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    TRANSISTOR C 2856 Search Results

    TRANSISTOR C 2856 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2856 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2856S30 TECHNOLOGIES, INC. Pulsed Medical Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor part number IB2856S30 is designed to operate in class C mode. This common base device supplies a minimum of 30 watts of peak pulse power under the conditions of 12 s pulse width


    Original     		PDF IB2856S30 IB2856S30 IB2856S250 IB2856S30-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Mouse Sensor Kit (#28560) The Parallax Mouse Sensor is a module in kit form which, when assembled, provides the tracking


    Original     		PDF pll16x

    TRANSISTOR DNH

    Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
    Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number


    Original     		PDF 30MIN. 15MIN. 17MIN. 14MIN. TRANSISTOR DNH PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector

    RTL 602 W

    Abstract: IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002
    Text: ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! "#$%#!&"'! $*+*,*-(,! ! ./012341! (567893:! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! (;<),!


    Original     		PDF I/08/4! 65134B 086C3 9E73B 518D9' I5134! M0934N 58D2BD RTL 602 W IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002

    pin diagram of 74163

    Abstract: 2sc372 7404 pin configuration transistor 2SC372 pin diagram of 7404 equivalent transistor of F2B transistor pdf 2sc372 RD13B 7404 pin configration 74107 pin diagram
    Text: This version: Jan. 1998 Previous version: May. 1997 E2P0059-37-X2 ¡ electronic components OPA256C–1 IMAGE SENSORS OPA256C–1 Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, one-dimensional diode array comprised of PN junction photodetector


    Original     		PDF E2P0059-37-X2 OPA256C OPA256C-1 256-bit, 2SC372 1S2075K 2SC169 pin diagram of 74163 2sc372 7404 pin configuration transistor 2SC372 pin diagram of 7404 equivalent transistor of F2B transistor pdf 2sc372 RD13B 7404 pin configration 74107 pin diagram

    OPA2048CA

    Abstract: 200w transistor amplifier circuit 200w power AB amplifier circuit diagram 300w transistor power amplifier circuit diagram RD13B 2SC372 F2B transistor 200w power amplifier circuit diagram CCDs Charge Coupled Devices equivalent transistor of F2B transistor
    Text: This version: Jan. 1998 Previous version: May. 1997 E2P0060-37-X2 ¡ electronic components OPA2048CA IMAGE SENSORS OPA2048CA Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA2048CA is a 2,048-bit, one-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a two-phase clock pulse,


    Original     		PDF E2P0060-37-X2 OPA2048CA OPA2048CA 048-bit, RD13BL DS0026CN 2SC372 200w transistor amplifier circuit 200w power AB amplifier circuit diagram 300w transistor power amplifier circuit diagram RD13B 2SC372 F2B transistor 200w power amplifier circuit diagram CCDs Charge Coupled Devices equivalent transistor of F2B transistor

    OPA256C-1

    Abstract: 7404 gate diagram 7404 pin configration CCDs Charge Coupled Devices RD1313 2SC372 equivalent 2SC372 transistor diode 9806 pin diagram of 74163 74123 time delay
    Text: This version: Jan. 1998 Previous version: May. 1997 E2P0059-37-X2 ¡ electronic components OPA256C–1 IMAGE SENSORS OPA256C–1 Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, one-dimensional diode array comprised of PN junction photodetector


    Original     		PDF E2P0059-37-X2 OPA256C OPA256C-1 256-bit, 2SC372 1S2075K 2SC169 7404 gate diagram 7404 pin configration CCDs Charge Coupled Devices RD1313 2SC372 equivalent 2SC372 transistor diode 9806 pin diagram of 74163 74123 time delay

    intel 945 motherboard schematic diagram

    Abstract: intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2
    Text: ORDER NO. CPD0111006C1 Personal Computer CF-07 This is the Service Manual for the following areas. M …for U.S.A. Model Number Reference The following models are numbered in accordance with the types of CPU and HDD etc. featured by product. Model No. CF-071 Z 2 ZY3 4


    Original     		PDF CPD0111006C1 CF-07 CF-071 intel 945 motherboard schematic diagram intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2

    TPL621

    Abstract: MCP3041 PC817 SOP-4 cosmo 817 PC923 APPLICATION NOTES opto coupler TLP250 MCP3040 mcp3031 tpl621-2 TLP250 MOSFET DRIVER application note
    Text: Optoelectronic Products Reference Guide 2007-2008 1 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. www.toshiba.com/taec 1 Toshiba is proud to provide this comprehensive optoelectronic products reference guide. As one of the world’s largest manufacturers of optoelectronic products,


    Original     		PDF AQS210PSX AQS210PSZ, TLP270G TPL621 MCP3041 PC817 SOP-4 cosmo 817 PC923 APPLICATION NOTES opto coupler TLP250 MCP3040 mcp3031 tpl621-2 TLP250 MOSFET DRIVER application note

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    transistor G28

    Abstract: Transistor g29 ZM100 FERRANTI ELECTRONICS SD16 ZM110 ZM210 2856K
    Text: ELECTRICAL CHARACTERISTICS c PHOTO TRANSISTOR ELECTRICAL CHARACTERISTICS Illum ination Dark Leakage Dice Type ZM100 ZM110 ZM210 V ceo V cB O Min. Current M ax. V V ma 35 35 35 35 35 35 1.0 0.025 0.10 Min. < M in. Sensitivity (Note 1) @ V c e @ lc V Max.


    OCR Scan     		PDF ZM100 ZM110 ZM210 transistor G28 Transistor g29 FERRANTI ELECTRONICS SD16 2856K

    Untitled

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR_ IWqbB D 3?-^ DODOBbb g M C E N *7 ’r € ris. €©»£?&! MPQ2906 MPQ2907 ' i€illi£0n{3yet0i,Corp. e&sitreii.- PNP SILICON QUAD TRANSISTOR semiconductor sor^. Central Semiconductor Corp. JEDEC TO-116 CASE 145 Adams Avenue


    OCR Scan     		PDF MPQ2906 MPQ2907 O-116 MPQ2906, MPQ2907 MPQ2906) lc-10mA MPQ2907) 150mA

    plessey ttl

    Abstract: geometry FERRANTI ELECTRONICS I/SMD transistor g29
    Text: PLESSEY SEMICOND/DISCRETE TS 7220533 PLESSEY SEMICOND/DISCRETE D eT| 72 E0 S3 3 D00S002 4 ^ 95D 05002 T -V f- o l ELECTRICAL CHARACTERISTICS (c PHOTO TRANSISTOR ELECTRICAL CHARACTERISTICS Dice Type ZM100 ZM110 ZM210 V CE0 Min. V 35 35 35 V cbo Min. V 35 35


    OCR Scan     		PDF D00S002 ZM100 ZM110 ZM210 ODGSD11 plessey ttl geometry FERRANTI ELECTRONICS I/SMD transistor g29

    PS101

    Abstract: S101
    Text: A C INTERFACE INC IDE D | 0 0 5 3 3 0 3 OOOOMtiO 1 | PS101 Sfato STANLEY PHOTO TRANSISTOR • FEATURES 1 High photo current (Typ. 6 m A at Ee = 1 m W /cm 2 ) (2) High directivity (3) High reliability. High endurance Package Dimensions ÿ4.6-fc0.1 Unittnrmi


    OCR Scan     		PDF PS101 PS101 S101

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 214 SFH 214 FA Area not flat c\l in CD CD oo CD Cathode Diode GEX06630 Collector (Transistor) CM Ifi CD CO 'S CD Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    OCR Scan     		PDF GEX06630

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA CO CM Û O CO Area not flat 0.6 0 .4 Cathode (Diode Collector (Transistor) GEX06260 (O (O (O C\J Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    OCR Scan     		PDF GEX06260

    CM508

    Abstract: No abstract text available
    Text: I I S T A N L E Y CO INC 4b7fll5ö G G D 1 S D T 3 • 2SE D FS511 Stop x hrm-Gi STANLEY PHOTO TRANSISTOR Package Dimensions —Unit : mm ■ FEATURES , 1 High accuracy by use of special resin package with centered chip (2) High photo current (Typ. 2.5m A at Ee= 1 0 m W /c m 2)


    OCR Scan     		PDF FS511 FC-101 FC-101 1t781SÍ CM508

    transistor k 2843

    Abstract: transistor z5t 2SC2832
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF

    317 TRANSISTOR

    Abstract: OF IC 317 ML 317 WPDT-317
    Text: Photo Transistor Waitrony M odule No.: W PD T-317 1. G eneral D escription: The WPDT-317 is a high output NPN photo darlington transistor mounted in a clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.


    OCR Scan     		PDF WPDT-317 WPDT-317 317 TRANSISTOR OF IC 317 ML 317

    transistor 1052

    Abstract: WPDT-317D photo darlington sensor Rise time of photo transistor p317d
    Text: Photo Transistor Waitrony Module No.: WPDT-317D 1. General Description: The WPDT-317D is ; output NPN photo dai transistor mounted in an end black epoxy package. This photo darlington transistor narrow angular response. Dimensions 2. Features > > ^ > Compact 03mm


    OCR Scan     		PDF WPDT-317D WPDT-317D Temper317D transistor 1052 photo darlington sensor Rise time of photo transistor p317d

    waitrony

    Abstract: WPDT-270 photo darlington sensor
    Text: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.


    OCR Scan     		PDF WPDT-270 WPDT-270 PDT-270 waitrony photo darlington sensor

    733HC

    Abstract: CCDs Charge Coupled Devices tr4l 2SC372 OPA2048CA QPA2048CA photo transistor array
    Text: OKI electronic QPA2 0 4 8 CA com ponents Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA2048CA is a 2,048-bit, 1-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a 2-phase clock pulse, transfer pulse, and reset


    OCR Scan     		PDF OPA2048CA_ OPA2048C 048-bit, OPA2048CA OPA2048CA OPA2Q48CA b724240 733HC CCDs Charge Coupled Devices tr4l 2SC372 QPA2048CA photo transistor array

    CCDs Charge Coupled Devices

    Abstract: RD13B
    Text: l:2[-’! 05^-16-92 OKI electronic components OPA256C-1_ Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, one-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices). By using a two-phase clock pulse, transfer pulse, and


    OCR Scan     		PDF OPA256C-1 OPA256C-1 256-bit, PA256C-1 RD13BL tiPC159A CCDs Charge Coupled Devices RD13B

    CCDs Charge Coupled Devices

    Abstract: OPA2048CA uPD416
    Text: E2POOM-I6-92 O K I electronic components OPA2Q48CA Self-Scanning Line Sensor GENERAL DESCRIPTION TheO PA 2048C A isa2,048-bit, one-dimensional diodearray comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a two-phase d o ck pulse, transfer pulse, and


    OCR Scan     		PDF E2POOM-I6-92 OPA2Q48CA 2048C 048-bit, OPA2048CA CCDs Charge Coupled Devices OPA2048CA uPD416