TRANSISTOR C 3331 Search Results

Contextual Info: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz

Contextual Info: PD - 91723 International I R Rectifier IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, ts c =10ns, V c c = 3 6 0 V , T j = 125°C,

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

AT415

Contextual Info: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

Contextual Info: Provisional Data Sheet No. PD - 9.1715 International I R Rectifier IRFE230 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798U HEXFET TRANSISTOR JANTXV2N6798U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Summary 200Volt, 0.40Q, HEXFET T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts

Super-247 Package

Abstract: IRG4PSC71UD
Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

diode lt 247

Abstract: IRG4PSC71UD TB diode 1084 GE
Contextual Info: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

IRG4BC40W

Contextual Info: PD - 9.1654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: Provisional Data Sheet No. PD - 9.1722 International IQ R Rectifier IRFE210 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N -C H A N N E L 200Volt, 1.5Q, HEXFET Product Summary T he le ad less chip c a rrie r LC C p a cka g e re p re se n ts

Contextual Info: Provisional Data Sheet No. PD-9.1416 International S R e c tifie r IRHNA7064 IRHNA8064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL M EG A RAD HARD 60 Volt, 0.015 fi, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

Contextual Info: Provisional Data Sheet No. PD - 9.1719 International I R Rectifier IRFE430 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:MIL-PRF-19500/557] N -C H A N N E L 500Vo It, 1.50i2, HEXFET Product Summary T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts

OZ930

Abstract: IRG4PC50W *g4pc50w
Contextual Info: PD - 9.1657A IRG4PC50W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

AN-994

Abstract: IRG4BC30W-S
Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

ic AM 12A

Abstract: AN-994 IRG4BC30W-S
Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4PC30W

Contextual Info: PD - 9.1628 IRG4PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4BC30W

Abstract: AN-994 IRG4BC30W-S
Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

*g4pc50w

Abstract: 55A TO-247AC oz829 IRG4PC50W
Contextual Info: PD - 9.1657 IRG4PC50W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4BC30W

Contextual Info: PD - 9.1629 IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4PC40W

Contextual Info: PD -9.1656B IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4IBC30UD

Contextual Info: PD- 91753 PRELIMINARY IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage … • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating

IGBT collector voltage 5kV

Abstract: IRG4IBC20UD
Contextual Info: PD -91752 PRELIMINARY IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage … • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating