TRANSISTOR C 2001 Search Results

KTA701E

Contextual Info: SEMICONDUCTOR KTA701E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 6 2 5 3 4 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.

KTA501E

Contextual Info: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 2 DIM A 5 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.

KTC601E

Contextual Info: SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 2 DIM A 5 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.

16 pin diagram of uln 2003

Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
Contextual Info: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington

100 watt transistor

Contextual Info: 2001 1.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor

transistor s11 s12 s21 s22

Abstract: NE856M02-T1-AZ NE856M02
Contextual Info: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor

E67349

Abstract: TLP630
Contextual Info: TO SH IBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm A C/D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode

an5296

Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
Contextual Info: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a

sot 23 mark AD

Abstract: BCW60A BCW60B BCW60C BCW60D
Contextual Info: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

Analog devices TOP marking Information

Abstract: marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23
Contextual Info: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO

marking B22 sot-23

Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086
Contextual Info: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO

2015M

Abstract: 2015M-2
Contextual Info: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed

FZT491A

Abstract: FZT591A transistor marking 2A H DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE sat = 350m PART MARKING DETAIL COMPLEMENTARY TYPE - FZT591A C at 1A FZT591A FZT491A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

FMMTA92

Abstract: BF620 BF621
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF621 ISSUE 3 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltage APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE – BF620 C E C

BSR33

Abstract: BSR43
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR33 ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – BR4 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO

BCX5316

Abstract: BCX5616
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5316 ISSUE 4 – MARCH 2001 C COMPLIMENTARY TYPE – BCX5616 PARTMARKING DETAIL – AL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO -100 V Collector-Emitter Voltage

bsp43

Abstract: BSP33
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSP33 ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSP43 PARTMARKING DETAIL – BSP33 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO -90

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SD1481

Abstract: DSA00108835
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip C-to-B Zener diode for surge voltage absorption

Contextual Info: MMPQ3725 MMPQ3725 E B E B E B E C SOIC-16 B C C C C C C C NPN Quad Transistor This device is designed for high current low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter

BF620

Abstract: BF621 FMMTA42
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 C E C PARTMARKING DETAIL –

BSP32

Abstract: BSP42 FMMT493
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BSP42 ✪ ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSP32 PARTMARKING DETAIL – BSP42 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 90 V Collector-Emitter Voltage

bcx5316

Abstract: BCX5616
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage