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    TRANSISTOR BUZ20 Search Results

    TRANSISTOR BUZ20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUZ20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor BUZ20

    Abstract: buz20s TA17411 mos n fet e 75w BUZ20 TB334
    Text: BUZ20 Semiconductor Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET October 1998 File Number 2254.1 Features • 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.200Ω (BUZ20 field effect transistor designed for applications such as


    Original     		BUZ20 BUZ20 TA17411. transistor BUZ20 buz20s TA17411 mos n fet e 75w TB334 PDF

    buz41

    Abstract: TA17415 BUZ20 BUZ41A TB334
    Text: BUZ41A Semiconductor Data Sheet 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2256.1 Features • 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.500Ω (BUZ41 field effect transistor designed for applications such as


    Original     		BUZ41A BUZ41 TA17415. TA17415 BUZ20 BUZ41A TB334 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ20 Semiconductor October 1998 Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		BUZ20 TA17411. PDF

    A25473S

    Abstract: No abstract text available
    Text: SILXCONIX INC IfiE D UlSSKSs • A25473S DD14ST3 & ■ BUZ20_ T-3R -H N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW PRODUCT SUMMARY V BRjDSS rw 100 0.20 O b (A 12 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE 12 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		A25473S DD14ST3 BUZ20_ O-220AB BUZ20 T-39-11 PDF

    transistor BUZ20

    Abstract: OC106 BUZ20 OC-106 toc106
    Text: P n w p r M O S tr a n s is to r N AMER PHILIPS/DISCRETE _ BUZ20_ ObE D • LbS3T31 ODlMMlb 5 May 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		RTIZ20_ LbS3T31 BUZ20_ 0D14MES T-39-11 transistor BUZ20 OC106 BUZ20 OC-106 toc106 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 5 3 7 OGESbbb fl • ' T ' - 3 C| - H SGS-THOMSON BUZ20 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G TYPE BUZ20 30E S-THOMSON VDss 100 V ^DS on 0.2 SI D Id 12 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE


    OCR Scan     		BUZ20 T10C/' PDF

    UZ20

    Abstract: transistor BUZ20 BUZ20
    Text: {£ H A J R R BUZ20 IS N -Channel Enhancem ent-M ode Power Field-E ffect Transistor August 1991 Package Features T 0 -2 2 0 A B • 12A, 100V TOP VIEW • rDS on) = ° - 2 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		BUZ20 BUZ20 92GS-44175 UZ20 transistor BUZ20 PDF

    transistor BUZ20

    Abstract: BUZ20
    Text: fZ T SGS-THOMSON HD g(^ (ilL(i(g'ir»M(gi B U Z20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ20 100 V 0.2 ß 12 A • 100 VOLTS - FOR UPS AP PLICATIO NS • ULTRA FAST SW ITCHING • RATED FOR UNCLAM PED INDUCTIVE SW ITCHING (ENERGY TEST) ♦


    OCR Scan     		BUZ20 00A//xS transistor BUZ20 BUZ20 PDF

    buz20

    Abstract: BUZ-20
    Text: S G S -T H O M S O N « o a s i BUZ20 * ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on *D BUZ20 100 V 0.2 n 12 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦


    OCR Scan     		BUZ20 O-220 00A//tS buz20 BUZ-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ41A Semiconductor Data Sheet October 1998 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		BUZ41A TA17415. PDF

    BUZ20

    Abstract: No abstract text available
    Text: PnwprM OS transistor_ B IIZ 2 0 _ N AMER PHILIPS/DISCRETE ObE D • bb53T31 001441b 5 ■ T-31-n ' GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		bb53T31 001441b T-31-n BUZ20_ BUZ20 T-39-11 BUZ20 PDF

    BUZ20

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics


    OCR Scan     		MOSFETs-BUZ20 O-220AB 92GS-441 BUZ20 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


    OCR Scan     		23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A PDF

    2N6796 HARRIS

    Abstract: No abstract text available
    Text: HARRIS SENICOND SECTOR ff» H A R R U M S EMI CONDUCTOR kflE D • M3Q2271 0051104 312 ■ PCF130W PCF130D I S N-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		M3Q2271 PCF130W PCF130D Mil-Std-750, IRF530 BUZ20 IRF130 2N6756 IRFF130 2N6796 2N6796 HARRIS PDF

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF