TRANSISTOR C 102 Search Results

PH1012

Contextual Info: y H fe C O H Coming Attractions M a r t A M P com pany Avionics Pulsed Power Transistor, 70W, TACAN Format 1025-1150 MHz PH1012-70 V1.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor C om m on Base C onfiguration Broadband Class C O peration

ansley idc ribbon connector

Abstract: augat plug adapter assembly socket 8723 transistor ansley ribbon connector 16 pin ansley female connector ansley cable flat flexible Augat 10 Pin round Socket transistor 8926 round female pin header 3-1437515-3
Contextual Info: Tyco/Augat PCB Connectors, Sockets, Plug Assemblies and Tooling Transistor Sockets 600 Series Ñ AG and CG Plug Adapter Assemblies c c c c c c c Polarization: Dot, Notch, Bump c Contact Plating: 30 µ" Gold per Mil-G-45204 The Augat Transistor sockets utilize hi-rel machined outer sleeves and gold plated inner contacts assembled into a low

AVF100

Abstract: ASI10569
Contextual Info: AVF100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVF100 is a high power Class-C transistor designed for IFF/DME/TACAN Applications in 1025-1150 MHz. A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • 50 V operation

MSC1090M

Abstract: 1402 Transistor transistor k 790
Contextual Info: MSC1090M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B A .100 X 45° The ASI MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. ØD 1 3 C B .088 x 45° CHAMFER 4 2 E F FEATURES:

2T marking

Contextual Info: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case

2gm marking

Abstract: TRANSISTOR marking code vishay
Contextual Info: MMBTA56 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBTA06 is recommended. • This transistor is also available in the TO-92 case

MMBT3906 vishay

Contextual Info: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

234 8715

Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

HFA3046

Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

transistor 224-1 base collector emitter

Abstract: transistor 0588
Contextual Info: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector

HFA3046

Abstract: TYPE 85.54 542E02 542E-02
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays March 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

Contextual Info: J U fa i Coming Attractions M a n A M P ci o m p a n y Avionics Puised Power Transistor, 282W, TACAN Format 1025 -1150 MHz PH1012-282 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base C onfiguration B roadband Class C O peration

NTE74HC393

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74376 16-Lead DIP, See Diag. 249 Quadruple J-K Flip-Flop CURH J3 v c c ij 3 B 4J 04K 1KH 1Q Q 0 40 2Q Q g 2KH 2J Q GND Q B NTE74S387 16-Lead Dl P, See Diag. 249 1024-Bit (256 x 4) Open Collector PROM,

*2F MARKING

Contextual Info: MMBT2907A VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A.

MGP420

Abstract: BFQ42 transistor M 839 mgp41 MGP424 BLW29 MSB056
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW29 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters

BLW80

Abstract: transistor rf m 1104
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the

UHF TRANSISTOR

Abstract: transistor rf m 1104 BLW90
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the

BLW81

Abstract: transistor rf m 1104
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the

AVD035P

Abstract: TACAN TACAN 41 ASI10559
Contextual Info: AVD035P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI AVD035P is a medium power Class C transistor for pulsed LBand avionics, DME/TACAN Applications. A C .100x45° C B FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1150 MHz

transistor s11 s12 s21 s22

Abstract: NE856M02-T1-AZ NE856M02
Contextual Info: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor

BLW87

Abstract: SOT-123
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW87 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and

E67349

Abstract: TLP630
Contextual Info: TO SH IBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm A C/D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode

Transistor TT 2144

Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).