TRANSISTOR C 2290 Search Results

IRF1010 E DATASHEET

Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

swiching transistor

Abstract: 9561 600v 8A ultra fast recovery diode to220
Contextual Info: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRF1010

Abstract: IRG4BC30FD1 TO220AB IGBT
Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

555 triangular wave

Abstract: IRG4BC30FD1PBF
Contextual Info: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

smd transistor js

Abstract: smd transistor gs f BSH102 smd transistor 608
Contextual Info: Product specification Philips Semiconductors N-channel enhancement mode MOS transistor BSH102 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL • High-speed switching 1 • No secondary breakdown 2 g s DESCRIPTION source • Direct interface to C-MOS, TTL etc.

Contextual Info: Green Product SDP F 12N06 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 12A 0.61 @ VGS=10V Rugged and reliable.

TEXAS 2N3055

Abstract: 2N3055 transistor 2N3055 2N3055 silicon
Contextual Info: TYPE 2N3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER-AMPLIFIiR APPLICATIONS • 115 W a t 25°C Case T e m p e ra tu re • Max lc of 15 A • Min fhf* of 20 kHz * m e c h a n ica l d a ta ALL JEDEC TO-3 D IM EN SIO N S A N D N O TES ARE APPLICABLE

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,

2N2369AU

Contextual Info: MSR2N2369AUA Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUA 100 Krad 100 Krad DESCRIPTION This RHA level high speed NPN switching transistor, 2N2369A in a UA package, is ideal to

Contextual Info: MSR2N2907AUA Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUA 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UA package, is ideal to drive

Contextual Info: MSR2N2222AUA Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222AUA device in a UA package, is ideal to

Contextual Info: MSR2N3700UB Screened Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700UB 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a UB and UBC package,

Contextual Info: MVR2N2222AUB / UBC Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic

2N2907AUB

Contextual Info: MSR2N2907AUB / UBC Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUB 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive

Contextual Info: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic

Contextual Info: MSR2N3700 Qualified Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a TO-206AA package,

Contextual Info: MSR2N2369AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUB 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to

Contextual Info: MSR2N2222A L Qualified Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222A in a TO-206AA package, is ideal to

Contextual Info: MVR2N2222A L Qualified Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222A device in a TO-206AA package, is

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

transistor t 2190

Abstract: 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP
Contextual Info: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 6 B F R 7 4 0 L 3 U l tr a Lo w N o i s e S i G e : C R F T r an s i s t o r a s 2 1 1 0 - 21 7 0 M H z U M T S L o w N o i s e A m p l i fi e r R F & P r o t e c ti o n D e v i c e s