TRANSISTOR C 373 Search Results

fairchild micrologic

Abstract: D9109 10-JK 9110 F 9109
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit

transistor 131 8D

Abstract: transistor k 3728 QBE+61.2+dp2
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

Contextual Info: FS 50 R 12 KF Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,068 R th J C DC, pro Zweig / per arm 0,410 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 50

Contextual Info: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and

CSA1012

Abstract: CSC2562
Contextual Info: CSA1012, CSC2562 CSA1012 CSC2562 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR High Current Switching Applications •E oa ai DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1,40 3,75 3.88 2,29 2.79 2.54 3.43 0,56 12.70 14,73 6,35

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

darlington pair transistor 1A

Abstract: ECG904 alu schematic circuit with transistor Darlington pair MHO16 BT 156 transistor
Contextual Info: PHILIPS E C G INC bbSSÌHfl 000350^ t 17E D ECG904 GENERAL-PURPOSE TRANSISTOR ARRAY semiconductors DIMENSIONAL OUTLINE D im e n sio n s In In c h e s and m illim eters Fof-Low -Pow sr Applications at Frequencies from D C Through the V H F Range FEATURES •

2N3738

Abstract: 3302N
Contextual Info: * 2 N 3738 NPN SILICON TR AN SISTO R , D IFFU SED M ESA TRANSISTOR NPN SILICIUM, MESA DIFFUSE Preferred device Dispositif recommandé L F large signal power amplification Amplification B F grands signaux de puissance 225 V v C EO High voltage switching Commutation haute tension

al 232 nec

Abstract: NE64400 NE644 NE64408 S21E
Contextual Info: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors

Contextual Info: M &CÔM m an A M P com pany RF MOSFET Power Transistor, 20W, 28V 2 - 1 7 5 MHz DU2820S Features • • • • • N-Channel Enh ancem en t Mode Device DMOS Structure I.ower C apacitances for Broadband O peration High Saturated O utput Pow er I.ower Noise Figure Than Bipolar Devices

AM/SSC 9500 ic data

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

NEC 2705 L 107

Abstract: IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The N E32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

The Japanese Transistor Manual 1981

Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

transistor kd 2059

Abstract: pa 2030a kd 2059 SANYO SS 1001 2SC4523 MARKING 2S SMA
Contextual Info: SANYO S E M I C O N D U C T O R CORP 55E D 7^707^ OD0.71 1 1 ö r-3S~n 2SC4523 ♦ NPN Epitaxial Planar Silicon Transistor 2044 • High-Speed Switching Applications 3142 F e a tu re s . Adoption o f F B E T , M BIT processes • Large current capacity •Low collector-to-emitter saturation voltage

2sc372

Abstract: transistor 2sC372 2SC372Y 2SC372-Y 2SC372 transistor 2SC373 NPN 2sc372 transistor 2sc373 2SC37 2SC372 2SC373
Contextual Info: i/ 'J D ^ N P N It ^ s / ^ J W B h ^ ^ ^ C P C T B Ä SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS O o H igh Frequency A m p lifie r A p p lic a tio n s U n i t in m m Low F r e q u ö n c y A m p l i f i e r A p p l i c a t i o n s M A X I M U M RATINGS

2SC373

Abstract: transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372
Contextual Info: 2SC3 2 G 2 / U D > N P N Z t i ^ 5 / ? ;W B h 5 > 5 ;^ P C T S S C SILICON NPN EPITAXIAL TRANSISTOR ( PCT PROCES^^ 2S c 3 3 G O O a f t ! # « yf- INDUSTRIAL APPLICATIONS o H ig h Frequency A m p li fie r A p p lic a t io n s o H igh Speed S w itc h in g A p p lic a t io n s

702 TRANSISTOR

Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE

Contextual Info: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor

Contextual Info: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23

3N160

Contextual Info: TYPE 3N160 P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTOR B U L L E T IN I NO . D L -S 7011149, M A R C H 1970 E N H A N C E M E N T -T Y P E t M O S S IL IC O N T R A N S IS T O R I For Applications Requiring Very High Input Impedance, Such as

ic ntp- 3000

Abstract: IIH13 Scans-0088096
Contextual Info: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.