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    TRANSISTOR C 9015 Search Results

    TRANSISTOR C 9015 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 9015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BR 9014

    Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector


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    BR 9014

    Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    BR 9014

    Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    PDF 100mA, BR 9014 BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015

    BR 9014

    Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    BR 9014

    Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    br 9015

    Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    PDF 100mA, br 9015 pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C

    BR 9015

    Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    PDF 100mA, BR 9015 transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor

    transistor c 9015

    Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    PDF 100mA, transistor c 9015 BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92

    BR 9014 transistor

    Abstract: BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C 9014 TRANSISTOR c 9014 st 9014 NPN 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    transistor 9015 c

    Abstract: 9015 PNP transistor c 9015 C 9015 transistor 9015 transistor pnp transistor 9015 UTC 9015 transistor 9015 9015 transistor specification sheet utc 9014
    Text: UTC 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC 9014 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


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    PDF 450mW) QW-R201-032 transistor 9015 c 9015 PNP transistor c 9015 C 9015 transistor 9015 transistor pnp transistor 9015 UTC 9015 transistor 9015 9015 transistor specification sheet utc 9014

    transistor 9015 c

    Abstract: 9015 PNP
    Text: UNISONIC TECHNOLOGIES CO., LTD 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number Package


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    PDF 450mW) 9015L-x-T92-B 9015G-x-T92-B 9015L-x-T92-K 9015G-x-T92-K QW-R201-032 transistor 9015 c 9015 PNP

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  FEATURES 1 * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9015  ORDERING INFORMATION Ordering Number Package Lead Free


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    PDF 450mW) 9014L-x-T92-B 9014G-x-T92-B 9014L-x-T92-K 9014G-x-T92-K QW-R201-031

    B 9014 npn

    Abstract: C 9014 transistor 9014 transistor TRANSISTOR c 9014 data sheet transistor 9014 npn data sheet transistor 9014 9014 transistor specification 9014 npn 9014 transistor 9014 NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9015 *Pb-free plating product number: 9014L „ ORDERING INFORMATION


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    PDF 450mW) 9014L 9014-x-T92-B 9014L-x-T92-B 9014-x-T92-K 9014L-x-T92-K QW-R201-031 B 9014 npn C 9014 transistor 9014 transistor TRANSISTOR c 9014 data sheet transistor 9014 npn data sheet transistor 9014 9014 transistor specification 9014 npn 9014 transistor 9014 NPN

    transistor npn c 9014

    Abstract: 9014 9014 transistor 9014 NPN UTC 9015
    Text: UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


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    PDF 450mW) 100mA, QW-R201-031 transistor npn c 9014 9014 9014 transistor 9014 NPN UTC 9015

    utc 9014

    Abstract: C 9014 transistor 9014 current rating transistor 9014 C npn UTC9014 transistor npn c 9014 9014 transistor specification data sheet transistor 9014 NPN datasheet transistor 9014 TRANSISTOR 9014
    Text: UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


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    PDF 450mW) QW-R201-031 utc 9014 C 9014 transistor 9014 current rating transistor 9014 C npn UTC9014 transistor npn c 9014 9014 transistor specification data sheet transistor 9014 NPN datasheet transistor 9014 TRANSISTOR 9014

    transistor 9015 c

    Abstract: pnp transistor 9015 9015 TO-92 transistor c 9015 v 9015 transistor C 9015 transistor transistor 9015 Free 9014 9015* Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number


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    PDF 450mW) 9015L-x-T92-B 9015L-x-T92-K 9015L-x-T92-T 9015G-x-T92-B 9015G-x-T92-K 9015G-x-T92-T QW-R201-032 transistor 9015 c pnp transistor 9015 9015 TO-92 transistor c 9015 v 9015 transistor C 9015 transistor transistor 9015 Free 9014 9015* Transistor

    transistor 9015 c

    Abstract: transistor c 9015 C 9015 transistor pnp transistor 9015 9015 transistor 9015 V. 9015 c af 9015 transistor 9015 LM 9015
    Text: HN 9015 PNP Silicon Expitaxial Planar Transistor for switching and AF am plifier applications. The transistor is subdivided into four groups, A, B, C, and D, according to its DC current gain. As com plem entary type the NPN transistor HN 9014 is recommended.


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    transistor 9014 C npn

    Abstract: V. 9014 c C 9014 transistor TRANSISTOR c 9014 9014 C transistor 9014 NPN transistor 9014 c 9014 Transistor S 9014 npn V 9014 c
    Text: HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and D, acco rd in g to its DC current gain. As com plem entary type the PNP transistor HN 9015 is recommended.


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE T O -9 2 • High total pow er dissipation. PT=450mW • High hpE and good linearity • C om plem entary to S S 9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol


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    PDF SS9014 450mW

    9014 ch

    Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
    Text: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011


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    PDF O-92A 9014 ch transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor

    2sc 9015

    Abstract: 2236A 2482 TRANSISTOR 9014 to-92 KTC2229 2SC 9012 966a KTC9016 ktp87 9015 TO-92
    Text: @] TV TRANSISTOR USE TYPE VC E 0 V 7K O ELECTRICAL CHARACTERISTICS (Ta = 2 5 C ) MAXIMUM RATINGS lC pC T. ICBO (mA) (mW) <°C) (M A) hFE V c e (M t) MAX VCB [E V CE k' (V) (m A) (V) (mA) (V) Ic Ib (m A) (mA) (MHz) Z*J C o b , * Cre T yp (MIN) h VCE lc (V)


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    PDF 382/KTN 383/KTN 88A/KTN 2229/KTN KTC9013 2sc 9015 2236A 2482 TRANSISTOR 9014 to-92 KTC2229 2SC 9012 966a KTC9016 ktp87 9015 TO-92

    kec kta

    Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
    Text: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)


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    PDF 382/KTN 383/KTN 88A/KTN 2229/KTN O-92A) KTC90U KTC9013 kec kta 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068

    transistor c 9018

    Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
    Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF


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    PDF T0-92B 500fi 10kfi transistor c 9018 Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor