TRANSISTOR C 2688 Search Results

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

c 2688 nec

Abstract: TRANSISTOR 2688 C 2688 video output transistor transistor C 2688
Contextual Info: NEC S IL IC O N ELECTRON OEVICE T R A N S IS T O R 2S C 2 6 8 8 NPN SILICON TRIPLE DIFFUSED TRANSISTOR VIDEO OUTPUT TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2688 is designed fo r use in C olor T V chrom a o u tp u t circuits. in m illim e te rs inches

C2688

Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
Contextual Info: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature

transistor pnp a110

Abstract: free transistor and ic equivalent data transistor pnp a110 EQUIVALENT
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125

BD249C equivalent

Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125

bd249c equivalent

Abstract: C2688 free transistor and ic equivalent data BD249C MJE180 20 L2
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125

bd249c equivalent

Abstract: c2688 c2688 transistor tRANSISTOR c2688 BD249C
Contextual Info: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W

bd249c equivalent

Contextual Info: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W

TRANSISTOR 2688

Abstract: CE 2711 2SA1150 2SC2682
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

ATF-26884-STR

Abstract: ATF-26884 ATF-26884-TR1
Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz • High Gain: 9.0 dB Typical GSS at 12␣ GHz housed in a cost effective microstrip package. This device is

Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator

ST Z0 103 MA

Contextual Info: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging

ATF-26884

Abstract: zo 103 ma ATF-26884-STR ATF-26884-TR1
Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator

ATF-26884

Contextual Info: Whn1 H E W L E T T 1HEM PA C K A R D ATF-26884 2-16 GHz General Purpose Gallium Arsenide FET 84 Plastic Package Features • High Im a x : 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • High Gain: 9.0 dB typical Gss at 12 GHz •

TO-253-AA

Abstract: Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240
Contextual Info: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V

ADM6315-31D4ARTZR7

Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
Contextual Info: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V

transistor TO Outline Dimensions

Abstract: transistor d 140 g
Contextual Info: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V

Contextual Info: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V

transistor C 2240

Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
Contextual Info: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC GND VREF ADM6315 RESET RESET CIRCUITRY 00081-001 APPLICATIONS Microprocessor systems Controllers Intelligent instruments Automotive systems Safety systems

SOT-143

Abstract: ADM6315 ADM6315-31D1ART-RL ADM6315-31D1ART-RL7 ADM6315-44D1ART-RL ADM6315-44D1ART-RL7 ADM6315-45D1ART-RL ADM6315-45D1ART-RL7 ADM6315-46D1ART-RL ADM6315-46D1ART-RL7
Contextual Info: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES Specified over Temperature Low Power Consumption 5 ␮A Typ Precision Voltage Monitor of Voltages from 2.5 V to 5 V at 100 mV Increments Reset Assertion Down to VCC > 1 V Reset Timeout Periods: 1 ms, 20 ms, 140 ms,

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

TIP36C EQUIVALENT

Abstract: transistor tip 36c C 2688 transistor 36c tip 36c transistor tip 35c tip 36c transistor npn tip 5100 TIP35C EQUIVALENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Com plem entary Silicon High-Pow er TVanslstors TIP 35B * . . . for general-purpose power amplifier and switching applications. TIP 35C * • • • • PNP 25 A Collector Current Low Leakage Current — IcE O = 1 -0 mA @ 30 and 60 V

c2688 transistor

Abstract: TIP35C EQUIVALENT transistor tip35c test motorola tRANSISTOR c2688 MJE180 MOTOROLA MJE180 TIP35A TIP35B TIP35C TIP36A
Contextual Info: MOTOROLA Order this document by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • •

motorola tRANSISTOR c2688

Abstract: c2688 TIP35C EQUIVALENT c2688 transistor TIP35C transistor tip35c motorola tRANSISTOR c2688 MJE180 tip35 TIP35C
Contextual Info: MOTOROLA Order this document by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • •