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    TRANSISTOR BUZ45 Search Results

    TRANSISTOR BUZ45 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUZ45 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45A CASE OUTLINE: TO-204AA (TO-3) ENHANCEMENT MODE HIGH VOLTAGE FIELD EFFECT TRANSISTOR


    Original     		O-204AA BUZ45A PDF

    BUZ45

    Abstract: No abstract text available
    Text: , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ45 N-Channel Enhancement-Mode Power Field-Effect Transistors GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    Original     		BUZ45 BUZ45 PDF

    BUZ45

    Abstract: TA17435 transistor BUZ45 Nanosecond N channel MOS FET fet mark fet data fet data book free download harris high power diode 500v
    Text: BUZ45 Semiconductor Data Sheet 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2257.1 Features • 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • rDS ON = 0.600Ω (BUZ45) power field effect transistor designed for applications such


    Original     		BUZ45 BUZ45) TA17435 TA17435. O-204AA O204AA) 1-800-4-HARRIS BUZ45 transistor BUZ45 Nanosecond N channel MOS FET fet mark fet data fet data book free download harris high power diode 500v PDF

    BUZ45B

    Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
    Text: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as


    Original     		BUZ45B BUZ45 TA17435. BUZ45B TA17435 BUZ-45B transistor BUZ45 500V N-Channel MOSFET ID 29A PDF

    TA17425

    Abstract: power relay N-channel mosfet BUZ45 transistor BUZ45 TRANSISTOR to 204aa BUZ45A 22581 500V RELAY high power diode 500v TO-204AA transistor
    Text: BUZ45A Semiconductor Data Sheet 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2258.1 Features • 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.800Ω (BUZ45 field effect transistor designed for applications such as


    Original     		BUZ45A BUZ45 TA17425. O-204AA O204AA) 1-800-4-HARRIS TA17425 power relay N-channel mosfet transistor BUZ45 TRANSISTOR to 204aa BUZ45A 22581 500V RELAY high power diode 500v TO-204AA transistor PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    f5j transistor

    Abstract: TRANSISTOR BO 346 TRANSISTOR f5j BUZ45A TRANSISTOR BO 345 v103 4j TRANSISTOR BO 344 diode sy 345 Hc 346 s TRANSISTOR V103 transistor
    Text: N AMER PHILIPS/DÎSCRETE i BUZ45A PowerMOS transistor ObE D ^53=131 OGlMbSM 7 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,


    OCR Scan     		BUZ45A b5313] T-39-13 f5j transistor TRANSISTOR BO 346 TRANSISTOR f5j BUZ45A TRANSISTOR BO 345 v103 4j TRANSISTOR BO 344 diode sy 345 Hc 346 s TRANSISTOR V103 transistor PDF

    BUZ45

    Abstract: transistor BUZ45 t03 package transistor pin dimensions IEC134 MC 140 transistor
    Text: PowerMOS transistor ^ OLE D N AMER PHI LIP S/DISCRET E BUZ45 53=131 o a m t .47 T i3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ45 D01Hfc 801us. T-39-13 BUZ45 transistor BUZ45 t03 package transistor pin dimensions IEC134 MC 140 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER P H I L I P S / D I S CR E T E OtE D PowerMOS transistor • ~ bbSBTBl QQ14ttl 4 ■ BUZ45B r-39-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		QQ14ttl BUZ45B r-39-i3 T-39-13 0014bbb T-39- BUZ45B_ PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.


    OCR Scan     		BUZ45A_ bb53T31 0014bS7 T-39-13 T-39-13 D014bST BUZ45A PDF

    nh348

    Abstract: BUZ45B D-19 V103 SD 347 transistor
    Text: N AMER P H I L I PS / D IS CR E TE ObE PowerMOS transistor D • “ bbSBTBl OOmbtl 4 ■ BÜZ45B ' r - 3<?-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		BUZ45B bbS3T31 Q014bb7 T-39-13 nh348 BUZ45B D-19 V103 SD 347 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ45B S em iconductor Data Sheet October 1998 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		BUZ45B TA17435. PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ45A 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 0 4 A A • 8.3A, 500V B O T T O M VIEW • rDS on = ° - 8 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		BUZ45A BUZ45A PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302571 0 D 5 3 fl3 t> Qfl3 ■ HAS BUZ45A 23 HARRIS N-Channel Enhancem ent-Mode Power Field-Effect Transistor August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 8.3A, 500V • rDS on = o .an • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds


    OCR Scan     		BUZ45A BUZ45A PDF

    buz45

    Abstract: No abstract text available
    Text: / = T SGS-THOMSON *7# R iflö fg [^ S I[L I in M )iD (g i BUZ45 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ45 500 V R DS(on) 0.6 fi *D 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SW ITCHING FOR OPERATION AT < 100KHz


    OCR Scan     		BUZ45 100KHz 00A//iS buz45 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4302271 0053332 4 3Ö • HAS BUZ45 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1 9 9 1 Package Features TO-204AA BOTTOM VIEW • 9.6A, 50 0V • rDS on = °-6 n _ SOURCE • S O A is P o w e r- D is s ip a tio n Lim ited


    OCR Scan     		BUZ45 O-204AA PDF

    Untitled

    Abstract: No abstract text available
    Text: rZ7 SGS-THOMSON ^ 7 # , SMi]0 » llLI(gir»R!lö(gi BUZ45A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ45A 500 V 0.8 n 8.3 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT < 100KHz • EASY DRIVE - FOR REDUCED COST AND


    OCR Scan     		BUZ45A 100KHz PDF

    buz45

    Abstract: No abstract text available
    Text: PowerMOS transistor_BUZ45 N AMER PHILIPS/DISCRETE QbE J> M tbS3T31 0014b47 T • _ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		BUZ45 tbS3T31 0014b47 BUZ45_ bb53T31 0014bSl T-39-13 bbS3T31 buz45 PDF

    BUZ-45B

    Abstract: No abstract text available
    Text: BUZ45B [g HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 F e a tu re s P ackage TO-204AA i aUaA , O en mr • 1 UUV m • r D S o n = BOTTOM VIEW 0 .5 0 SOURCE • SOA is P o w er-D issip atio n Lim ited • N anosecond S w itching S peeds


    OCR Scan     		BUZ45B O-204AA BUZ45B BUZ-45B PDF

    buz45

    Abstract: No abstract text available
    Text: • _7'12ïï B 3 7 _ G O S ^ G S ■ ^ 3 ^ - 1 3 r = 7 S G S -T H O M S O N ,y i g ra !D (g § * 7Æ, o B U Z 45 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR S G S-THOMSON 3GE TYPE V DSS ^D S(on •d BUZ45 500 V 0.6 Q 9.6 A


    OCR Scan     		BUZ45 10OKHz buz45 PDF

    BUZ45A

    Abstract: No abstract text available
    Text: / = T SG S -TH O M S O N * 7 M m M § [ R I G J Ï Ï O M O BUZ45A ( g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss BUZ45A 500 V ^DS(on 0.8 fi •d 8.3 A • HIGH V O LT A G E - FO R OFF-LINE S M P S • U LT R A FAST SW ITCHING FO R O PERATIO N


    OCR Scan     		BUZ45A BUZ45A 10OKHz SC-06M PDF

    BUZ45

    Abstract: IC LA 4127 la 4127
    Text: BUZ45 33 HARRIS N-Channel Enhancem ent-M ode Power Fìeld-E ffect Transistor August 1991 Features Package T0-204AA BOTTOM VIEW • 9 .6A , 5 0 0 V • rDS on = 0 -6 fl SOURCE • S O A is P o w e r-D is sip a tio n Lim ited _ . DRAIN /(FLA N G E) • N a n o s e c o n d S w itch in g S p e e d s


    OCR Scan     		BUZ45 T0-204AA BUZ45 IC LA 4127 la 4127 PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF