TRANSISTOR C 459 Search Results

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

transistor 224-1 base collector emitter

Abstract: transistor 0588
Contextual Info: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector

transistor s11 s12 s21 s22

Abstract: NE856M02-T1-AZ NE856M02
Contextual Info: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BCY69

Abstract: BCY 69 transistor 468
Contextual Info: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation

0733

Contextual Info: BFP 81 NPN Silicon RF Transistor • For low -noise am plifiers up to 2 G H z at collector currents from 0.5 to 25 mA. E C E C C -ty p e in preparation: C E C C 50002/. E E S D : E lectro static d isch arg e sensitive device, observe handling precautions!

PS2532

Abstract: ps2532 optocoupler
Contextual Info: N E C h ig h c o l l e c t o r t o e m it t e r VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES ’'2’'4. ' ' ' FEATURES_ DESCRIPTION_ • PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled

Contextual Info: What H E W L E T T m in M P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FAI L4L M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES P A C K A G E D IM E N S IO N S in millimeters • Resistors B u ilt-in TY PE R, = lO k f t R 2 = 22 k ß • C o m plem entary to F N 1 L 4 L

LEI-4

Abstract: Mitsubishi transistor ve32
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE j QM200DY-HB 1Ic Collector c u rre n t.200A •V c e x Collector-em itter • hFE DC current g am . 750 . v o lta g e 600V

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

nec hf 324

Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF am plifier with an operation on the low supply

TRANSISTOR 536

Abstract: transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538
Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO -220 • Complement to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B ase V o lta g e Symbol

c 1685 transistor

Abstract: ic ca 747 transistor NEC D 822 P
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 LOW DISTORTION FIGURE: IM 2 = 59 dB TYP at V c e = 10 V, Ic = 50 mA IM3 = 82 dB TYP at V c e = 10 V , Ic = 50 mA

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

bsp106

Abstract: 3fc relay transistor marking B5 UCB756 USB002 transistor marking CS 712 transistor 459 transistor transistor C 459
Contextual Info: Philips Components Data sheet status Product specification date of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES SYMBOL • Very low RDS on • Direct interface to C-MOS, TTL, etc. • High-speed switching

AM/SSC 9500 ic data

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Contextual Info: N ational J u ly 1 9 9 6 S e m ic o n d u c t o r ” NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor G e n e ra l D e s c r ip tio n F e a tu re s T he s e N -C h a n n e l e n h a n c e m e n t m o d e e ffe c t tra n s is to rs a re p ro d u c e d

EM 4093 007

Abstract: nec 14312 transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA834TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V , Ic = 7 mA

Contextual Info: Philips Semiconductors bbS3T31 00B3&53 IflS « A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 N AMER PHILIPS/DISCRETE FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL v DS • High-speed switching

IRFI840G

Contextual Info: PD - 97114A IRGI4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC = 11A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP626,-2,-4 TLP626 P R O G R A M M A B L E CO N TR O LLER S A C / D C -IN P U T M O D U L E U n it in mm T E L E C O M M U N IC A T IO N , 3 Tl.1’626 Weight : 0.26g T he TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared

a 1757 transistor

Abstract: A 1952 transistors a 1757 transistor 2SA 2SC5103 transistors 2SA rohm 2sa 1757 EM 5103
Contextual Info: 2S A 1 952 / 2 S A 1 906 / 2S A 1 757 Transistors I 2 S C 5 1 03 / 2 S C 45 96 High-speed Switching Transistor 2 S A 1 952 / 2 S A 1 906 / 2 S A 1 757 •A b s o lu te maximum ratings Ta—2813 •F e a tu re s 1) 2) 3) 4) High speed sw itching (tf ! Typ. 0 A 5 ^ s at l c = —3A )