TRANSISTOR C 2705 Search Results

Transistor marking BQ

Abstract: marking BQ BQ MARKING transistor BQ
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03

TRANSISTOR FQ

Abstract: transistor marking fq FS transistor marking marking FQ fq transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPA2029NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION PNP Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPC5658NND03

Transistor marking BQ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03

2SA1585E

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)

2SC4115E

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)

Contextual Info: 2SC4617 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES Low Cob: Cob=2.0pF Typ A L Complement to 2SA1774 3 3 C B Top View Collector 1 3 C 3 1 K 2 E 2 1 D Base

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

csc4115bc

Abstract: CSC4115
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL

2SC4115S

Contextual Info: 2SC4115S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92S FEATURES 1.5 ±0.2 3.1±0.2 4.0±0.2 Power dissipation PD: 0.3 W Tamb=25 I CM: 15.3 ±0.2 Collector current

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL

T272i

Abstract: 2SC 5802 2SD1961 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098
Contextual Info: ROHM CO L T » h7 40E /Transistors » Bi 7 Û S Ô ci ci cî OOObDST ö «RHM 2SD1961/2SD1962M/2SD2097/2SD2098 2 S D 1 S 6 1 /2 S D 1 962M S S 2 S D 2 C 9 7 /2 S ÎD 2 C 9 3 Vt>4V:'A'vJ|*J' NPN y y a > Epitaxial Planar NPN Silicon Transistor 1W f i xt'iiEl/'Dlm ensions Unît; mm

2SB1460

Contextual Info: 2SB1460 h 7 > y ^ ^ //Transistors I e £ * V 7 j u7‘ I' - P NP y 'J I] > h -7 > y Epitaxial Planar PN P Silicon Transistor f é U iM ll ^ J ílí lf f l/ L o w Freq. Power Amp. • • « ft Dimensions Unit : mm 1) V c e (sat) V c e (sat)=— 0.2V(Typ.)

2SD2150

Abstract: transistor marking 2a marking CFR
Contextual Info: 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE SAT =0.5V(Max.) for IC / IB=2A/0.1A

MARKING W1 AD

Abstract: transistor BC 153
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 9AW TO-92 BCE MARKING : CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

CP666

Abstract: CP640 Crystalonics FERROXCUBE 1041t060 Crystalonics Cp666 trifilar transistor fet N-Channel RF Amplifier CP664 CP665 CRY664UA
Contextual Info: Web site: WWW.Crystalonics.com Phone: 781 270-5522 R R O A n R A M n RF FF T 1 X \ y / \ l—S k • / / \ 1 1 l_ S 1 X 1 1 L . 1 N-CHANNEL FIELD EFFECT TRANSISTOR niun u t inmivu ^ n Mi N u c n r minu v n r /-uviruiricr» GEOMETRY 424 FOR USE IN COMMON GATE CONFIGURATION

TRANSISTOR 2688

Abstract: CE 2711 2SA1150 2SC2682
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC4326LK

Abstract: J100 T146 T147
Contextual Info: 2SC4326LK h "7 > v J* £ /Transistors 2 S C 4 3 2 6 L K Epitaxial Planar NPN Silicon Transistor RF 7. -f y Switch Usage • W ërJ’JÎBI/Dim ensions Unit : mm 2) 3) R F i V 2 P - i > ¥ « R F ^ - f y ^ f f l t 0.B±0.1 L T £ S „ a T«m • Features

2SA1455K

Abstract: 2SC3722K T146 T147 OA95
Contextual Info: 2SA1455K K ~7 > y 7s £ /'Transistors P N P '> U n > 2 S A 1 4 5 5 K Epitaxial Planar PNP Silicon Transistor £ i*E ftJ l& & g i£ ^ ig itiffl/H ig h Voltage Low Freq. Low Noise Amp. • ftft 1 » W E T * S o Vceo = -1 2 0 V 2) N F=0.2dB Typ.) (at V c e = —6V, lc = - 1 0 0

PS2705-4

Contextual Info: HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER PS2705-1 P S 2705-2 PS2705-4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV:3.75 k Vr.m.s. MIN • SOP SMALL OUT-LINE PACKAGE • ISOLATED CHANNELS PER EACH PACKAGE

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2705-1 ,PS2705-2,PS2705-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he P S 2705-1, P S 2705-2, P S 2 7 0 5 -4 are o p tica lly c o u p le d iso lato rs con ta in in g tw o G aA s light em ittin g d iod es and

NEDA 1604 6F22 006P

Abstract: NEDA 1604 6F22 2705B operating manual for NEDA 1604 6F22 JIS 006P battery NEDA 1604 battery 6f22
Contextual Info: Data sheet Auto Ranging Tool Kit DMM Model 2705B Specifications model 2705B A ut o/ Manual Ranging Select between Auto or Manual ranging The 2705B is a full-featured auto-ranging DMM that combines performance, value and functionality. The 3400 count LCD can display resistance values up to