TRANSISTOR C 5706 Search Results

2sc5706

Abstract: 2SC5706D TRANSISTOR C 5706 npn general purpose transistors application c 5706 c2a marking 2sc5706 transistor
Contextual Info: 2SC5706 D NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product TO-252 6. 50Ć0. 15 FEATURES 2. 30Ć0. 10 5. 30Ć0. 10 C •Large current capacitance •Low collector-to-emitter saturation voltage •High-speed switching •High allowable power dissipation

WT5703

Abstract: WT5705 westinghouse capacitor westcode Inverter Diode hawk* 500v Westinghouse diode westinghouse transistors WT5706 westinghouse 300a Westcode Semiconductors
Contextual Info: WESTCODE S E M I C ON DU CT OR S 41 DE 1 ^ 7 0 ^ 5 5 OODlöOa 7 T - f WESTCODE ® SEMICONDUCTORS - . Technical Publication WT5703/06 Issue 1 February 1981 High Power Transistor Types WT5703 to WT5706 • 150kW Switched Power • 300 Amperes Continuous • 500 Volts Sustaining Voltage

zener 20w

Abstract: DB-57060S-526 EXCELDRC35C 3214W-1-103E A02TJ B10TJ GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060S
Contextual Info: DB-57060S-526 RF POWER amplifier using 1 x PD57060S N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg

DB-57060-526

Abstract: transistor 526 zener 20w A02TJ B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060
Contextual Info: DB-57060-526 RF power amplifier using 1 x PD57060 N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg

CAPACITOR 33PF

Abstract: zener 20w 3214W-1-103E A02TJ B10TJ DB-57060S-526 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50
Contextual Info: DB-57060S-526 RF POWER amplifier using 1 x PD57060S N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg

TRANSISTOR C 5706

Abstract: transistor marking 2a CZD5706 80 V NPN epitaxial silicon transistor
Contextual Info: CZD5706 5 A, 80 V NPN Epitaxial Silicon Transistor Elektronische Bauelemente D-Pack TO-252 DESCRIPTION The CZD5706 is designed for high current switching application. FEATURES ♦ ♦ ♦ ♦ Large Current Capacitance Low Collector to Emitter Saturation Voltage

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

transistor e2w

Abstract: book TRANSISTOR 2N2222
Contextual Info: For Immediate Assistance, Contaci M Local Salesperson IRR-BWOWW« XTR101 AVAILABLE IN DIE Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • INSTRUMENTATION AMPLIFIER INPUT Low Offset Voltage, 30nV max Low Voltage Drift, 0.75|iV/°C max

TRANSISTOR C 5706

Abstract: c 5706 SMD Ic LM339M so do SMD Ic LM339M smd lm339 8 pin ic lm339 datasheet for comparator ic lm339 IC LM339N LM139 APPLICATIONS lm339n circuit diagram
Contextual Info: LM139 LM239 LM339 LM2901 LM3302 Low Power Low Offset Voltage Quad Comparators General Description The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as low as 2 mV max for all four comparators These were designed specifically to operate from a single power supply

lm339a

Abstract: lm139a LM239A LMI39 LM339AJ LM3302J lm139 LM339 DC lm339a schematic 95ac
Contextual Info: National Semiconductor LM 139/LM239/LM339/LM139A/LM239A/LM339A/ LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators General Description • ■ ■ ■ The LM139 series consists of four independent precision

lm 353

Abstract: LM339 APPLICATIONS zero crossing lm139 LM339 DC M3302 RETS139X LM 339 application note
Contextual Info: LM139/LM239/LM339/LM2901 /LM3302 Semiconductor National LM 139/LM 239/LM 339/LM 2901/ LM3302 Low Power Low Offset Voltage Quad Comparators General Description The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as

N09A

Abstract: N08A LMV431AIM5 LMV431 LMV431A LMV431AIZ LMV431IZ OX SOT23-5 switche B18 SOT23-5
Contextual Info: National’s Industry Standard Click For More LMV431 Info LMV431 Click For More LMV431A Info Qualification Package Low-Voltage 1.24V Adjustable Precision Shunt Regulator 3.3V Off-line Switching Regulator SWITCHER To AC Outlet 3.3V Opto. Iso. Feedback Control

LM3647

Abstract: LM3621 LM3622 LLP-14 LM3420 LM3620 LP3945 LP3946 Li-Ion Battery Charger SOT23-5
Contextual Info: LP3945/46 Battery-Charging Systems LP3945 battery charging system typical application circuit CHG-IN BATT AC adapter VBSense LP3945 CHG SCL EOC EN To system Li-Ion supply 10 µf or NiMh Diff-Amp BIPB The charger has under-voltage and over-voltage protection as well as an internal 5.6 hour timer

MRF449

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com ­ mercial and amateur radio equipment to 30 MHz. •

DIP20

Abstract: SO20 TEA5702A TEA5702AD
Contextual Info: TEA5702A ADVANCED 2-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA . . . . . . . . PLAY-BACK MODE LOW NOISE AND WIDE BAND AMPLIFIERS FOR 2 HEADS AUTOMATIC OFFSET CANCELLATION BETWEEN THE 2 SELECTED HEADS ONE PLAY-BACK OUTPUT WITHOUT AGC TWO PLAY-BACK OUTPUTS INCLUDING

Contextual Info: TEA5702A ADVANCED 2-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA . . . . . . . . PLAY-BACK MODE LOW NOISE AND WIDE BAND AMPLIFIERS FOR 2 HEADS AUTOMATIC OFFSET CANCELLATION BETWEEN THE 2 SELECTED HEADS ONE PLAY-BACK OUTPUT WITHOUT AGC TWO PLAY-BACK OUTPUTS INCLUDING

2SC5706 equivalent

Abstract: 2sc5706 equivalent transistor 2sc5706 transistor 2sc5706 Transistor 2SC5706 2sc5706 datasheet c90m
Contextual Info: 2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation Mechanical Data:

Contextual Info: 2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation Mechanical Data:

Contextual Info: TEA5706A ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA RECORD MODE TWO INTEGRATED I/I CONVERTERS WITH ACCURATE CONTROL OF TRANSCONDUCTANCE AUTOMATIC PLAY-BACK/RECORD SWITCHING BY SCANNING OF RECORD SUPPLY PLAY-BACK LOOP INHIBITION

TEA5706A

Contextual Info: TEA5706A ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA RECORD MODE TWO INTEGRATED I/I CONVERTERS WITH ACCURATE CONTROL OF TRANSCONDUCTANCE AUTOMATIC PLAY-BACK/RECORD SWITCHING BY SCANNING OF RECORD SUPPLY PLAY-BACK LOOP INHIBITION

Contextual Info: TEA5706 ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA RECORD MODE TWO INTEGRATED I/I CONVERTERS WITH ACCURATE CONTROL OF TRANSCONDUCTANCE AUTOMATIC PLAY-BACK/RECORD SWITCHING BY SCANNING OF RECORD SUPPLY PLAY-BACK LOOP INHIBITION RECORD AMPLIFIERS WITH AUTOMATIC

1N4148

Abstract: TEA5706
Contextual Info: TEA5706 ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA RECORD MODE TWO INTEGRATED I/I CONVERTERS WITH ACCURATE CONTROL OF TRANSCONDUCTANCE AUTOMATIC PLAY-BACK/RECORD SWITCHING BY SCANNING OF RECORD SUPPLY PLAY-BACK LOOP INHIBITION RECORD AMPLIFIERS WITH AUTOMATIC

gsm module 900

Abstract: delta v dcs B100 DLT3201 GSM900 NL-5928
Contextual Info: Preliminary DLT3201 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications FEATURES - Supports dual/triple-band GSM handsets - Small footprint 9mm 10mm and low Profile (1.5mm max.) - InGaP HBT technology - High efficiency: 50% (min.) for GSM900;

u12m4t

Contextual Info: COMPONENTS B U R R -B R O W N E OPA5Û1/883B SERIES ] OPA501VM/883B OPA501VM OPA501UM/883B OPA501UM REVISION A JANUARY, 1989 High Current, High Power Military OPERATIONAL AMPLIFIER FEATURES • WIDE SUPPLY RANGE. ± 10 V to ±40V • HIGH OUTPUT CURRENT. ± 10 A Peak