234 8715
Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
234 8715
Ic 9430
HFA3046
HFA3046B
HFA3096
HFA3096B
HFA3127B
HFA3128B
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HFA3046
Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
NPN Monolithic Transistor Pair
HFA3046B
HFA3046Y
HFA3096
HFA3096B
HFA3096Y
HFA3127B
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transistor 224-1 base collector emitter
Abstract: transistor 0588
Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector
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NE461M02
OT-89
NE461M02
24-Hour
transistor 224-1 base collector emitter
transistor 0588
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HFA3046
Abstract: TYPE 85.54 542E02 542E-02
Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays March 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
TYPE 85.54
542E02
542E-02
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V 7271 U
Abstract: 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E
Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on
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HFA3102
10GHz
HFA3102
10GHz)
V 7271 U
421506
4948 transistor bf
IC 7555 datasheet
7555 harris
Dual Long-Tailed Pair Transistor Array
NE 7555
T 3108 001
TOP 100-124
500E
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4948 transistor bf
Abstract: 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102 HFA3102B HFA3102B96
Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1996 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on
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HFA3102
10GHz
HFA3102
10GHz)
4948 transistor bf
7555 harris
NE 7555
p 8123 transistor
V 7271 U
500E
800E
HFA3102B
HFA3102B96
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285-1 MAG IC
Abstract: C 2851 transistor c 3198 transistor 1348 transistor Transistor 168 TRANSISTOR C 2570 IC 4073 B15V18008 c 2570 transistor
Text: BIPOLARICS, INC. Part Number B15V18008 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V18008 is a high performance silicon bipolar transistor intended for power linear and Class C applications
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B15V18008
B15V18008
285-1 MAG IC
C 2851 transistor
c 3198 transistor
1348 transistor
Transistor 168
TRANSISTOR C 2570
IC 4073
c 2570 transistor
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Harris HFA3101 5 GHz Gilbert cell array
Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI
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HFA3101
10GHz
HFA3101
10GHz)
Harris HFA3101 5 GHz Gilbert cell array
Array chip resistors
fiber optic FM Modulator
FM Modulator 2GHz
500E
800E
H3101B
reactance modulator
HFA3101B96
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sot223 device Marking
Abstract: No abstract text available
Text: CZT7090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE SAT PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7090LE is an Enhanced Specification Low VCE(SAT) PNP Silicon Power Transistor packaged in an industry standard
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CZT7090LE
CZT7090LE
OT-223
CZT3090LE
sot223 device Marking
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Untitled
Abstract: No abstract text available
Text: CZT7090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE SAT PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7090LE is an Enhanced Specification Low VCE(SAT) PNP Silicon Power Transistor packaged in an industry standard
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CZT7090LE
CZT7090LE
OT-223
CZT3090LE
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kf 8715
Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI
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HFA3101
10GHz
HFA3101
10GHz)
390nH
825MHz
900MHz
75MHz
76MHz
kf 8715
fiber optic FM Modulator
gilbert cell sum
RF TRANSISTOR 10GHZ
FM Modulator 2GHz
rf digital modulators ic
50E08
stub tuner matching
500E
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TRANSISTOR zo 109 ma
Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C
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B15V140
B15V140
OT-223
OT-103
TRANSISTOR zo 109 ma
transistor zo 109
transistor 86
IC 7585
midium power uhf transistor
microwave transistor
ZO 109 transistor
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2SC4867
Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in
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ENN6117
FH201
2SC4871)
2SC4867)
FH20I
2SC4871
2SC4867,
FH201]
7117D7L
0D544b7
2SC4867
16T MARKING
FH201
ZS21
TA-1315
1hz OUTPUT
7CJE
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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Untitled
Abstract: No abstract text available
Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • Low C ollector Em itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic VcBO Sym bol 50 V C ollector Em itter Voltage
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KSC3076
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Transistor TT 2144
Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
Transistor TT 2144
Sii 9573
2907 pnp transistor
NPN/Transistor TT 2144
Sii 9024
22E09
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Untitled
Abstract: No abstract text available
Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSA 1241 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol 50 V C ollecto r E m itter Voltage
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KSC3076
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PDF
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Untitled
Abstract: No abstract text available
Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W
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3403ES7
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Untitled
Abstract: No abstract text available
Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol j C o lle cto r Base Voltage C o lle cto r E m itter Voltage Vceo
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KSC3076
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PDF
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2Sc2525
Abstract: 2SC2526
Text: January 1990 Edition 1.1 — - FUJITSU PRODUCT PROFILE 2SC2525, 2SC2526 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon N P N general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor { R E T te c h
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2SC2525,
2SC2526
2SC2526
2Sc2525
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon
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QCA200A40/60
400/600V
QCA200A
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BFG96
Abstract: V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers
Text: PhjUj^^emiconductori bbS3T31 Q031HTH 5 53 M l A P X ^ ^ ^ ^ ^ ^ ro d u c ^ p e c ific a tio n NPN 5 GHz wideband transistor £ BFG96 N AMER PHILIPS/DISCRETE DESCRIPTION b'lE I PINNING NPN transistor in a 4-lead dual-emitter plastic SO T103 envelope. DESCRIPTION
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0031H1H
BFG96
OT103
BFG32.
OT103.
BFG96
V 904 RL 805
bfg96 scattering
NPN transistor 2527
Transistor D 1881
transistor ITT 108
PHHI
BFG32
philips MATV amplifiers
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d 2539 transistor
Abstract: QCA50AA120
Text: TRANSISTOR MODULE QCA50ÄA120 UL;E76102 M Q C A 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated
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QCA5QAA120
QCA50AA1
E76102
d 2539 transistor
QCA50AA120
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200AA100 UL;E76102 M Q C A 2 0 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA200AA100
E76102
QDQ2Q12
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