TRANSISTOR C 5027 Search Results

Contextual Info: I ^24=5027 0014113 3 MITSUBISHI ADVANCED SCHOTTKY TTL M74F125P/FP/DP i' av.tov c 1 -tV"3 /ic-W K O ^ .La *'*' I HITSUBISHI iDSTL LOGIC} Ü7E QMADRUPt: -^ U F F F R ^ V E DRIVER WITH DESCRIPTION P STATE OUTPUT PIN CONFIGURATION TOP VIEW The M74F125P is a semiconductor integrated circuit

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

Contextual Info: • b3E DG 1S137 037 ■ M IT 3 MITSUBISHI BIPOLAR DIGITAL ICs M 54591P MITSUBISHI DGTL LOGIC 8-UNIT HIGH VOLTAGE 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPION T h e M 5 4 5 9 1 P , 8 -ch an n e l sink driver, consists of 16 NPN PIN CONFIGURATION (TOP VIEW)

600v 400a IGBT driver

Contextual Info: DIM200BSS17-E000 DIM200BSS17-E000 Single Switch IGBT Module PDS5668-1.0 October 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM200WHS17-E000 DIM200WHS17-E000 Half Bridge IGBT Module PDS5662-2.0 October 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5651-3.0 September 2003

Contextual Info: DIM600BSS17-A000 DIM600BSS17-A000 Single Switch IGBT Module FDS5695-1.2 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

Contextual Info: DIM100CHS12-A000 DIM100CHS12-A000 Half Bridge IGBT Module Replace February 2004 version, issue DS5734-1.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5734-2.1 June 2004 KEY PARAMETERS VCES typ

DIM400BSS12-A000

Contextual Info: DIM400BSS12-A000 DIM400BSS12-A000 Single Switch IGBT Module Replaces Dedember 2003 version, issue DS5672-2.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5672-3.0 February 2004 KEY PARAMETERS VCES

DIM400WKS12-A000

Contextual Info: DIM400WKS12-A000 DIM400WKS12-A000 IGBT Chopper Module - Upper Arm Control DS5779-1.0 May 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V

DIM400WHS12-A000

Contextual Info: DIM400WHS12-A000 DIM400WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5689-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5689-3.0 May 2004 KEY PARAMETERS VCES typ

IC 21069

Contextual Info: DIM150CHS17-E000 DIM150CHS17-E000 Half Bridge IGBT Module PDS5716-1.2 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

dynex igbt 1200v

Abstract: DIM300WHS12A000
Contextual Info: DIM300WHS12-A000 DIM300WHS12-A000 Half Bridge IGBT Module PDS5691-1.4 January 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 300A

transistor 9003

Contextual Info: DIM200WHS12-A000 DIM200WHS12-A000 Half Bridge IGBT Module Replaces DIM200MHS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5671-2.2 December 2003 KEY PARAMETERS VCES typ VCE(sat)* (max) IC

DIM300BSS17-E000

Contextual Info: DIM300BSS17-E000 DIM300BSS17-E000 Half Bridge IGBT Module PDS5720-1.2 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM100WHS12-A000

Abstract: dynex
Contextual Info: DIM100WHS12-A000 DIM100WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5735-1.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5735-2.0 May 2004 KEY PARAMETERS VCES typ

IFM VS 0100

Contextual Info: DIM400BSS17-E000 DIM400BSS17-E000 Single Switch IGBT Module Replaces October 2003, version PDS56701.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5670-2.1 December 2003

DIM375WHS06-S000

Contextual Info: DIM375WHS06-S000 DIM375WHS06-S000 Half Bridge IGBT Module Replaces version December 2003, issue DS5675-2.2 FEATURES DS5675-3.3 February 2004 KEY PARAMETERS • Low Forward Voltage Drop VCES 600V ■ Isolated Copper Baseplate VCE sat * (typ) 2.1V IC (max) 375A

Contextual Info: DIM400WHS17-E000 DIM400WHS17-E000 Half Bridge IGBT Module Replaces October 2003, version PDS5665-1.1 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5665-2.1 December 2003

DIM400PBM17-A000

Contextual Info: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information DS5524-1.2 March 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DIM400BSS17-A000

Contextual Info: DIM400BSS17-A000 DIM400BSS17-A000 Single Switch IGBT Module FDS5674-2.2 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

Contextual Info: DIM100CHS17-A000 DIM100CHS17-A000 Half Bridge IGBT Module PDS5709-1.5 January 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

Contextual Info: DIM100CHS17-A000 DIM100CHS17-A000 Half Bridge IGBT Module Replaces February 2004 version, issue PDS5709-1.6 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate PDS5709-2.1 June 2004 KEY PARAMETERS VCES typ

Contextual Info: DIM100CHS17-A000 DIM100CHS17-A000 Half Bridge IGBT Module PDS5709-1.6 February 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V