TRANSISTOR C 460 Search Results

F1K marking

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature

BCX70J

Abstract: 07 le 90
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BCX70J GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation Storage Tem perature

BCW General Purpose Transistor

Abstract: l9902
Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation

L9902

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BCX70J GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature

LC marking code transistor

Abstract: transistor marking code BCW61A BCW61 BCW61B BCW61C BCW61D TRANSISTOR BCW61 marking code ER transistor
Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BCW60A

Abstract: BCW60D BCW60B BCW60C transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor
Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

Contextual Info: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m ltte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

BCX71J

Contextual Info: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

4420 Transistor

Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

BC446

Abstract: TRANSISTOR C 460 BC445 WT transistor
Contextual Info: DESCRIPTION BC445 BC446 C .*' o SILICON EPITAXIAL TRANSISTOR T O W :n BC445 NPN and BC446 (PNP) are silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

BCW60D

Abstract: fairchild SOT-23 Mark PC BCW60A BCW60B BCW60C sot 23 mark AD MARKING AB FAIRCHILD
Contextual Info: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

Analog devices TOP marking Information

Abstract: marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23
Contextual Info: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO

marking B22 sot-23

Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086
Contextual Info: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO

6R160C6

Abstract: IPW60R160C6 TRANSISTOR SMD MARKING CODE infineon cool MOSFET dynamic characteristic test infineon MOSFET parameter test IPA60R160C6 IPB60R160C6 IPP60R160C6 SMD mosfet MARKING code TC JESD22
Contextual Info: M OS F E T Metal Oxide Semiconductor Field Effect Transistor Coo l MOS C 6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.0, 2009-09-25 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6

BC449

Abstract: Bc449 transistor
Contextual Info: BC449 NPN SILICON TRANSISTOR DESCRIPTION 04.68 0.18 BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 (0.18) TO-92F -I— I- - 0.4 E B c \_ [(0 .0 1 6 )

transistor mark BA

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

BCW61A

Abstract: transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D ks5086
Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Cllector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25t: C haracteristic Collector-Base Voltage Collector-Em itlef Voltage Emitter-Base Voltage Collector Currant Collector Dissipation Storage T emperature

Contextual Info: BCX70J NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: C h a ra cte ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BCW61A

Abstract: marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature