstract: transistor KSP44 data
    Contextual Info: KSP44M/45M NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAG E TRANSISTOR • C ollector-E m itter Voltage: VCeo=KSP44: 400V KSP45: 350V • C ollector D issipation: Pc m ax =1.2W TO -126 ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic C ollector Base Voltage


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    KSP44M/45M KSP44: KSP45: KSP44 KSP45 Ksp44 data transistor KSP44 data PDF

    9962 GH

    Abstract: L9932 l9933 9945 A transistor DTL 9930 9936 GN 9962 6H fairchild 9930 integrated circuits data inverter circuit diagram 9936 FD100 diode
    Contextual Info: DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT MILITARY TEMPERATURE RANGE: - 5 5 ° C to + 1 2 5 ° C GENERAL DESCRIPTION The Fairchild 9930 series of Diode Transistor Micrologic is a member of the Compatible Current Sinking Logic CCSL family designed for use in


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    O-116) 0035j^ U3IXXXX51X U6AXXXX51X 9962 GH L9932 l9933 9945 A transistor DTL 9930 9936 GN 9962 6H fairchild 9930 integrated circuits data inverter circuit diagram 9936 FD100 diode PDF

    SOT-23

    Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
    Contextual Info: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


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    BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65 PDF

    Contextual Info: KSP6520/6521 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: V C e o = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit Col lector-Base Voltage


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    KSP6520/6521 PDF

    Contextual Info: TRANSISTOR MODULE QCA100AA100 UL;E76102 M Q C A 1O O A A 10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    QCA100AA100 E76102 PDF

    2N6428A

    Contextual Info: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage


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    N6428/6428A 2N6428A PDF