TRANSISTOR C 143 Search Results

marking code ER sot 143

Abstract: transistor D95 TRANSISTOR C
Contextual Info: BCV63 BCV63B SILICON PLANAR TRANSISTOR D ouble N-P-N transistor in a plastic SO T-143 package. Intended fo r S c h m itt trigger applications. P-N-P com p le m e nt is th e BCV64. Q UICK REFERENCE D A T A transistor C o lle c to r-e m itte r voltage open base

ansley idc ribbon connector

Abstract: augat plug adapter assembly socket 8723 transistor ansley ribbon connector 16 pin ansley female connector ansley cable flat flexible Augat 10 Pin round Socket transistor 8926 round female pin header 3-1437515-3
Contextual Info: Tyco/Augat PCB Connectors, Sockets, Plug Assemblies and Tooling Transistor Sockets 600 Series Ñ AG and CG Plug Adapter Assemblies c c c c c c c Polarization: Dot, Notch, Bump c Contact Plating: 30 µ" Gold per Mil-G-45204 The Augat Transistor sockets utilize hi-rel machined outer sleeves and gold plated inner contacts assembled into a low

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

234 8715

Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

HFA3046

Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

transistor 224-1 base collector emitter

Abstract: transistor 0588
Contextual Info: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector

HFA3046

Abstract: TYPE 85.54 542E02 542E-02
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays March 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

bfr106

Contextual Info: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23

Transistor TT 2144

Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).

bcv64 SOT143

Contextual Info: BCV64 BCV64B SILICON PLANAR TRANSISTOR Double P-N-P tran sisto r in a plastic SOT-143 package. Intended fo r S ch m itt-trig g e r applications. N-P-N com p le m e nt is the BCV63. Q U IC K R E F E R E N C E D A T A transistor T2 T1 C o lle c to r-e m itte r voltage open base

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: 1415-2 2 Watts, 20 Volts, Class C Microwave 1430 - 1540 MHz GENERAL DESCRIPTION The 1415-2 is an internally matched, COMMON BASE transistor capable of providing 2 watts of CW RF Output power across the 1430-1540 MHz band. This transistor is specifically designed for telemetry and telecommunications

transistor fp 1016

Abstract: Lc 0427 17-25 sot89 BFQ18A Philips FA 291
Contextual Info: bbS3'i31 0025050 STM P h ilip s S e m ic o n d u c to rs IAPX P ro d u c t s p e c ific a tio n NPN 4 GHz wideband transistor BFQ18A N AMER PHI LIP S/DISCRETE DESCRIPTION b?E D PINNING NPN transistor in a plastic SOT89 envelope intended for application in

BFG96

Abstract: V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers
Contextual Info: PhjUj^^emiconductori bbS3T31 Q031HTH 5 53 M l A P X ^ ^ ^ ^ ^ ^ ro d u c ^ p e c ific a tio n NPN 5 GHz wideband transistor £ BFG96 N AMER PHILIPS/DISCRETE DESCRIPTION b'lE I PINNING NPN transistor in a 4-lead dual-emitter plastic SO T103 envelope. DESCRIPTION

TRANSISTOR C 557 B

Abstract: BFT25 transistor 1548 b
Contextual Info: bbS3T31 Philips Sem iconductors Q0E?53bD bTS ^BAPX - N AUER P H I L I P S / D I S C R E T E Product specification b?E ]> NPN 2 GHz wideband transistor DESCRIPTION c BFT25 PINNING NPN transistor in a plastic SO T23 envelope. PIN It Is primarily intended for use in RF

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BCV63

Abstract: BCV64 small signal transistor SCHMITT-TRIGGER application BCV64A 700 v power transistor
Contextual Info: ^53^31 D E V E L O P M E N T D ATA DOlSbll 5 BCV64 T h is d a ta sheet c o n ta in s advance in fo rm a tio n a n d sp e c ific a tio n s are su b ject to c hange w it h o u t notice. N AMER PH IL IP S/ DISCR ETE ObE D SILICO N PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications.

bfr 547

Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
Contextual Info: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise

Contextual Info: 1415-7 7 Watts, 20 Volts, Class C Microwave 1430 - 1540 MHz CASE OUTLINE 55LV, STYLE 1 GENERAL DESCRIPTION The 1415-7 is an internally matched, COMMON BASE transistor capable of providing 7 watts of CW RF Output power across the 1430-1540 MHz band. This transistor is specifically designed for telemetry and telecommunications

lt 715 1111

Abstract: st zo 607
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEA TU R E • P A C K A G E DIMENSIONS in mm High gain, low noise • Small reverse transfer capacitance • C an operate at low voltage ¥ A B S O LU TE MAXIMUM RATINGS (Ta = 25 °C)

Contextual Info: SILICO N TR A N SISTO R 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise in m illim eter* amplifier at V H F, U H F and C A T V band.