TRANSISTOR C 839 Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

58W SOT

Abstract: BLW85 ZL18
Contextual Info: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

BLW 82

Contextual Info: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

MPQ3762

Abstract: it 051 1N916 2N3762 tup pnp transistor
Contextual Info: M P Q silicon 3 7 6 2 QUAD DUAL IN-LINE PNP SILICON ANNULAR MEMORY DRIVER TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON MEMORY DRIVER TRANSISTOR . . . designed fo r high-current, high-speed switching. • Low Collector-E m itter Saturation Voltage — VC E (sat) s 0 .5 5 V d c (M ax) @ l c s 5 0 0 m Adc

RC723DP

Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Contextual Info: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

6N1135-X006

Abstract: TRANSISTOR SMD MARKING CODE t 04
Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

6 pin TRANSISTOR SMD CODE 21

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

MCH4008

Abstract: TB 2920
Contextual Info: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

2SA939

Abstract: 2SA939 B 2SA839 HI-FI AMP 200X2mm 2SA839-0 sfik
Contextual Info: 2 s a 839 " ^ v i i y p N ^ P = m m * y & ^ y y z 5> SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR o ismmntimmm o mmmnttmmm o Audio Power Amplifier Applications o Driver Stage Amplifier Applications • S if f l E T -i - : • asm* v CE0 = - 150 V Hi-Fi 2 S C 1 6 69 k

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

SMD Transistor t 06

Contextual Info: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd

Contextual Info: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd

DIN EN 17635

Abstract: 6N1135 6N1135-X007 6N1136 6N1136-X006 6N1136-X007 6N1136-X009 OPTOCOUPLER photo output K6N135
Contextual Info: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd

SHI20

Abstract: ic ZN 415 yx 861 1g1b
Contextual Info: H D66300T- Horizontal Driver fo r TFT-Type LC D C olor TV The HD66300T is a horizontal d river used for TFTtype (Thin Film Transistor) LCD color TVs. Specifi­ cally, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R,

STA405A

Abstract: SMA6012 sma4031 STA451C STA438A STA455C STA439A sla6023 STA471A STA437A
Contextual Info: 1 * * P M 1 SANKEN DISCRETE TRANSISTOR ARRAYS V ceo I c I cp hfE (A) min Type No. (V ) Equivalent Circuit Diagram Type No. V ceo IcOcp} hpE (V) (A) m in E quivalent Circuit D iagram STA301A 60±10 4(8) 1000 1 SMA4020 -60 -4 2000 30 STA302A -50 -4 (-8) 1000

te 2443 MOTOROLA transistor

Abstract: 1S2210 MOSFET 830 63 ng MRF171
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.