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    TRANSISTOR C 5706 Search Results

    TRANSISTOR C 5706 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 5706 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sc5706

    Abstract: 2SC5706D TRANSISTOR C 5706 npn general purpose transistors application c 5706 c2a marking 2sc5706 transistor
    Text: 2SC5706 D NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product TO-252 6. 50Ć0. 15 FEATURES 2. 30Ć0. 10 5. 30Ć0. 10 C •Large current capacitance •Low collector-to-emitter saturation voltage •High-speed switching •High allowable power dissipation


    Original     		2SC5706 O-252 01-Jun-2002 500mA 2SC5706D 2sc5706 2SC5706D TRANSISTOR C 5706 npn general purpose transistors application c 5706 c2a marking 2sc5706 transistor PDF

    zener 20w

    Abstract: DB-57060S-526 EXCELDRC35C 3214W-1-103E A02TJ B10TJ GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060S
    Text: DB-57060S-526 RF POWER amplifier using 1 x PD57060S N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg


    Original     		DB-57060S-526 PD57060S 526MHz DB-57060S-526 zener 20w EXCELDRC35C 3214W-1-103E A02TJ B10TJ GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060S PDF

    DB-57060-526

    Abstract: transistor 526 zener 20w A02TJ B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060
    Text: DB-57060-526 RF power amplifier using 1 x PD57060 N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg


    Original     		DB-57060-526 PD57060 526MHz 2002/95/EC DB-57060-526 transistor 526 zener 20w A02TJ B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060 PDF

    CAPACITOR 33PF

    Abstract: zener 20w 3214W-1-103E A02TJ B10TJ DB-57060S-526 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50
    Text: DB-57060S-526 RF POWER amplifier using 1 x PD57060S N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg


    Original     		DB-57060S-526 PD57060S 526MHz DB-57060S-526 CAPACITOR 33PF zener 20w 3214W-1-103E A02TJ B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PDF

    TRANSISTOR C 5706

    Abstract: transistor marking 2a CZD5706 80 V NPN epitaxial silicon transistor
    Text: CZD5706 5 A, 80 V NPN Epitaxial Silicon Transistor Elektronische Bauelemente D-Pack TO-252 DESCRIPTION The CZD5706 is designed for high current switching application. FEATURES ♦ ♦ ♦ ♦ Large Current Capacitance Low Collector to Emitter Saturation Voltage


    Original     		CZD5706 O-252) CZD5706 100mA 500mA 01-June-2009 TRANSISTOR C 5706 transistor marking 2a 80 V NPN epitaxial silicon transistor PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    TRANSISTOR C 5706

    Abstract: c 5706 SMD Ic LM339M so do SMD Ic LM339M smd lm339 8 pin ic lm339 datasheet for comparator ic lm339 IC LM339N LM139 APPLICATIONS lm339n circuit diagram
    Text: LM139 LM239 LM339 LM2901 LM3302 Low Power Low Offset Voltage Quad Comparators General Description The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as low as 2 mV max for all four comparators These were designed specifically to operate from a single power supply


    Original     		LM139 LM239 LM339 LM2901 LM3302 TRANSISTOR C 5706 c 5706 SMD Ic LM339M so do SMD Ic LM339M smd lm339 8 pin ic lm339 datasheet for comparator ic lm339 IC LM339N LM139 APPLICATIONS lm339n circuit diagram PDF

    N09A

    Abstract: N08A LMV431AIM5 LMV431 LMV431A LMV431AIZ LMV431IZ OX SOT23-5 switche B18 SOT23-5
    Text: National’s Industry Standard Click For More LMV431 Info LMV431 Click For More LMV431A Info Qualification Package Low-Voltage 1.24V Adjustable Precision Shunt Regulator 3.3V Off-line Switching Regulator SWITCHER To AC Outlet 3.3V Opto. Iso. Feedback Control


    Original     		LMV431 LMV431 LMV431A OT23-5 N09A N08A LMV431AIM5 LMV431AIZ LMV431IZ OX SOT23-5 switche B18 SOT23-5 PDF

    LM3647

    Abstract: LM3621 LM3622 LLP-14 LM3420 LM3620 LP3945 LP3946 Li-Ion Battery Charger SOT23-5
    Text: LP3945/46 Battery-Charging Systems LP3945 battery charging system typical application circuit CHG-IN BATT AC adapter VBSense LP3945 CHG SCL EOC EN To system Li-Ion supply 10 µf or NiMh Diff-Amp BIPB The charger has under-voltage and over-voltage protection as well as an internal 5.6 hour timer


    Original     		LP3945/46 LP3945 LP3945 OT23-5, OT23-5 SO-16 SO-20 LM3647 LM3621 LM3622 LLP-14 LM3420 LM3620 LP3946 Li-Ion Battery Charger SOT23-5 PDF

    570215

    Abstract: No abstract text available
    Text: TEA5702 ADVANCED 2-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR . . . . . . . . PLAY-BACK MODE LOW NOISE AND WIDE BAND AMPLIFIERS FOR 2 HEADS AUTOMATIC OFFSET CANCELLATION BETWEEN THE 2 SELECTED HEADS ONE PLAY-BACK OUTPUT WITHOUT AGC TWO PLAY-BACK OUTPUTS INCLUDING


    Original     		TEA5702 TEA5702 PM-SO20L 570215 PDF

    DIP20

    Abstract: SO20 TEA5702A TEA5702AD
    Text: TEA5702A ADVANCED 2-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA . . . . . . . . PLAY-BACK MODE LOW NOISE AND WIDE BAND AMPLIFIERS FOR 2 HEADS AUTOMATIC OFFSET CANCELLATION BETWEEN THE 2 SELECTED HEADS ONE PLAY-BACK OUTPUT WITHOUT AGC TWO PLAY-BACK OUTPUTS INCLUDING


    Original     		TEA5702A DIP20 TEA5702ADe SO20L DIP20 SO20 TEA5702A TEA5702AD PDF

    Untitled

    Abstract: No abstract text available
    Text: TEA5702A ADVANCED 2-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA . . . . . . . . PLAY-BACK MODE LOW NOISE AND WIDE BAND AMPLIFIERS FOR 2 HEADS AUTOMATIC OFFSET CANCELLATION BETWEEN THE 2 SELECTED HEADS ONE PLAY-BACK OUTPUT WITHOUT AGC TWO PLAY-BACK OUTPUTS INCLUDING


    Original     		TEA5702A DIP20 TEA5702A PM-SO20L PDF

    2SC5706 equivalent

    Abstract: 2sc5706 equivalent transistor 2sc5706 transistor 2sc5706 Transistor 2SC5706 2sc5706 datasheet c90m
    Text: 2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation Mechanical Data:


    Original     		2SC5706 O-252) 25-Aug-05 2SC5706 equivalent 2sc5706 equivalent transistor 2sc5706 transistor 2sc5706 Transistor 2SC5706 2sc5706 datasheet c90m PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation Mechanical Data:


    Original     		2SC5706 O-252) 25-Aug-05 PDF

    TEA5706A

    Abstract: No abstract text available
    Text: TEA5706A ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA RECORD MODE TWO INTEGRATED I/I CONVERTERS WITH ACCURATE CONTROL OF TRANSCONDUCTANCE AUTOMATIC PLAY-BACK/RECORD SWITCHING BY SCANNING OF RECORD SUPPLY PLAY-BACK LOOP INHIBITION


    Original     		TEA5706A TEA5706A PDF

    Untitled

    Abstract: No abstract text available
    Text: TEA5706 ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA RECORD MODE TWO INTEGRATED I/I CONVERTERS WITH ACCURATE CONTROL OF TRANSCONDUCTANCE AUTOMATIC PLAY-BACK/RECORD SWITCHING BY SCANNING OF RECORD SUPPLY PLAY-BACK LOOP INHIBITION RECORD AMPLIFIERS WITH AUTOMATIC


    Original     		TEA5706 PM-SO28 PDF

    1N4148

    Abstract: TEA5706
    Text: TEA5706 ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA RECORD MODE TWO INTEGRATED I/I CONVERTERS WITH ACCURATE CONTROL OF TRANSCONDUCTANCE AUTOMATIC PLAY-BACK/RECORD SWITCHING BY SCANNING OF RECORD SUPPLY PLAY-BACK LOOP INHIBITION RECORD AMPLIFIERS WITH AUTOMATIC


    Original     		TEA5706 1N4148 TEA5706 PDF

    gsm module 900

    Abstract: delta v dcs B100 DLT3201 GSM900 NL-5928
    Text: Preliminary DLT3201 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications FEATURES - Supports dual/triple-band GSM handsets - Small footprint 9mm 10mm and low Profile (1.5mm max.) - InGaP HBT technology - High efficiency: 50% (min.) for GSM900;


    Original     		DLT3201 GSM900 DCS1800/PCS1900 GSM900; DCS1800/PCS1900 DLT3201 NL-5928 FIN-00101, gsm module 900 delta v dcs B100 PDF

    WT5703

    Abstract: WT5705 westinghouse capacitor westcode Inverter Diode hawk* 500v Westinghouse diode westinghouse transistors WT5706 westinghouse 300a Westcode Semiconductors
    Text: WESTCODE S E M I C ON DU CT OR S 41 DE 1 ^ 7 0 ^ 5 5 OODlöOa 7 T - f WESTCODE ® SEMICONDUCTORS - . Technical Publication WT5703/06 Issue 1 February 1981 High Power Transistor Types WT5703 to WT5706 • 150kW Switched Power • 300 Amperes Continuous • 500 Volts Sustaining Voltage


    OCR Scan     		WT5703/06 WT5703 WT5706 150kW 450nt WT5705 westinghouse capacitor westcode Inverter Diode hawk* 500v Westinghouse diode westinghouse transistors WT5706 westinghouse 300a Westcode Semiconductors PDF

    transistor e2w

    Abstract: book TRANSISTOR 2N2222
    Text: For Immediate Assistance, Contaci M Local Salesperson IRR-BWOWW« XTR101 AVAILABLE IN DIE Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • INSTRUMENTATION AMPLIFIER INPUT Low Offset Voltage, 30nV max Low Voltage Drift, 0.75|iV/°C max


    OCR Scan     		XTR101 4-20mA transistor e2w book TRANSISTOR 2N2222 PDF

    lm339a

    Abstract: lm139a LM239A LMI39 LM339AJ LM3302J lm139 LM339 DC lm339a schematic 95ac
    Text: National Semiconductor LM 139/LM239/LM339/LM139A/LM239A/LM339A/ LM2901/LM3302 Low Power Low Offset Voltage Quad Comparators General Description • ■ ■ ■ The LM139 series consists of four independent precision


    OCR Scan     		/LM339/LM139A/LM239A/LM339A/LM2901/LM3302 139/LM239/LM339/LM139A/LM239A/LM339A/ LM2901/LM3302 LM139 TL/H/5706-26 TL/H/5706-29 TL/H/5706-31 lm339a lm139a LM239A LMI39 LM339AJ LM3302J LM339 DC lm339a schematic 95ac PDF

    lm 353

    Abstract: LM339 APPLICATIONS zero crossing lm139 LM339 DC M3302 RETS139X LM 339 application note
    Text: LM139/LM239/LM339/LM2901 /LM3302 Semiconductor National LM 139/LM 239/LM 339/LM 2901/ LM3302 Low Power Low Offset Voltage Quad Comparators General Description The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as


    OCR Scan     		LM139/LM239/LM339/LM2901 /LM3302 139/LM 239/LM 339/LM LM3302 LM139 Z0SSWl/l06ZHl/6 LM139/LM239/LM339/LM2901/LM3302 lm 353 LM339 APPLICATIONS zero crossing LM339 DC M3302 RETS139X LM 339 application note PDF

    MRF449

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com ­ mercial and amateur radio equipment to 30 MHz. •


    OCR Scan     		PDF

    u12m4t

    Abstract: No abstract text available
    Text: COMPONENTS B U R R -B R O W N E OPA5Û1/883B SERIES ] OPA501VM/883B OPA501VM OPA501UM/883B OPA501UM REVISION A JANUARY, 1989 High Current, High Power Military OPERATIONAL AMPLIFIER FEATURES • WIDE SUPPLY RANGE. ± 10 V to ±40V • HIGH OUTPUT CURRENT. ± 10 A Peak


    OCR Scan     		1/883B OPA501VM/883B OPA501VM OPA501UM/883B OPA501UM MIL-STD-883 gre83B U12M4T PDF